4A 250V AC Search Results

1E14

Abstract: 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE
Contextual Info: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 97 /Subject (4A, 250V, 0.610 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.610

Rad Hard in Fairchild for MOSFET

Abstract: mosfet 250V 4A 1E14 2E12 FRL234R4 JANSR2N7278 MOSFET A3
Contextual Info: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 78 /Subject (4A, 250V, 0.700 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.700

Contextual Info: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: ES M A « FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A ,250V ,rDS ON = 0.610n The Discrete Products Operation of Harris Semiconductor has developed a series o1 Radiation Hardened MOSFETs

Contextual Info: JANSR2N7397 SS MAR Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.61 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

IRSM836-044MA

Contextual Info: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high

1E14

Abstract: 2E12 FRL234D FRL234H FRL234R
Contextual Info: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high

N-channel enhancement 200V 60A

Abstract: TC 9310 IC DATA SHEET 1E14 2E12 FRL234D FRL234H FRL234R
Contextual Info: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

IRMCS1471

Abstract: JS-001-2012 2C diode IRMCK171
Contextual Info: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high

Contextual Info: FRL234D, FRL234R, FRL234H 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 4A, 250V, RDS on = 0.700Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

PQFN footprint

Contextual Info: IRSM836-044MA 4A, 250V Integrated Power Module for Small Appliance Motor Drive Applications Description IRSM836-044MA is a 4A, 250V Integrated Power Module IPM designed for advanced appliance motor drive applications such as energy efficient fans and pumps. IR's technology offers an extremely compact, high

Contextual Info: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A, 250V, ros ON = 0-610£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: 33 JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET Features Description • 4A, 250V, rDS ON = 0.700Q The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings

1E14

Abstract: 2E12 FRL234R4 JANSR2N7278
Contextual Info: JANSR2N7278 Formerly FRL234R4 4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.700Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from

1E14

Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
Contextual Info: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL234R4 JANSR2N7397
Contextual Info: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
Contextual Info: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Fuse 250V 4A

Abstract: OMF 125 4A 4A 250V SURFACE MOUNT FUSE omf 63 34030017 2013x
Contextual Info: OMF/OMK 250V Quick-acting Surface Mount Fuse and Fuseholder IEC 127-4/2; EN 60127-4/2 UL 248-14 formerly 198G CSA C22.2 No. 248.14 (formerly 59.2M) Approvals: UL recognition CSA certification VDE registration 250mA-4A File #E41599 250mA-4A File #LR51172

JS-TK-6657HR1S-08

Contextual Info: 1 2 3 4 5 6 7 8 9 A A SPECIFICATIONS Material: Rating: B Nylon UL94V-2, Natural UL 250V 5A, AC/DC CSA 250V 4A, AC/DC TUV 250V 7A AC/DC B C C D D E E Series JS-TK Pluggable Connector F Type 6657HR1S PCI Wiremount Connector Positions 08 08=8 Positions RoHS compliant

switch AU 101

Abstract: digitast
Contextual Info: TO K O SW ITCHES A vailable only in Japan Switch applications (Available only in Japan) Class 76 X-f 7 Application Type Audio equip. Comment Video equip. DC b- For power switches NE18-2U NE18-2a Push AC 250V 6A MSA AC 250V 4A For key board switches MD Disc

std4ns25

Contextual Info: STD4NS25 N-CHANNEL 250V - 0.9Ω - 4A DPAK/IPAK MESH OVERLAY MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STD4NS25 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR ORDERING IN TAPE &

std4ns25

Contextual Info: STD4NS25 N-CHANNEL 250V - 0.9Ω - 4A DPAK/IPAK MESH OVERLAY MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STD4NS25 250 V < 1.1 Ω 4A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED ADD SUFFIX “T4” FOR ORDERING IN TAPE &