4FCI750 Search Results

Contextual Info: HYUNDAI H Y 5 3 10 0 0 A SEMICONDUCTOR 1M X S e rie s 1-bit CMOS DRAM DESCRIPTION The HY531000A is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating

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Contextual Info: • HYUNDAI HY29F800 Series 1M x 8-bit / 512K x 16-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES • 5.0 V 1 10% Read, Program, and Erase - Minimizes syslem-level power requirements • Compatible with JEDEC-Standard Commands - Uses software commands, pinouts, and

Contextual Info: HYUNDAI HYM532100 Series SEMICONDUCTOR 1M x 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532100 is a 1M x 32-bit Fast page mode CMOS DRAM module consisting of eight HY514400 in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.2 2pF decoupling capacitor Is mounted for each DRAM.

Contextual Info: •HYUNDAI SEMICONDUCTOR HYM594000A Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000A is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY5114100A In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^<F decoupling capacitor Is mounted for each DRAM.

Contextual Info: - H Y U N D A I H Y M 5 3 6 2 A M - S e r i e s 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ and eight HY531OOOA in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22nFdecoupling

Contextual Info: • H Y U N D A I H Y 5 1 4 4 1 O A S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-BIt DESCRIPTION The HY514410A is the 2nd generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. TVte HY514410A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced