4FLS545E Search Results

Contextual Info: PD - 9.1347A International lö R Rectifier IRLZ44NS PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Surface Mount Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

Contextual Info: 4855452 IN TERN ATIO N AL R E C T I F I E R _ 73C 0 7 1 5 9 I O R in t e r n a t io n a l RECTIFIER ~73 DE 1 4 fl 55 4 S2 Dj T ~ û h 2-3 Data sneet No. PD-z. ¡30 □□G71Scî 2 | R18C, R18S, R18CR & R18SR SERIES 600 - 400 VOLTS RANGE 200 AMP AVG STUD MOUNTED

Contextual Info: INTERNATIONAL RECTIFIER ?i DE | 4Ö55455 ODDbST? 0 | T ~ 2 .5 - / ? Data Sheet No. PD-3.079B IN T E R N A T IO N A L R E C T IF IE R 35QPJT SERIES 1SO O A I T G Ql G a t e T u r n - O f f H ockey P u k S C R s D escription/Features M ajor Ratings 350PJT 1200

1N1183

Abstract: 1N1186RA 1N1184 1N1183A 1N1184A 1N2128A 1N3765 IN118 TQ140 INI183
Contextual Info: SS DE I 4fl55452 4855452 00Em40 T |~~ 5 5C INTER N A T I O N A L R E C T I F I E R D 04940 Data Sheet No. PD-2.087 r - t f / - IN TER N A TIO N A L R E C T IF IE R T 'I IÖR 1N1183, 1N3765, 1M11S3A, 1NS1S8A SERIES 35, 4 0 and 6 0 Amp Power Silicon Rectifier Diodes

Contextual Info: I pij-0 m o t io n a l Provisional Data Sheet No. PD-9.335E IOR Rectifier JANTX2N6760 HEXFET POWER MOSFET JANTXV2N6760 [REF:MIL-PRF-19500/542] [GENERIC:IRF330] N- C H A N N E L 400 Volt, 1.000 HEXFET Product Summar1 Part Number H EXFET technology is the key to International Rectifier’s

IREP450

Abstract: irfp450 FP450 DIODE C549 IRFP451 IRFP452 diode c552 C546 A FP453 diode C546
Contextual Info: HE D I 4Û55M5E 00007113 »4 | Data Sheet No. PD-9.458B INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED* HEXFETTRANSISTORS IM - C H A N N E L I « R IRFP45Q IRFP451 IRFP452 IRFP453 Product Summary 500 Volt, 0.40 Ohm HEXFET

international rectifier GTO

Abstract: 350PJT160 gto 2400 capacitor 350PJT FULL WAVE RECTIFIER CIRCUITS with scr ge scr 1100v SCR 200A 500V 350PJT100 350PJT120 350PJT140
Contextual Info: 7Ì INTERNATIONAL RECTIFIER dF | 4 ö 55455 ODDbST? 0 ' T ~ Data Sheet No. PD-3.079B INTERNATIONAL RECTIFIER 35DPJT SERIES 1SOOA It g Q Gate Turn-Off Hockey Puk S C R s D escription/Features M ajor Ratings 3 5 0P JT 1200 Units A 'T (R M S 550 A >T(AV)

IRF7333

Contextual Info: P D - 9.1700 International l R Rectifier IRF7333 PRELIMINARY HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance Dual N Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated N -C H A N N E L FET1 FET 2

Contextual Info: PD - 9.1657A International I R Rectifier IRG4 PC50W PRELIMINARY INSULATED GATE BIPOLARTRANSISTOR Features • Designed expressly for Switch-Mode Power V qes — 6 0 0 V Supply and P F C pow er factor correction applications • Industry-benchmark switching losses improve

Contextual Info: PD - 9 .1 4 5 2D International I R Rectifier IRG4BC30U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optim ized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter