4AC13 Search Results

4AC13

Abstract: Hitachi DSA001650
Contextual Info: 4AC13 Silicon NPN Epitaxial Application Low frequency power amplifier Outline SP-10 3 2 5 4 ID 1 1 10 6 7 9 8 ID 1, 10 Emitter 2, 4, 6, 8 Base 3, 5, 7, 9 Collector ID ID 10 4AC13 Absolute Maximum Ratings for each device, Ta = 25°C Item Symbol Ratings Unit

Hitachi Case

Abstract: hitachi power amplifier
Contextual Info: 4AC13 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline SP-10 1 10 Emitter 2 4 6 8 Base 3 5 7 9 Collector 4AC13 Absolute Maximum Ratings for each device, Ta = 25°C Item Symbol Ratings Unit Collector to base voltage ^CBO 50

4AC13

Contextual Info: 4AC13 Unit: mm 26.5 ± 0.3 2.5 1 1.82 2.54 1 Pin No. 1 2 2 3 3 4 1.4 5 4 6 1.2 7 5 8 9 6 10.5 ± 0.5 10.0 ± 0.3 4.0 ± 0.2 1.5 ± 0.2 10 0.55 0.55 ± 0.1 10 7 8 9 10 ——————————————————————————————————

Contextual Info: 4AC13 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline 1 ,1 0 2, 4, 6, 8 E m itte r Base 3, 5, 7, 9 C o lle c to r 4AC 13 Absolute Maximum Ratings for each device, Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage

Contextual Info: 4AC13 Silicon NPN Epitaxial HITACHI Application Low frequency power amplifier Outline SP-10 1 ,1 0 2, 4, 6, 8 3, 5, 7, 9 Emitter Base C ollector 4AC13 Absolute Maximum Ratings for each device, Ta = 25 °C Item Sym bol Ratings Unit Collector to base voltage

Contextual Info: HITACHI 4 A C 1 3 -Silicon NPN Epitaxial Low Frequency Power Amplifier Absolute M axim um Ratings for each dev ice, Ta = 25 °C Item Symbol Rating Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Item Symbol Rating Unit

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k