4BIT MICROPROCESSOR Search Results

KM44C1000D

Abstract: KM44V1000D
Contextual Info: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), and

KM44C1000D

Abstract: KM44V1000D
Contextual Info: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), and

A9VC

Contextual Info: KM44C1004D, KM44V1004D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power),

KM44C1000P

Contextual Info: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4bit Fast Page Mode C M O S DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), and

Contextual Info: INTEGRATED CIRCUIT TOSHIBA 1. TECHNICAL VOICE SYNTHESIS LSI TC8805F DATA GENERAL TC8805F is PARCOR type voice synthesys 1-chip CMOS LSI with 4bit microprocessor. With a simple interface circuit key matrix, keyboard, LED and an audio circuit connected, the LSI

TMP47C432

Abstract: TC8802AF TC8802 FP80 TC8805F qfp80-p-1420 parcor R80-R83
Contextual Info: INTEGRATED CIRCUIT TO SHIBA 1. ° 1 (2) (3) (4) (5) (6) (7) TECHNICAL DATA VOICE SYNTHESIS LSI TC8805F GENERAL TC8805F is PARCOR type voice synthesys 1-chip CMOS LSI with 4bit microprocessor. With a simple interface circuit ( key matrix, keyboard, LED ) and an audio circuit connected, the LSI

KM44C4102

Contextual Info: CMOS DRAM KM44C4102 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: T ie Samsung KM44C4102 is a high speed CMOS 4 ,194,304x4 Dynamic Random Access Memory. Its Design is optimized for high performance applications

KM44C258

Abstract: KM44C1002BV
Contextual Info: KM44C1002B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

TC8802

Abstract: parcor TC8802AF
Contextual Info: Il 0024am ?tr «Tosa TC8805F-1 b4E m 1. TOS HI BA UC/UP G EN ER A L TC8805F is PARCOR type voice synthesys 1-chip CMOS LSI with 4bit microprocessor. W ith a simple interface circuit ( key m atrix, keyboard, LED ) and an audio circuit connected, the LSI is

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • T'ibmMS ÜÜ1S7E5 ST4 ■ KM44C1002B CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1002B is a CMOS high speed 1,048,576x4 Dynamic Random Access Memory, Its de­

EM6604

Abstract: RL01 RL23 EM Microelectronic Buzzer quartz
Contextual Info: EM6604 4 bit Microcontroller Figure 1 Architecture Features • Low Power - typical 2.7µA active mode - typical 0.3µA standby mode @ 1.5V, 32kHz, 25°C • Low Voltage - 1.2 to 1.7V • buzzer - 2kHz • ROM - 1536 x 16bit Mask Programmed • RAM - 72 × 4bit (User Read/Write)

ICT 20 PIN PLASTIC 300 MIL DIP

Contextual Info: KM44C1010B CMOS DRAM 1M X 4Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: I rac • • • • • • • • • • • tcAC tRC 110ns KM44C1010B-6 60ns 15ns KM44C1010B-7 70ns 20ns 130ns

EM6504

Abstract: EM6604 em microelectronic 34CPU EM MICROELECTRONIC - MARIN SA EM Microelectronic timer
Contextual Info: EM6604 4 bit Microcontroller Features Figure 1 Architecture • Low Power - typical 1.7µA active mode - typical 0.3µA standby mode @ 1.5V, 32kHz, 25°C • Low Voltage - 1.2 to 1.7V • buzzer - 2kHz • ROM - 1536 x 16bit Mask Programmed • RAM - 72 × 4bit (User Read/Write)

Contextual Info: KM44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its Design is optimized for high performance applications

Z8536AB1

Abstract: z853606 Z8536 Z8536B1V Z8536AB1V 24129 DIL40-PLA PDIP40 PLCC44 DIL40P
Contextual Info: wf v# S G S -T H O M S O N Z8536 CIO COUNTER/TIMER AND PARALLEL I/O UNIT • TW O INDEPENDENT 8-BIT, DOUBLE-BUFFE­ RED, BIDIRECTIONAL I/O PORTS PLUS A 4BIT SPECIAL-PURPOSE I/O PORTS. I/O PORTS FEATURE PROGRAMMABLE POLA­ RITY, PROGRAMM ABLE DIRECTION Bit

N37-38

Contextual Info: SG STHO M SO N Z8536 CIO COUNTER/TIMER AND PARALLEL I/O UNIT • TW O INDEPENDENT 8-BIT, DOUBLE-BUFFE­ RED, BIDIRECTIONAL I/O PORTS PLUS A 4BIT SPECIAL-PURPOSE I/O PORTS. I/O PORTS FEATURE PROGRAMMABLE POLA­ RITY, PROGRAMM ABLE DIRECTION Bit mode , "PULSE CATCHERS", AND PRO­

Contextual Info: KM44C1012B CMOS DRAM 1M x 4Bit CM O S Dynamic R A M with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its design is optimized for high performance applications

Contextual Info: S A MS UN G E L E C T R O N I C S INC b?E ]> Bi 7 c3 b m M 5 KM44C4102 001b2tia Tb2 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C4102 is a high speed CMOS 4 ,194,304x4 Dynamic Random Access Memory. Its

Contextual Info: KM44C1004D, KM44V1004D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 41 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power),

Contextual Info: KM44C1004D, KM44V1004D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 41bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power),

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 Q01S74S QÛ2 I KM44C1012B CMOS DRAM 1 M x 4Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1012B is a high speed CMOS 1 ,0 4 8 ,5 7 6 x 4 Dynamic Random Access Memory. Its

Contextual Info: KM44C1000D, KM44V1000D CMOS DRAM 1M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 41 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5V or +3.3V , access time (-5, -6 or -7), power consumption(Normal or Low power), a d

upc 566

Contextual Info: fZ 7 ^ 7 # S G S -T H O M S O N f IL1 O T M Û S Z8536 C IO C O U N TE R /TIM E R AND PARALLEL I/O UNIT • TW O INDEPENDENT 8-BIT, DOUBLE-BUFFE­ RED, BIDIRECTIO NAL I/O PORTS PLUS A 4BIT SPECIAL-PURPOSE I/O PORTS. I/O PORTS FEATURE PROGRAMMABLE POLA­ RITY, PROGRAMM ABLE DIRECTION Bit

QAC22

Abstract: ez 948 ic
Contextual Info: SAM S UN G E L E C T R O N I C S INC b?E D 7 T b 4 1 H E D O l b SS l VbT • SMûK ■ KM44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • The Samsung KM44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its