4998 TRANSISTOR Search Results

2N5001

Abstract: TCA 875 MW-82 2N5149 2N4999
Contextual Info: TYPES 2N4999. 2N5001, 2N5147, 2N5149 P-N-P SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TRAN SISTO RS W ITH CO M PUTER-D ESIG NED IS O TH E R M A L G EO M ETR Y • For Complementary Use With 2N 4998, 2N 5000, 2N 5148, and 2N 5150 • 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

2N5000

Abstract: circuit 2N 3055 TIP 122 transistor APPLICATION circuit transistor tip 5530 2N4998 tip 147 TRANSISTOR BD 147 TRANSISTOR TIP 411 TRANSISTOR tip 127 2N5148
Contextual Info: TYPES 2N4998, 2N5000, 2N5148, 2N5150 N-P-N SILICON POWER TRANSISTORS HIGH-FREQUENCY POWER TRANSISTORS WITFT COMPUTER-DESIGNED ISOTHERMAL GEOMETRY For Complementary Use With 2N4999, 2N5001, 2N5147, and 2N5149 6 mJ Reverse Energy Rating with lc = 5 A and 4 V Reverse Bias

TLP 527

Abstract: tlp527 2N 60 Application notes TIP527 TIP528 2N4998 2N5685 TIP640
Contextual Info: TYPES TIP527, TIP528 P-N-P SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIE R A N D H IG H -SPEED -SW ITC H IN G A P PLIC A TIO N S r mechanical data • 20 0 V Min V B R C E O • 8-A Rated Continuous Collector Current • 60 Watts at 100°C Case Temperature

2N6884

Abstract: 2N5683 2N5684 c358c 2N5685 2N4998 TIP640
Contextual Info: TYPES 2NS683, 2N5684 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR P O W ER -A M PLIFIER A N D H IG H-SPEED-SW ITCHING A P PLIC A TIO N S DESIG N E D FOR C O M P LE M E N TA R Y USE W ITH 2N 5685, 2IM5686 V • 300 Watts at 25°C Case Temperature | •

TLP647

Abstract: TIP 642 transistor transistor 2N 3792 BV 642 TIP640 TIP641 TIP642 TIP645 TIP646 TIP647
Contextual Info: TYPES TIP645, TIP646, TIP647 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED IFOR COMPLEMENTARY USE WITH TIP640, TIP641, TIP642 175 W at 25°C Case Temperature • Min h f e of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100 mJ Reverse Energy Rating

transistor b1184

Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
Contextual Info: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K

a/TO111

Contextual Info: Microsemi NPN Transistors Part N um ber JA N S2N3997 JA N S2N3998 JA N S2N3999 JA N TX2N 2880 JA N TX2N 3749 JA N TX2N 3996 JA N TX2N 3997 JAN TX2N 3998 JAN TX2N 3999 JA N TXV2N 2880 JA N TXV2N 3749 JA N TXV2N 3996 JA N TXV2N 3997 JA N TXV2N 3998 JA N TXV2N 3999

BD633

Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
Contextual Info: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.

B0638

Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
Contextual Info: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g

B0738

Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
Contextual Info: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m

2SC 1885

Abstract: 2sc low noise
Contextual Info: T ransistors From very small EM3 type package to high power PSD package the power dissipation is equivalent to TO-220, Pc=35W transistors. EM3 • UMT • SMT Three types are available to allow the most suitable package depending on size specifications.

Contextual Info: 2SC4997 / 2SC4998 2SC4618 / 2SC4098 / 2SC2413K / 2SC2058S Transistors I High-frequency Amplifier Transistor, RF switching 2SC4997 / 2SC4998 •Feature« •A b s o lu te maximum ratings T a = 2 5 t 1 ) High ft. (fr—240MHz) P a ra m e te r •P a c ka g in g specifications and hre

mosfet based power inverter project

Abstract: hybrid vehicle power inverter electric cooling water pump engine car FS600R07A2E3 FS800R07A2E3 SAK-TC1797-512F180E AC QFP-176 1ED020I12FTA FS300R07A1E3 FS800R
Contextual Info: Hybrid Electric and Electric Cars Electromobility driven by semiconductor innovations www.infineon.com/ev 10679_Broschüre Elektroauto_rud_rz.indd 2 18.10.10 16:31 Stepping up to the Energy Challenge The need to conserve natural resources, reduce emissions and raise energy efficiency has become a major public concern. Amidst worries about dependence on

FS800R07A2E3

Abstract: FS50R07W1E3_B11A FS400R07A1E3 tc1782 SAK-TC1797-512F180E AC dc-dc converter 50kW 100kW 10kw dc-dc mosfet based power inverter project 2ED020I12FA FS50R07W1E3
Contextual Info: Hybrid Electric and Electric Cars Electromobility driven by semiconductor innovations [ www.infineon.com/ev] Stepping up to the Energy Challenge The need to conserve natural resources, reduce emissions and raise energy efficiency has become a major public concern. Amidst worries about dependence on

CG1 HOYA

Abstract: diode a4W ccd color Linear Image Sensor FTF5066C 74131 74151 pin configuration CCD IMAGE .47k capacitor image 74151 PIN DIAGRAM ccd image sensor
Contextual Info: IMAGE SENSORS DATA SHEET FTF5066C 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066C • Image format 36 x 48 mm • 33M active pixels (4992H x 6668V)

A1W TRANSISTOR

Contextual Info: IMAGE SENSORS DATA SHEET FTF5066C 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066C • Image format 36 x 48 mm •

DALSA AREA CCD

Abstract: Diode A3X
Contextual Info: IMAGE SENSORS DATA SHEET FTF5066C 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2009, November 3 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066C • Image format 36 x 48 mm •

Tip 26C transistor

Abstract: tip 26c T1P142 tip140 texas instruments TIP142 Application Note TIP14Z 1N014 tlp142 circuit 2N 3055 transistor tip 3055
Contextual Info: TYPES TIP140, TIP141, TIP142 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS DESIGNED FOR COM PLEM ENTARY USE WITH TIP145, TIP146, TIP147 125 W at 25°C Case Temperature • Min hpE of 1000 at 4 V , 5 A 10-A Rated Collector Current • 100-mJ Reverse Energy Rating

3055 5C pnp transistor

Abstract: tip 212 tip 127 texas instruments cd 5151 cd darlington complementary power amplifier tip 142 TIP 42 transistor darlington circuit tip 42 tip darlington pnp tlp111 transistor tip 3055
Contextual Info: TYPES TIP110, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH TIP 1 1 5 , T IP 1 1 6 , TIP 117 • High SO/1 Capability, 40 V and 1.25 A • 50 W at 2 5 °C Case Temperature •

TIP 41 transistor

Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
Contextual Info: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C

TIP 642 transistor

Abstract: transistor 2N 3792 2N5333 4998 transistor 2N4300 APPLICATION MIN 5758 2N DIODE TIP 75 transistor
Contextual Info: TYPE 2N5333 P-N-P EPITAXIAL PLANAR SILICON POWER TRANSISTOR FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N4300 15 W at 100°C Case Temperature Max V E|„, of 0.45 V at 1 A Typ ton of 150 ns at 1 A l c lc

FTF5066M

Abstract: B688 Transistor TG p10 CCD IMAGE ccd image sensor Dalsa 75151 CCD Linear Image Sensor dalsa cmos diode a4W
Contextual Info: IMAGE SENSORS DATA SHEET FTF5066M 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2008, July 1 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066M • Image format 36 x 48 mm • 33M active pixels (4992H x 6668V)

Contextual Info: IMAGE SENSORS DATA SHEET FTF5066M 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2006, October 30 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066M • Image format 36 x 48 mm •

DALSA AREA CCD

Abstract: FTF5066C
Contextual Info: IMAGE SENSORS DATA SHEET FTF5066M 33M Full-Frame CCD Image Sensor Product specification DALSA Professional Imaging 2009, November 3 DALSA Professional Imaging Product Specification 33M Full-Frame CCD Image Sensor FTF5066M • Image format 36 x 48 mm •