48 H DIODE Search Results

Contextual Info: HV202 HV203 Low Charge Injection 8-Channel High Voltage Analog Switch Ordering Information_ Package Options V PP - V NN 28-pin plastic DIP 28-lead plastic chip carrier 48-lead TQFP Die in waffle pack 2 0 0V H V 20220P H V 20220P J

Contextual Info: □ IXYS H H ifl JL æ* X HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 V CES C25 V CE sat = 600 V = 48 A = 2.5 V Preliminary data sheet Symbol Test Conditions v CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i

HE1aN-P-DC9V-Y5

Abstract: HE1AN-P-DC12V-Y5
Contextual Info: HE PV Type VDE Ideal for Solar inverter Compact size, 1 Form A 48A Power Relay HE RELAYS PV Type FEATURES • 48 A current at 250 V AC achieved in compact size L: 33 x W: 38 × H: 36.3 mm L: 1.299 × W: 1.496 × H: 1.429 inch Due to improved conduction efficiency,

Contextual Info: Û U A L IT Y T E C H N O L O G IE S CORP S7E ] 74bbaSl 0 0 D4 3 1 Ô S7Ô M A T Y European “Pro Electron” Registered Types _ CNY48 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon PhotoDarlington Amplifier A C T h e C N Y 48 c o n sists o f a g alliu m a rse n id e , in fra re d e m ittin g

Contextual Info: What H E W L E T T mLftM P A C K A R D 2488 Mb/s Single Mode Fiber Transceiver for SONET OC-48/SDH STM-16 and ATM Technical Data HFCT-5402D F eatures Applications • 1300 nm S in gle M ode T ra n sceiver fo r SONET/SDH S hort R each Links • C om pliant w ith p rop osed

cr 4180 r4

Abstract: Nippon capacitors
Contextual Info: M O TO R O LA Order this document by MRFIC0913/D SEM ICO N DUCTO R TECHNICAL DATA The M RFIC Line M R F IC 0 9 13 900 M H z G a A s Integrated Pow er Am plifier This integrated circuit is intended for GSM class IV handsets. The device is specified for 2.8 watts output power and 48% minimum power added efficiency

Contextual Info: NOV 1 2 992 P R E L i Ml U N A R Y l t c i i 49 _LTCl 149-3.3/LTC1149-5 TECHNOLOGY High Efficiency Synchronous Stepdown Switching Regulator u r n N o v e m b e r 19 9 2 FC A TU R C S D C S C R IP T IO N • Operation to 48 V Input Voltage T h e LT C 114 9 is a fa m ily o fs y n c h ro n o u s s te p d o w n switch­

Contextual Info: u rm TECHNOLOGY m L Final Electrical Specifications LTC1483 Ultra-Low Power RS485 Low EMI Transceiver with Shutdown M a y 19 9 4 K O T U IK S D €SCRIPTIOn • L o w P o w e r: Ice ■ 1 2 0 p A M a x w ith D riv e r D isab le d T h e L T C 1 48 3 is an ultra-low p ow e r differential line trans­

S10SC3M

Abstract: S15SC3M S30SC3M d10sc3m S25SC6M S10SC
Contextual Info: ^ -iT T -h RECTIFIER DIODES SHINDENGEM. ELELCTRICJ1FG t B a r r ie r E3 m V rm lo [V ] [A ] m To [•c ] 60 4 113 Type No. D4SC6M ' D10SC3M / 3M R , 4M / 4M R 6M > S10SC3M 3MR ^ *• , 4M -• 4MR„ S10SC3 40 Tj Vf max Pc] —40— H 25 Ifsm Tstg [A ] 60

SC26P

Abstract: SC12P sm 04 IPA75 sm 4500 SC19P
Contextual Info: 'Al'ACITOKS ELKCTROM« S fo r p o w er Snubber Capacitors & Modules SM series (Module for IGBT * Low-inductance & high-Q * Easy connecting eq u iva le n t circuit SM04 Type IG B T Diode rv c E S ] [V R R M ftoftrr] 600/150 600/10/0.05 Cap F] 1.5 V R /V P

Contextual Info: P 1000 A.P 1000 S &  Axial lead diode Standard silicon rectifier diodes P 1000 A.P 1000 S <  =  6  =  = 2 02  6  =  = 2   =    = )   3 :  3 A  3 5  3 B  3 ;  3 C  3  #<< # , 3  " 

Contextual Info: Military 54LS42A fc MOTOROLA 1-oMO Decoder MPO inun ELECTRICALLY TESTED PER: MIL-M-38510/30703 The LSTTL/MSI 54LS42A is a multipurpose decoder designed to accept four BCD inputs and provide ten mutually exclusive outputs. The LS42A is fabricated with the Schottky barrier diode process for

Contextual Info: STV7617, STV7617D, STV7617U PLASMA DISPLAY PANEL SCAN DRIVER FEATURE • ■ ■ ■ ■ ■ ■ ■ ■ 64/65 SELECTABLE OUTPUT PLASMA DISPLAY DRIVER 100 V ABSOLUTE MAXIMUM SUPPLY 5 V SUPPLY FOR LOGIC 100/850 mA SOURCE/SINK OUTPUT 700 mA SOURCE/SINK OUTPUT DIODE

Contextual Info: QuickSwitch Products Semiconductor, I nc . High-Speed CMOS 12-ßit 2:1 Mux/Demux Switch With Resistor Termination on the Demux Side FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5Q. bidirectional switches connect inputs

699h

Contextual Info: O rd e rin g n u m b e r: EN 699H , SAHYO SVC321SPA N 0 .6 9 9 H Diffused Junction Type Silicon Diode Varactor Diode IOCAP for AM Receiver Electronic Tuning Features • The SVC321SPA is a varactor diode with a good linearity and high capacitance ratio that is capable of

zener diode marking R11

Abstract: A113 CTB112 CTB132 MMG1001NT1 XMD112 XMD132
Contextual Info: Freescale Semiconductor Technical Data Document Number: MMG1001NT1 Rev. 7, 10/2006 Gallium Arsenide CATV Integrated Amplifier Module Features • Specified for 79 - , 112 - and 132 - Channel Loading • Excellent Distortion Performance • Built - in Input Diode Protection

MSM 7227

Abstract: FU 9024 N Panaflo fbk TPV 3100 p9712 panaflo fba06t24h fu 9024 MSM 8260 FBA08A24H FBA09A24H
Contextual Info: SECTION REFERENCE INDEX Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . . . . . . . . . 20-279 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . . . . . 280-622 Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 623-654

CMD1210

Contextual Info: ALPHA IND/ CTL MICROüJAVE □565303 OQQQGMO □ r OSE D T-Ô7 - / CMD SERIES GUNN DIODES Features • Available from 4 GHz through 110 GHz • High Efficiency • Low Noise • Maximum Output Power/Frequency Levels • Pulsed Devices with Several Watts

lcda15c-8.tb

Contextual Info: LCDA12C-8 and LCDA15C-8 Low Capacitance TVS Diode Array For Multi-mode Transceiver Protection PROTECTION PRODUCTS Description Features The LCDAxxC-8 has been specifically designed to protect sensitive components which are connected to data and transmission lines from over voltages caused

7B1L

Contextual Info: Quality Semiconductor, I nc. QuickSwitch Products qs32X383 High-Speed CMOS o 20-Bit Bus Exchange qs 32X2383 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • bidirectional switches connect inputs to outputs • Zero propagation delay QS32X383

IN821

Contextual Info: INTERNATIONAL 1N821 SEMICONDUCTOR, INC. thru 1N829A TEM PER ATU R E C O M PEN SATED ZEN ER REFERENCE DIODES 6.2 and 6.5 5 V O L T N O M IN A L Z E N E R V O LT A G E MAXIMUM RATINGS Operating Tem perature: -55 °C to +200 0C Storage Tem perature: -55 °C to +200 °C

.25 watt Zener diode

Abstract: 1N4465 1N4475 1N4474 n448 N449 1N4460 1N4496 1N6485 1N6486
Contextual Info: 1N 4460 thru 1N 4496 and 1N 6485 thru 1N6491 Microsemi Corp. The diode experts SCOTTSDALE, /1Z ☆JÀ N S Ï 1.5 WATT G LA SS ZEN ER DIODES FEATURES • • • • • • • • Microminiature package. High performance characteristics. Stable operation at temperatures to 200°C.

Contextual Info: A S E A BROUN/ABB SEMICON A3 Netz-Thyristor-Diode-M odule d " | □ □ 4 0 3 0 Û O O O D l l ] ^ t~ r-Z 5 -Z 3 Phase control Thyristor-Diode-M odules Daten pro Diode oder Thyristor/data per diode or thyristor/les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: IRGP6640DPbF IRGP6640D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 40A, TC =100°C tSC 5µs, TJ max = 175°C G C G IRGP6640DPbF TO-247AC E VCE(ON) typ. = 1.65V @ IC = 24A n-channel