4925 B MOSFET Search Results

4925 B

Abstract: 4925 B mosfet 4925 B transistor APM4925 8A330
Contextual Info: APM4925 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-6.1A, RDS ON = 24mΩ(typ.) @ VGS = -10V S1 1 8 D1 Super High Density Cell Design G1 2 7 D1 Reliable and Rugged S2 3 6 D2 SO-8 Package G2 4 5 D2 RDS(ON) = 30mΩ(typ.) @ VGS = -4.5V

4925 B mosfet

Abstract: 4925 B 4925 B transistor APM4925K STD-020C 51A MARKING CODE
Contextual Info: APM4925K Dual P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-6.1A , D1 D1 RDS ON =24mΩ(typ.) @ VGS=-10V RDS(ON)=30mΩ(typ.) @ VGS=-4.5V • • • • D2 D2 S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8

32N50Q

Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C TC = 25°C, pulse width limited by TJM

32N50Q

Abstract: IXFH32N50Q
Contextual Info: HiPerFETTM Power MOSFETs Q-Class IXFH 32N50Q IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM IAR TC = 25°C, pulse width limited by TJM

32N50Q

Abstract: 4925 B transistor 125OC 30n50 728B1
Contextual Info: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C

32N50Q

Abstract: 30N50Q 125OC 30n50
Contextual Info: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q 500 V 30 A 0.16 Ω 500 V 32 A 0.15 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient

Contextual Info: IXFH 32N50Q IXFT 32N50Q HiPerFETTM Power MOSFETs Q-Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C

Contextual Info: VDSS HiPerFETTM Power MOSFETs Q-Class IXFH/IXFT 30N50Q IXFH/IXFT 32N50Q Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 TC = 25°C IDM TC = 25°C,

4925 B smd

Abstract: star power for star delta with inch reverse
Contextual Info: FSPYE130R, FSPYE130F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

Contextual Info: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened

MIL-STD-750E

Abstract: STRH100N10 STRH100N10FSY1
Contextual Info: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ Single event effect (SEE) hardened

STRH100N10

Abstract: STRH100N STRH100N10FSY1 MIL-STD-750E DSASW003741 Doc ID 17486 Rev 4 STRH100N10FSY01
Contextual Info: STRH100N10 N-channel 100 V, 0.030 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened

Doc ID 17486 Rev 7

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 70 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

RELAY 20A 12V

Abstract: 2E12 FSPYE130D1 FSPYE130R3 Rad Hard in Fairchild for MOSFET
Contextual Info: FSPYE130R, FSPYE130F Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Fairchild Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mΩ 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH100N10 Rad-Hard 100 V, 48 A N-channel Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 48 A 30 mOhm 135 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 70 krad TID TO-254AA • SEE radiation hardened

3845 48V to 12V buck boost converter

Abstract: ua 3843 38C44
Contextual Info: MIC38C42/3/4/5 BMM BiCMOS Current-Mode PWM Controller Preliminary Information General Description Features The MIC38C4x is a fixed frequency, high performance, current-mode PWM controller. This improved BiCMOS de­ vice is pin compatible with 384x bipolar devices but in the

motorola transistor 912

Abstract: MTP3035V MTP3055V 221A-06 AN569 MTP3055VL
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP3055V TMOS V™ Power Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This

SMP60

Abstract: uc3842 half bridge UC3842 buck 3843 application note 3844 pwm circuits UC3842 mosfet driver 31DQ10 equivalent 8 pin 4v power supply converter buck uc3842 application note buck using uc3842
Contextual Info: MIC38C42A/43A/44A/45A Micrel, Inc. MIC38C42A/43A/44A/45A BiCMOS Current-Mode PWM Controllers General Description Features The MIC38C4xA are fixed frequency, high performance, current-mode PWM controllers. Micrel’s BiCMOS devices are pin compatible with 384x bipolar devices but feature

MC 3843

Abstract: P60N06-14 N49 Switching p60n 38c42 C4234 MIC38HC43BM MC 3843 circuit 3845 48V to 12V buck boost converter 40v N- and P-Channel dip-8
Contextual Info: General Description Features The MIC38C4x and MIC38HC4x are fixed frequency, high performance, current-mode PWM controllers. M icrel’s BiCMOS devices are pin compatible with 384x bipolar de­ vices bu1 feature several improvements. ‘HC’ versions sup

PWM IC 8-PIN DIP

Abstract: buck uc3842 application note PWM IC 8 PIN DIP 3844 ic 3843 external
Contextual Info: MIC38C/HC42/3/4/5 BiCMOS Current-Mode PWM Controller Advance Information General Description Features The MIC38C4x and MIC38HC4x are fixed frequency, high performance, current-mode PWM controllers. Micrel’s BiCMOS devices are pin compatible with 384x bipolar de­

PWM IC 8 PIN DIP 3844

Abstract: 38c43 38hc43 38c42 38c44 flyback "gate 7" "dip-8" 3845 n equivalent VALUE IC pin configuration of ic 3844 4925 B equivalent ic IC UC3842
Contextual Info: MIC38C/HC42/3/4/5, MICI 8C42/3/4/5 BiCMOS Current-Mode PWM Controller General Description Features The MIC38C4x and MIC38HC4x are fixed frequency, high perform ance, current-m ode PWM controllers. M icrel's BiCMOS devices are pin compatible with 384x bipolar de­

MIC18HC45AJ

Abstract: MIC18C45AJ MIC18C43AJ MIC18C45
Contextual Info: MIC38 42/3/4/5, MICI 8 42/3/4/5 BiCMOS Current-Mode PWM Controller Preliminary Information General Description Features The MIC38C4x and MIC38HC4x are fixed frequency, high performance, current-mode PWM controllers. Micrel’s BiCMOS devices are pin compatible with 384x bipolar de­