48 13NG Search Results

48 13NG Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
LQW18AN13NG00B		Murata Manufacturing Co Ltd	General Purpose Inductor, 0.013uH, 2%, 1 Element, Wirewound-Core, Reflow soldering, 1608/0603	PDF
LQW18AN13NG00J		Murata Manufacturing Co Ltd	General Purpose Inductor, 0.013uH, 2%, 1 Element, Wirewound-Core, Reflow soldering, 1608/0603	PDF
LQW15AN13NG80B		Murata Manufacturing Co Ltd	General Purpose Inductor, 0.013uH, 2%, 1 Element, Wirewound-Core, Reflow soldering, 1005/0402	PDF
LQW18AN13NG00D		Murata Manufacturing Co Ltd	General Purpose Inductor, 0.013uH, 2%, 1 Element, Wirewound-Core, Reflow soldering, 1608/0603	PDF
LQW15AN13NG00B		Murata Manufacturing Co Ltd	General Purpose Inductor, 0.013uH, 2%, 1 Element, Wirewound-Core, Reflow soldering, 1005/0402	PDF

48 13NG Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
48 13ng mosfet Abstract: 369C 369D NTD4813N NTD4813NT4G TF 241 Contextual Info: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4813N NTD4813N/D 48 13ng mosfet 369C 369D NTD4813N NTD4813NT4G TF 241	PDF
48 13ng mosfet Abstract: 48 13ng Contextual Info: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4813N NTD4813N/D 48 13ng mosfet 48 13ng	PDF
13ng Abstract: NTD4813N 4813NG NTD4813N-1G 369D 4813N 369ac Contextual Info: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	NTD4813N NTD4813N/D 13ng NTD4813N 4813NG NTD4813N-1G 369D 4813N 369ac	PDF
48 13ng mosfet Abstract: 369D NTD4813N 4813ng Contextual Info: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	NTD4813N NTD4813N/D 48 13ng mosfet 369D NTD4813N 4813ng	PDF
48 13ng mosfet Abstract: NTD4813N Contextual Info: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4813N NTD4813N/D 48 13ng mosfet	PDF
Contextual Info: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	NTD4813N NTD4813N/D	PDF
369D Abstract: NTD4813N Contextual Info: NTD4813N Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com	Original	NTD4813N NTD4813N/D 369D NTD4813N	PDF
4813N Contextual Info: NTD4813N Power MOSFET 30 V, 40 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	NTD4813N NTD4813N/D 4813N	PDF
IN 4002 MIC diode Abstract: MA47054 1N5719 equivalent ma-47266 1N5719 JANTX diode D 07-15 15 Contextual Info: M/A-COM SEMICONDnBRLNGTON ApKcm 11 D • SbM2E14 GD0113M T ■MIC Axial Lead PIN Diodes Features ■ GLASS HERMETIC SEALED PACKAGES ■ SCREENABLE TO JANTXV AND MILITARY SPECIFICATIONS ■ LARGE SIGNAL SWITCH DESIGN ■ LOW CAPACITANCE 0.1 pF PIN DIODES	OCR Scan	SbM2E14 GD0113M IN 4002 MIC diode MA47054 1N5719 equivalent ma-47266 1N5719 JANTX diode D 07-15 15	PDF