4BAB22B Search Results

IXTH10N60

Abstract: IXTM10N60
Contextual Info: CORP IflE D • 4bab22b □ IX Y S OOOObO'ï 7 ■ IXTH10N60, IXTM10N60 MAXIMUM RATINGS 10 AMPS, 600 V, 0.55Q/0.7S2 'T-201 -IS , Sym. Parameter Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) IXTH10N60 IXTM10N60 Unit 600 600 ±20 ±30 Vd0 Vdc

Contextual Info: r IXLN 50N120A IGBT VCES I C25 V CE sat = 1200 V = 80 A = 3.4 V High Short Circuit SOA Capability ?c G r 1 c m 1 mi ic u y u c u a È T ' e Maximum Ratings Symbol Test Conditions V CES Tj V CGR T, = 25°C to 150°C; RGE = 1 M ii V GES 1200 V 1200 V Continuous

50-08N

Abstract: 50-12N03 50-08N03 50-16N 50-18N03 50-18N vuo 50-08N03
Contextual Info: 4bñb22b DODICI OQl « I X Y □IXYS VUO 50 IdAV = 58 A VRRM = 800-1800 V Three Phase Rectifier Bridges V RSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type fet F ti "it VUO 50-08N03 VUO 50-12N03 VUO 50-14N03 VUO 50-16N03 VUO 50-18N03* I—► —

Contextual Info: nixYS Lo» IXSH/IXSM 45N100 IÛ B T VCES I = 1000 V = 75 A = 2.7 V C25 v CE sat Short Circuit SOA Capability Symbol Test Conditions v CES ^ = 25°C to 150°C 1000 V V CGR ^ = 25°C to 150°C; RGE = 1 Mi2 1000 V vy g e s Continuous +20 V VGEM T ransient ±30

Contextual Info: nixYS HiPerFAST IGBT IXGA 24N60A IXGH 24N60A = = = = CES ^C25 vv CE sat t 600 V 48 A 2.7 V 275 ns P relim inary data Symbol Test Conditions vCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 600 V vt g e s vGEM Continuous ±20 V Transient

Contextual Info: m MbfibEEb DODlfiBT 067 M I X Y □IX Y S U ” *>» VCES = 1200 V VII50-12S1 VCE sat =3.7V IGBT Modules High Short Circuit SO A Capability Maximum Ratings Symbol Test Conditions v CES Tj = 25 'C to 150'C 1200 V VC0R Tj = 25'C to 150’ C; RGE = 1 Mi2 1200