4C256 Search Results

AS4C256K16F0-60JC

Abstract: ez 948 AS4C256K16F0 LRAL taa 723
Contextual Info: WÊ High Performance 256Kxl6 CMOS DRAM 4C256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY F E A TU R E S 512 refresh cycles, 8 ms refresh interval * Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh • High speed

as4c256k16eo

Abstract: 256KX16 AS4C256K16E0 LO301
Contextual Info: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • Extended data out • 512 refresh cycles, 8 ms refresh interval • Organization: 26 2 ,1 4 4 words X 16 bits • High speed

48C24

Abstract: f4737 bfe 9ca 3C44C 34h737 S42B BA3442
Contextual Info: 123456 12345267621842897A5BC9DDB5 7EF37B3B57D91DB57217FDA627CB135B67 7898ABCDD9A EDFD8A 7D9F D89D 123 4 56789A 4 BC4 D3ECFC4E3454 6E3 4 7F3CCF4 3BE 4 FEC34 33FEBC 4 123 4 5678 9A4BC43CBE34F4F34 E3 4 C3324

AS4C256K16E0-45JC

Contextual Info: H ig h P e r fo r m a n c e 256K X 16 CM OS DRAM A S4C 256K 16E 0 A 2 5 6 K X 1 6 CM O S EDO DRAM Preliminary information Features • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s x 16 b its • E x te n d e d d a ta o u t • H ig h s p e e d • 5 1 2 r e f r e s h c y c le s , 8 m s r e f r e s h in te r v a l

Contextual Info: Il High Performance 256Kxl6 CMOS DRAM 4C256K16F0 High Speed 256Kxl6 CMOS DRAM Fast Page Mode PRELIMINARY I F E A TU R E S_ • 512 refresh cycles, 8 ms refresh interval • Organization: 262,144 words by 16 bits - RAS-only or CAS-before-RAS refresh

AS4C256K16E0-60JC

Abstract: as4c256k16eo 12 SQ 045 JF 256KX16 AS4C256K16E0
Contextual Info: H ig h P e r fo r m a n c e 256K X 16 CMOS DRAM gg A S4C 256K 16E 0 II H iah speed 2 5 6 K x l6 CMOS DRAM EDO Preliminary information Features • 5 1 2 r e f r e s h c y c le s, 8 m s r e f r e s h in te rv a l • O r g a n iz a tio n : 2 6 2 , 1 4 4 w o r d s X 16 b its

Ry110

Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
Contextual Info: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #

Contextual Info: Preliminary information • 5 1 2 re fre s h cycles, 8 m s re fre s h in terv al - RAS-only o r CAS-before-RAS refresh • R e a d -m o d ify -w rite • T T L -co m p atib le, th re e -s ta te I / O • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s x 16 b its

sem 2105 16 pin

Abstract: sem 2105 IC SEM 2105 S D 0344C 0344C
Contextual Info: H ig h Perform ance gg 256KX16 Il A S4C 256K 16F0 CM OS DRAM H ig h Speed 256Kxl 6 CMOS D R A M F a st Pape M ode Preliminary Features • Read-modify-write • TTL-compatible, three-state I/O • JEDEC standard packages • Organization: 262,144 w ords by 16 bits

G001S

Contextual Info: H igh Perform ance 256K.X 16 CMOS DRAM H 4C256K16F0 A Hiah Speed 2S6KX16 CMOS DRAM Fast pane mode Preliminary information Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s b y 16 b its • R e a d -m o d ify -w rite • H ig h sp e ed - 5 0 /6 0 ns RAS access tim e

AS4C256K16F0-60JC

Abstract: 1j30 AS4C256K16F0 AS4C256K16F0-60 1J3000
Contextual Info: H ig h P e rfo rm a n c e 256K.X 16 CMOS DRAM H A 4C256K 16F0 A H ia h Speed 2 5 6 K X 1 6 CMOS DRAM F a st p a g e m ode Prelim inary information features • R e a d -m o d ify -w rite • T T L -co m p atib le, th re e -s ta te I/O • JEDEC sta n d a rd packages