47B DIODE Search Results

Contextual Info: BZW25-47B Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage56 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage47 I(PPM) Max.(A)Pk.Pulse Current30.5

47B diode

Abstract: network resistor rcd RCD1647B RCD16-47B RCD1647B6 RCD16-47B6 SO20 SSOP20
Contextual Info: RCD16-47B  Application Specific Discretes A.S.D.TM RCD NETWORK FOR BUS TERMINATION MAIN APPLICATIONS In any electronic equipment where a suitable bus termination is requiredto avoid signal reflectionsand distortions : PC and workstation computer Data-line analyzers

RCD1647B

Abstract: RCD16-47B RCD1647B6 RCD16-47B6 SO20 SSOP20
Contextual Info: RCD16-47B  Application Specific Discretes A.S.D.TM RCD NETWORK FOR BUS TERMINATION MAIN APPLICATIONS In any electronic equipment where a suitable bus termination is requiredto avoid signal reflectionsand distortions : PC and workstation computer Data-line analyzers

3015-6

Abstract: 47B diode 74LS RCD16-47B S020 47B marking
Contextual Info: I SGS-THOMSON RCD16-47B GilDlgtftiOtiLIgTOOKlKgi R-C-D TERM INATO R NETW ORKS T A R G E T S P E C IF IC A T IO N FEATURES □ Network of 16 R-C-D line terminators. □ Termination without DC current consumption. □ Integrated diode to clamp undershoot.

Contextual Info: HARRIS SEUICOND SECTOR bSE T> m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM9130 D, R, H M3GES71 DÜH1D71 47b « H A S 2N7307D, 2N7307R 2N7307H Radiation Hardened P-Channel Power MOSFETs June 1993 Package Features • 6A, -100V, RDS(on) • 0JS50Q

Contextual Info: E 1 • 7 ^ 2 3 7 G040D2b 47b ■ SGTH s G s-THOMSON SGS-THOMSON M 54H C 194 M 74H C 194 'T - H C - ö 'l'O S 4 BIT PIPO SHIFT REGISTER ■ HIGH SPEED tpo = 13 ns TYP. at V c c = 5V ■ LOW POWER DISSIPATION Ic e = 4 piA (MAX.) at TA = 2 5 °C ■ HIGH NOISE IM M UN ITY

Contextual Info: austriamicrosystems AG is now ams AG The technical content of this austriamicrosystems datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com

marking 531 121

Abstract: S1 DIODE schottky diode MARKING CODE 4b
Contextual Info: Central Semiconductor Corp. C M D S H -3 SUPER-MINI SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, d e sign ed fo r fa s t s w itch in g applications requiring a low forward voltage

ZENER 34b

Abstract: zener diode 33B marking 43b zener 35b 52B zener 46B zener Zener diode 81A MARKING 46B 47B diode 43B diode
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

Contextual Info: Central Semiconductor Corp. CMDSH-3 SUPER-MINI SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, designed for fast switching applications requiring a low forward voltage

ZENER 34b

Abstract: 5252B 5255B zener diode 33B CMBZ52XX 43B MARKING 8f zener CMBZ-5252B 40b marking diode 43b
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE _3.0 2.8 0.14 0.48 "538 2.6 2.4 _ 1. 02 _ 0.89 _2 .00 _ 0.60 0.40 Marking CMBZ5230B 31B 32B

rf2001

Abstract: RF2007 RF2005 rf2000 FL01
Contextual Info: » m FAGOR S7E 345^5 D D G D ? n 754 IFGRS RF2001 . RF2007 „ FAGOR ELECTRONICS .Amp. Silicon Rectifier Diodes • Dimensions in nun. DO-15 Voltage 50 to 1.000 V. Plastic Current 2.0 A. at 55°C. Mounting instructions 1. Min. distance from body to soldering point,

A479

Abstract: r-14 a479
Contextual Info: ESAG63-004 2 oa SCHOTTKY BARRIER DIODE • 4 ^ ^ : Features • 1ftVF Low V F m m Connection Diagram Super high speed sw itchin g. • 1 u - :t - High reliability by planer design. ■ fflìÉ : Applications High speed pow er sw itch in g . M axim um Ratings and Characteristics

5B1 zener diode

Abstract: zener 5B1 2B2 zener diode planar transistor 5B1 zener 4B7 15B zener diode 110B 150B BZX55B 2b7 zener diode
Contextual Info: ZMM1B.ZMM200B SILICON PLANAR ZENER DIODES LL-34 in MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon request. These diodes are also available in DO-35 case with the type

CMBZ-5240B

Contextual Info: 'IL CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1= ANODE 2= NC 3 = CATHODE 3.0_ ~ 2.8 0.14 0.48 538 3 2.6 2.4 _1.02 o.ar 2.00_ 1.80 0.60 0.40 Marking CMBZ5230B 31B

Contextual Info: V 3 7 v-OW K Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS S60SC4M U nit : mm Case : MTO-3P 5.0 =°3 40V 60A •T jl5 0 t; # P r r s m T ' / ^ V ì - ' i S bI 0.B5 ±a* 'M •S R *g •D C /D C □ v n - ÿ 9Wm, © © m S * - A . O Affiü • a s . iK-S ’ y im m

Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 3.0_ “ 2.8 0.14 0.48 0.38 3 2.6 2.4 1.02 7>.8<T 2.00 0.60 0.40 1.80 Marking CMBZ5230B 31B

2B2 zener diode

Abstract: 5B1 zener diode zener 4B7 6b2 zener diode zener diode 4B3 zener 5B1 5B1 IR 2B2 zener zener 6b8 110B
Contextual Info: ZMM 1B.ZMM200B SILICON PLANAR POWER ZENER DIODES LL-34 in MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon request.

2B2 zener diode

Abstract: planar transistor 5B1 5B1 zener diode zener diode 4B3 zener 5B1 ZMM200B 2B2 zener zener 5B6 zener 6b8 110B
Contextual Info: ZMM 1B.ZMM200B SILICON PLANAR ZENER DIODES LL-34 in MiniMELF case especially for automatic insertion. The Zener Cathode band voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon request.

erm 38b

Abstract: 5252B
Contextual Info: CMBZ52XX series CDIL SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN nun Pin configuration 1= ANODE 2 = NC 3 = CATHODE 3.0 2.8 0.14 0.48 0.38 3 2.6 2.4 — I- T •FT 1.02 I 0.89 2 .00 _ 0,60 0.40 1.80

2B2 zener diode

Abstract: zener 5B1 5B1 zener diode zener 4B7 zener 3b6 zener diode 4B3 ZMM15-B planar transistor 5B1 6b2 zener diode 12b zener
Contextual Info: ZMM 1B.ZMM200B SILICON PLANAR POWER ZENER DIODES LL-34 in MiniMELF case especially for automatic insertion. The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages are upon request.

5251B

Abstract: CMBZ-5251B 5257B zener 35b 43B diode 5233B 5234B CMBZ-5243B marking 43b marking 8G
Contextual Info: CMBZ52XX series SILICON PLANAR ZENER DIODES General purpose zener diodes PACKAGE O UTLIN E DETAILS ALL D IM EN SION S IN m m Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2.8 0.48 1 0.38 ri 3 i 2.6 1 2.4 11 0.14 _!-02_ 0.89 0.60 0.40 Marking CMBZ5230B 31B

marking code 46B

Abstract: SMB5922B SMB5923B SMB5924B SMB5925B zener 35b SMB 234
Contextual Info: SMB5921B series Surface Mount Zener Diodes SURFACE MOUNT ZENER DIODES 3.0 WATTS P b Lead Pb -Free Features: * Glass passivated chip * Low leakage * Built-in strain relief * Low inductance * High peak reverse power dissipation * For use in stabilizing and clipping circuits with

zener 73B

Abstract: smc5346b SMC53
Contextual Info: SMC5342B series Surface Mount Zener Diodes SURFACE MOUNT ZENER DIODES 5.0 WATTS P b Lead Pb -Free Features: * Glass passivated chip * Low leakage * Built-in strain relief * Low inductance * High peak reverse power dissipation * For use in stabilizing and clipping circuits with high