48 56NG Search Results

56NG mosfet

Abstract: 48 56NG 56NG 4856N 4856ng 369D
Contextual Info: NTD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features •ăTrench Technology •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices

LMC 84

Abstract: 1n5j 20NG 095 K3639 1n0j 100 042 LMC 40R12 3N9G 10NG 20NG
Contextual Info: CERAMIC CHIP INDUCTORS •FEATURES ABCO chip inductor is wire wound type ceramic Inductor. And our product provide high Q value. So ABCO chip inductor can be SRF self resonant frequency industry. This can often eliminate the need for variable components in tunner circuits

56NG mosfet

Abstract: 4856ng NTD4856N-1G 369D 4856N NTD4856NT4G
Contextual Info: NTD4856N Power MOSFET 25 V, 89 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com

4856ng

Abstract: NTD4856NT4G
Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

56NG mosfet

Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

Contextual Info: NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • • • • • • Trench Technology Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses

HK212539NJ

Contextual Info: 高周波積層チップインダクタ MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES 0603D｜55V125C 1005D｜55V125C＊ OPERATING TEMP. ｜55V85C＊ 1608D｜40V85C ＊保証定格により変わります。 ＊Operating temperature depends on rated current.

Contextual Info: 高周波積層チップインダクタ MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES 0603D｜55V125C 1005D｜55V125C＊ OPERATING TEMP. ｜55V85C＊ 1608D｜40V85C ＊保証定格により変わります。 ＊Operating temperature depends on rated current.

18M5L

Abstract: 3N3S 30E K03
Contextual Info: 高周波積層チップインダクタ MULTILAYER CHIP INDUCTOR FOR HIGH FREQUENCY HK SERIES 0603D｜55V125C 1005D｜55V125C＊ OPERATING TEMP. ｜55V85C＊ 1608D｜40V85C ＊保証定格により変わります。 ＊Operating temperature depends on rated current.