4735 MHZ Search Results

bcd counter using j-k flip flop diagram

Abstract: ALL CD4059 CD4059 philbrick design a bcd counter using jk flip flop TELEDYNE PHILBRICK V to F TELEDYNE PHILBRICK 4731
Contextual Info: -W-TELECYNE PHILBRICK 10kHz, 100kHz, 1MHz High Reliability, Differential Voltage to Frequency Converters J The 4731, 4733, and 4735 are precision, low drift voltage to frequency converters that are capable of producing 10kHz, 100kHz, and 1MHz output pulse trains from

SMM70N05

Abstract: SMM70N06
Contextual Info: laC » SILICONIX INC C X '!5iliconix • 025*4735 o o m ì o i =i ■ SMM70N06, SMM70N05 incorporated N-Channel Enhancement Mode Transistors TO-2Q4AE TO-3 BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V(BRJDSS -OJO», ■o (A) SMM70N0S 60 0.018 70 SMM70N05 50

2N4092

Abstract: 2N4091 Siliconix JFET Duals 2N409XCHP 2N4093
Contextual Info: SILICÔNIX INC 1ÖE D • 055^4735 QG13Ö17 T ■ 2N4091 SERIES - JANTX, JANTXV .HTSSsSi N-Channel JFET The 2N4091 Series is an all-purpose JFET analog switch which offers low on-resistance, good isolation and very fast switching. Its JAN, JANTX, and JANTXV certification make this device a perfect

2N7092

Contextual Info: SILICONIX INC 33E 1 ITÜSSää • 025*4735 DPlbOSS 4 « S I X 2N7092 P-Channel Enhancement Mode Transistor TO -257A B H erm etic Package TOP VIEW o PRODUCT SUMMARY ■d V BR|DSS rDS(ON ( ii) (A) -2 0 0 0.50 -8 .0 1 GATE 2 DRAIN 3 SO URC E 1 2 3 C ase Isolated

irf113

Abstract: IRFF110 IRFF RFF-11
Contextual Info: SILI CON I X 1ÖE D INC ilicoont. C T ’S S ilic ix_ X M • 025*4735 001470 ^ 3 ■ IRFF110/111/112/113 in c o rp o r a t e d inci N-Channel Enhancement Mode Transistors T -^ o i -0 7 TO-205AF BOTTOM VIEW PRODUCT SUMMARY to PART NUMBER V BR|DSS IRFF11Q

sumida

Abstract: CDRH125 cdrh S-074-5002 sumida CDRH
Contextual Info: SPECIFICATION SUMIDA TYPE CDRH 125 1. DIMENSION UNIT mm PART NO. 0.2 REF. TO THE ATTACHED SHEET. 5.0 y I j MAX. 6.0M ELECTRODE TERMINAL * DIMENSION WITHOUT TOLERANCE ARE APPROX. 2. CONNECTION (BOTTOM) 3. STAMP (Ex.) DIRECTLY STAMP UNFIXED THE POSITION 4. NOTE

Contextual Info: VOLTAGE CONTROLLED OSCILLATOR SURFACE MOUNT MODEL: DCSR4710-8 4710 MHz OPTIMIZED bandwidth FEATURES: ► Optimized Tuning Frequency Band ► Exceptional Phase Noise Performance ► Small Size, Surface Mount ► Lead Free Patented REL-PRO Technology ► Planar Resonator Construction

DCSR4710-8

Contextual Info: VOLTAGE CONTROLLED OSCILLATOR SURFACE MOUNT MODEL: DCSR4710-8 4710 MHz OPTIMIZED bandwidth FEATURES: ► Optimized Tuning Frequency Band ► Exceptional Phase Noise Performance ► Small Size, Surface Mount ► Lead Free Patented REL-PRO Technology ► Planar Resonator Construction

siliconix to-18

Abstract: pad1 PAD10 PAD100 PAD20 PAD50 diode pico-amp PAD1 Siliconix
Contextual Info: IflE D SILICONIX INC • ÔSS4735 D013T1Ô 5 ■ PAD1 SER IES ~T-o\-o°i S ilic o n ix in c o r p o r a t e d Low-Lsakage Pico-Amp Diodes - 1 The PAD1 Series of extremely low-leakage diodes provides a superior alternative to conventional diode technology when reverse current leakage

OV2659

Abstract: OV02659-A47A CSP3 YUV422 omnivision csp3 47PIN 1600x1200 a47a OmniPixel3-HS webcam
Contextual Info: OV2659 2 MP product brief lead free available in a lead-free package 2-Megapixel SOC Camera for the High-Volume Handset Market The OV2659 addresses the increasing demand for 2-megapixel resolution cameras in the high-volume feature phones market. A high-performance system on a

MB571

Contextual Info: AM26LV31C, AM26LV31I LOW-VOLTAGE HIGH-SPEED QUADRUPLE DIFFERENTIAL LINE DRIVERS www.ti.com SLLS201G – MAY 1995 – REVISED MAY 2005 FEATURES • • • • • • • • • • • • • D OR NS PACKAGE TOP VIEW Switching Rates up to 32 MHz Operate From a Single 3.3-V Supply

A2S4735

Contextual Info: Te m ic Siliconix_ 2N7081 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (Q ) Id (A) 100 0.15 13 TO-257AB H erm etic Package D p O Case Isolated G D S N-Channel M OSFET Tbp View Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted)

J230

Abstract: J231 J232 J-231
Contextual Info: SILICONIX INC UrEKSB&S IflE D . • Û254735 aül3öm L, J230 SERIES N -C h a n n el JF E T s 1" " ' T-M -ZS ' The J230 Series of popular, low -cost JFETs offers high p e rfo rm an ce In a w ide rang e of applications. It fe atu res low lea kag e, noise and c u to ff voltage for

2n7077

Contextual Info: Tem ic 2N7077 Siliconix N-Channel Enhancement-Mode Transistor Product Summary VfBRJDSSÎV ri)S cn) (Ö) 400 0.30 : . !d(A) 15 TO-254AA Hermetic Package D p o Case Isolated Ô S D S G Top View N-Channel M OSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

si7792

Contextual Info: SPICE Device Model Si7792DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

pn4117

Abstract: a1pa 2N4117
Contextual Info: SILICONIX INC 3 1ÔE D • Ô25473S DG1BT2E 7 ■ PN4117 SERIES T- ¿°t-ZS Siliconix in c a rp p ra te d N-Channel JFETs The PN4117 and PN4117A Series are n-channel JFETs designed to provide ultra-high input PART NUMBER impedance. The PN4117 Series features I gss of

g2jf

Contextual Info: SILICONIX INC 18E D • fl5S4735 QQ14147 7 ■ VQ7254 SERIES .fiTSSgSCSS ' j I- UfZ. - 7 . ^ 5 1 1—^ ^ N- and P-Channel Enhancement-Mode M O S Transistor Arrays 14-PIN DIP SIDE BRAZE PRODUCT SUMMARY PART NUMBER V BR DSS (V) rDS(ON) Ql + Q2 or Q3 + Q4 TOP VIEW

CD4001 Application

Abstract: OWR1 DG305Acj
Contextual Info: SILICONIX 8254735 SILICONIX I NC 0 3 De J A2S473S INC 03E DDISEIE 4 1~~ 12212 D DG304A/305A/306A/3Ö7A CMOS Analog Switches I T J l.M T-51-11 FEATURES BENEFITS APPLICATIONS • + 15 V Input Range • Full Rail-to-Rail Analog Signal Range • Low Level Switching

LAN89530

Abstract: LAN89530AM
Contextual Info: LAN89530 USB 2.0 to 10/100 Ethernet Controller for Automotive Applications Features •             Designed, fabricated, tested, characterized and qualified for automotive applications TrueAuto design, service and support

Contextual Info: Advance Technical Information HiperFETTM Power MOSFETs Q3-Class VDSS ID25 IXFT70N30Q3 IXFH70N30Q3 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 300V = 70A Ω ≤ 54mΩ TO-268 (IXFT) G S Symbol Test Conditions D (Tab) Maximum Ratings

70N30

Contextual Info: Advance Technical Information IXFT70N30Q3 IXFH70N30Q3 HiperFETTM Power MOSFETs Q3-Class VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 300V = 70A Ω ≤ 54mΩ TO-268 (IXFT) G S D (Tab) Symbol Test Conditions Maximum Ratings

DG641

Abstract: DG641DJ DG641DY DG642 DG642DJ DG642DY DG643
Contextual Info: S ilic o n ix DG641/642/643 A M em b er o f th e T e MIC G ro u p Low On-Resistance Wideband/Video Switches Features Benefits Applications • • • • • • • • • • • • • • • • • • • • • W ide Bandwidth: 500 M H z L ow C rosstalk at 5 M H z: —85 dB

Contextual Info: PART NUMBER 133 - 5 4 D 4 - - 101 133 - 5 4 0 4 - 1 0 6 ITEM <D ITEM BODY CO NTACT <£ BE R Y LLIU M COPPER BR ASS GOLD P L .0 0 0 0 1 MIN O VER GOLD P L .0 0 0 0 3 MIN O VER NICKEL PL . 0 0 0 0 5 MIN O VER NICKEL PL . 0 0 0 0 5 MIN O VER COPPER P L . 0 0 0 0 5 MIN

Contextual Info: USB82640 Automotive USB 2.0 Hub and Flash Media Card Controller Combo Features •               Ultra-fast flash media reader/writer with two exposed Hi-Speed downstream ports for external peripheral expansion Supports Secure Digital SD and SD High Capacity™ (SDHC),