4800MA Search Results

asus

Abstract: FA8142 PT8300 RS690M ATI M76-M m64m H5401 PT8700 M64-M ATXP1 8632e
Contextual Info: 5 4 3 2 1 */E*/I &PSGO MEKVEQ VGA VCORE D AMD CPU S1g1 CPU VCORE PAGE 85 PAGE 80 Clock gen. DDR2-800MHz PAGE 29 Dual Channel DDR2 D SO-DIMM X 2 Power On Sequence Up to 4GB DDRII PAGE 7,8,9 PAGE 32 PAGE 3,4,5 Li-Ion 6 cells:4800mAH,3S2P,53.28W (3S2P;4.2*3=12.6V;2400mAH*2=4800mAH;

BRS105

Contextual Info: Data Sheet Model No.: 160CK Type : Rechargeable Nickel Cadmium Cylindrical Cell Nominal Dimension with Sleeve : ∅ = 26.2mm H = 50.0mm : Recommended discharge current 320 to 4800mA Voltage (V) 1.6 Nominal Voltage : 1.2V 1.4 Nominal Capacity : Minimim : 1600mAh

Contextual Info: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS8030T2R2NJGJV Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage

Contextual Info: Spec Sheet INDUCTORS High Reliability Application SMD Power Inductors for Industrial / Automotive Comfort and Safeｔｙ Applications (NR series H type / V type / S type) NRS8030T2R2NJGJV Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T2R2NJGJ Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

GP160AAHC

Contextual Info: Data Sheet Model No.: GP160AAHC Fast Charge Charge control required Voltage (V) 1.6 Type : Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 160 to 4800mA 1.4 Nominal Voltage

NRS8030T

Contextual Info: Spec Sheet INDUCTORS SMD Power Inductors NR series S type NRS8030T2R2NJGJ Features Item Summary 2.2 H(±30%), 4900mA, 4800mA Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 1000pcs Products characteristics table External Dimensions

ASUS

Abstract: M64-M ATI M64-M H5401 U4100 f3K inverter U2900 TPA6017 RS690M f7kr
Contextual Info: 5 4 3 2 1 */ &PSGO MEKVEQ VGA VCORE D AMD CPU S1g1 CPU VCORE PAGE 85 PAGE 80 Clock gen. PAGE 29 Dual Channel DDR2 DDR2-800MHz D SO-DIMM X 2 Power On Sequence Up to 4GB DDRII PAGE 7,8,9 PAGE 32 PAGE 3,4,5 Li-Ion 6 cells:4800mAH,3S2P,53.28W (3S2P;4.2*3=12.6V;2400mAH*2=4800mAH;

Contextual Info: Data Sheet Model No.: GP160AAHC Fast Charge Charge control required Voltage (V) 1.6 Type : Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 160 to 4800mA 1.4 Nominal Voltage

GP160AAHC

Abstract: CQS3361 GP rechargeable battery GP BATTERY
Contextual Info: Data Sheet Model No.: GP160AAHC Fast Charge Charge control required Voltage (V) 1.6 Type : Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension (with Sleeve) : Applications : Recommended discharge current 160 to 4800mA 1.4 Nominal Voltage

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

4800MAH

Contextual Info: DLG BATTERY CO. LTD Data Sheet Model No: Document Number DRS-187-S rev: 0 Type: Rechargeable Nickel Metal Hydride Cylindrical Cell Nominal Dimension : <5=14.5mm with sleeve H=50.5mm Applications: Recommended discharge current 235 to 7050 mA Nominal Voltage:

Contextual Info: Enhanced H I V f e m o iy S y s t e m s In c . DM4M32SJ6 M ultibank EDO 4Mb x 32 Enhanced DRAM SIMM Product Specification Features A rchitecture • Four Integrated 2,048 x 32 SRAM Cache Row Registers Allows 12ns Random Reads Within 4 Active Pages Multibank Cache

Contextual Info: LUXEON MZ Best combination of brightness, uniformity and luminance enabling precision light control Introduction LUXEON MZ emitters are illumination grade LEDs designed to enable indoor, outdoor and industrial applications with all of the features of LUXEON M including the identical solder footprint, but allowing for tighter beam control

Contextual Info: F, . FLM5964-18DA r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 8.5dB (Typ.) High PAE: r!add = 31% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz

FLM3742-18F

Abstract: 4532 fet
Contextual Info: FLM3742-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Ω

FLM3135-18F

Contextual Info: FLM3135-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 10.5dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -45dBc@Po = 32.0dBm Broad Band: 3.1 ~ 3.5GHz Impedance Matched Zin/Zout = 50Ω

FLM5964-18DA

Abstract: 5964-18DA 5964-18D
Contextual Info: FLM5964-18DA F| if m - i • I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G -j^B = 8.5dB (Typ.) High PAE: r iadd = 31% (Typ.) Low IM 3 = -45dBc@Po = 31.5dBm Broad Band: 5.9 ~ 6.4GHz

FLM5359-18F

Contextual Info: FLM5359-18F C-Band Internally Matched FET FEATURES • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 8.5dB (Typ.) High PAE: ηadd = 35% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 5.3 ~ 5.9GHz Impedance Matched Zin/Zout = 50Ω

U/25/20/TN26/15/850/FLM6472-18DA

Contextual Info: FLM6472-18DA F| I Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: riadd = 30% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

FLM7177-18DA

Abstract: T-34038
Contextual Info: FLM7177-18DA Fuffrsu Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P-idg = 42.5dBm Typ. High Gain: G-j^B = 7.5dB (Typ.) High PAE: r iadd = 30% (Typ.) Low IM3 = -45dBc@Po = 3 1 .5dBm Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q

aeg 3589

Abstract: 1 928 404 072
Contextual Info: FLM4450-18F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 43.0dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: hadd = 36% (Typ.) Low IM3 = -46dBc@Po = 32.0dBm Broad Band: 4.4 ~ 5.0 GHz Impedance Matched Zin/Zout = 50W

P240C

Abstract: P-240C 0033C 35C6
Contextual Info: INDIVIDUAL DATA SHEETS Typical Charge Characteristics P-240C C size KR26/50 Type: N Dimensions (with tube) (mm) 1.8 Voltage (V) 1.7 +0 25.8 - 1.0 (+) 1.6 0˚C 1.5 20˚C 1.4 1.3 45˚C 1.2 1.1 25.8 +- 01.0 Charge : 240mA(0.1C)x 15hrs. 1.0 0.9 (+ ) 3 6 9 12

PAGE12

Abstract: PAGE13 QKR032-D MLB-451616-0060P-N1 6090R
Contextual Info: MAG.LAYERS Scientific- Technics Co., Ltd. MLB-451616-0060P-N1 Reliability Report TEL：886-3-5972488 Fax ：886-3-5972477 http：//www.maglayers.com.tw MAG. LAYERS Scientific-Technics Co., Ltd. TEL：886-3-5972488 Fax：886-3-5972477 http：//www.maglayers.com.tw