48TSOP Search Results

ba37

Abstract: 48FBGA K8D1716U K8D1716UBC K8D1716UTC samsung nor flash BA251
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

Contextual Info: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended

Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History 0.0 Draft Date Remark Initial Draft July 25, 2004 Advance Support 48TSOP1 Lead Free Package September 16, 2004 1 Revision 0.1

1E49Ah

Abstract: Samsung nand MLC
Contextual Info: OneNAND256 KFG5616x1A-DEB5 FLASH MEMORY OneNANDTM Specification Density OneNAND256 Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG5616U1A-DIB5

F222

Contextual Info: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)

BA17

Abstract: K8D3216UT K8D3216
Contextual Info: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package

Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

BA37

Abstract: ba37 diode K8D1716UBC 48FBGA K8D1716U K8D1716UTC samsung nor flash BA2411 150us
Contextual Info: K8D1716UTC / K8D1716UBC FLASH MEMORY Document Title 16M Bit 2M x8/1M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft July 25, 2004 Advance 0.1 Support 48TSOP1 Lead Free Package Sep 16, 2004 Preliminary

48FBGA

Abstract: BGA24 ba3101 BA4910 ba4410 BA4111
Contextual Info: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package

tsop1748

Abstract: onenand block map onenand Flash Memory SAMSUNG OneNAND
Contextual Info: OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)

Contextual Info: K8D3x16UTC / K8D3x16UBC NOR FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package

SLC NAND endurance 100k years

Abstract: 802AH
Contextual Info: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)

Contextual Info: K8D3x16UTC / K8D3x16UBC FLASH MEMORY Document Title 32M Bit 4M x8/2M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft June 18, 2002 1.0 Final Specification November 13, 2002 1.1 Not support 48TSOP1 Package

KS32P6632

Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
Contextual Info: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor

A3 3308

Abstract: ST23L6410 Sitronix
Contextual Info: ST Sitronix ST23L6410 64-Mbit 8M x 8 / 4M x16 Mask ROM FEATURES „ „ „ „ GENERAL DESCRIPTION The ST23L6410 is a wide range operation, 64M-bit, Read Only Memory. It is organized as 8M x 8 bits (byte mode) or Bit organization - 8M x 8 (byte mode) - 4M x 16 (word mode)

Contextual Info: PRODUCT PREVIEW Smart5 BOOT BLOCK FLASH MEMORY FAMILY 2, 4, 8 MBIT 28F200B5, 28F400B5, 28F800B5 • SmartVoltage Technology — Smart5™ Flash: 5V Reads, 5V or 12V Writes — Increased Programming Throughput at 12V V pp ■ Very High-Performance Read — 2-, 4-Mbit: 60 ns Access Time

28f800b5

Abstract: 28F002BC 28F008 28F200B5 28F800 AB-60 ab-65 28f400
Contextual Info: E AB-60 APPLICATION BRIEF 2/4/8-Mbit SmartVoltage Boot Block Flash Memory Family Overview December 1996 Order Number: 292154-004 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

BGA-48-0608

Abstract: BS616LV2012 BS616LV2012AC BS616LV2012AI BS616LV2012DC BS616LV2012DI BS616LV2012TC BS616LV2012TI TSOP1-48
Contextual Info: BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2012 „ DESCRIPTION „ FEATURES • Very low operation voltage : 2.7 ~ 3.6V • Very low power consumption : Vcc = 3.0V C-grade: 30mA Max. operating current I -grade: 35mA (Max.) operating current

BS616LV2011AC

Abstract: BS616LV2011AI BS616LV2011DC BS616LV2011DI BS616LV2011EC BS616LV2011EI BS616LV2011TC BS616LV2011TI TSOP2-44 BS616LV2011
Contextual Info: Preliminary BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit „ FEATURES • Very low operation voltage : 2.4 ~ 5.5V • Very low power consumption : Vcc = 3.0V C-grade: 20mA Max. operating current I-grade: 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current

SST39LF200A

Abstract: SST39LF400A SST39LF800A SST39VF200A SST39VF400A SST39VF800A
Contextual Info: 2 Mbit / 4 Mbit / 8 Mbit x16 Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A SST39VF200A / SST39VF400A / SST39VF800A SST39LF/VF200A / 400A / 800A3.0 & 2.7V 2Mb / 4Mb / 8Mb (x16) MPF memories Data Sheet FEATURES: • Organized as 128K x16 / 256K x16 / 512K x16

LHMN5

Abstract: 48TSOP LH5332600 LH5332600N LH5332600T LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV
Contextual Info: NBA/ INFORMATION LH5332600 • High-speed 32M-bit Mask-Programmable ROM Pin Connections Description The LH5332600N/T User's No. : LHMN56XX/LHMN5FXX is a CM OS 32M-bit mask-programmable ROM organized as 4 194 304X8 bits (Byte mode) or 2 097 152X 16 bits (Word

MR27T802F

Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

MR27T1602L

Abstract: A13 MARKING CODE
Contextual Info: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株

MR27V1652L

Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.