4K X 1 DRAM Search Results

Contextual Info: L4B7SE5 □ Q 4f l cì 7 3 M5T NECE NEC 16M DRAMs cont ORGANIZATION FEATURES PACKAGE 2M x 8 Fast-page access, 4K refresh, self-refresh 2M x 8 2M x 8 2M x 8 1 M x 16 1 M x 16 1 M x 16 1M x 16 Fast-page access, 4K refresh, self-refresh Hyper-page access, 4K refresh

Contextual Info: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M x 4 components 8-Mword x 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M x 16 & 4 pcs of 4M x 4 components)

CAPACITOR 64 680 4J

Abstract: 11DQ12 8dq9 Nippon capacitors
Contextual Info: HB56EW472ETC-A Series, HB56EW872ETK-A Series 32/64MB Buffered EDO DRAM DIMM 4-Mword X 72-bit, 4k Refresh, 1 Bank Module 4 pcs of 4M X 16 & 2 pcs of 4M X 4 components 8-Mword X 72-bit, 4k Refresh, 2 Bank Module (8 pcs of 4M X 16 & 4 pcs of 4M x 4 components)

Contextual Info: 8K x 8 4K x 8 CMOS FourPort RAM MODULE PRELIMINARY IDT7MB1041 IDT7MB1042 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-density 64K /32K -bit C M O S FourPort RAM Modules • 8K x 8 ID T 7 M B 1 0 4 1 or 4K x 8 (ID T 7 M B 1 042) option

Contextual Info: HB56HW464ETNC-5/6, HB56HW864ETNK-5/6 32/64MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 4k Refresh, 1 Bank Module 8-Mword X 64-bit, 4k Refresh, 2 Bank Module 4/8 pcs of 4M X 16 components HITACHI ADE-203-901A (Z) Rev. 1.0 Apr. 14, 1998 Description The HB56HW464ETNC, HB56HW864ETNK belong to 8-byte DIMM (Dual in-line Memory Module)

Contextual Info: KMM366F203CK KMM366F213CK DRAM MODULE KMM366F203CK & KMM366F213CK EDO Mode without buffer 2M x 64 DRAM DIMM based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F20 1 3CK is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung

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Contextual Info: Part Number 64M DRAM 1 x 4 / x 8 /¿PD4264 4 00L E - A 70 NEC CMOS Dynamic RAM —^ 64M Dynamic RAM, Refresh Cycle — 6 4 : 8K Refresh 65 : 4K Refresh O :x 4 8 : x8 Fast Page M o d : TSOP (II)(400mil)

KMM366F213BK

Abstract: KM48V2104
Contextual Info: KMM366F203BK KMM366F213BK DRAM MODULE KMM366F203BK & KMM366F213BK EDO Mode without buffer 2M x 64 DRAM DIMM based on 2Mx8, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F20 1 3B is a 2M bit x 64 Dynamic RAM high density memory module. The Samsung

Contextual Info: UG216E3654HKG T 64M Bytes (16M x 36) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216E3654HKG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3654HKG(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAM in 400mil Package and 4 pcs of 16M x 1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 16 Advance Information MCM516165BV 16M CMOS Wide DRAM Family EDO,1M x 1 6 ,1K, and 4K Refresh The family of 16M Dynamic RAMs is fabricated using 0.50n CMOS high-speed silicon-gate process technology. It includes devices organized as 1,048,576

Contextual Info: UG216C3654HKG T 64M Bytes (16M x 36) DRAM 72Pin SIMM based on 16M X 4 General Description Features The UG216C3654HKG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3654HKG(T) is assembled using 8 pcs of 16Mx4 4K refresh DRAMs in 400mil Package and 4 pcs of 16M x 1 DRAMs in

Contextual Info: UG216E3661GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3661GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3661GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package mounted on 72 Pin

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Contextual Info: UG216E3261GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3261GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3261GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Packages mounted on 72 Pin

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Contextual Info: UG216E3211GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3211GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3211GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

Contextual Info: UG216C3611GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3611GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3611GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAM in SOJ Package and 2 pcs of ABT16

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Abstract: ras 510 UG216C3261GJG 45388
Contextual Info: UG216C3261GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3261GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3261GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Packages mounted on 72 Pin

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Abstract: we 510 UG216C3211GJG
Contextual Info: UG216C3211GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3211GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3211GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

Contextual Info: UG216E3611GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3611GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3611GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

UG216C3221GJG

Contextual Info: UG216C3221GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3221GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216C3221GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

Contextual Info: UG216E3621GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3621GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216E3621GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

Contextual Info: UG216C3661GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3661GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3661GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package mounted on 72 Pin

Contextual Info: UG216E3221GJG T 64M Bytes (16M x 32 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216E3221GJG(T) is a 16,777,216 bits by 32 SIMM module.The UG216E3221GJG(T) is assembled using 32 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

Contextual Info: UG216C3621GJG T 64M Bytes (16M x 36 ) DRAM 72Pin SIMM based on 16M X 1 General Description Features The UG216C3621GJG(T) is a 16,777,216 bits by 36 SIMM module.The UG216C3621GJG(T) is assembled using 36 pcs of 16Mx1 4K refresh DRAMs in SOJ Package and 2 pcs of ABT16

Contextual Info: ESM T F59L1G81A Flash 1 Gbit 128M x 8 3.3V NAND Flash Memory FEATURES Voltage Supply: 2.6V ~ 3.6V Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) bytes - Block Erase: (128K + 4K) bytes