47104 Search Results

771-BLF245B

Abstract: transistor j127
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D096 BLF245B VHF push-pull power MOS transistor Product specification Supersedes data of 2000 Oct 17 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF245B PIN CONFIGURATION

MAL2102

Abstract: 85222E3 technical 164 46105E3 78473 43333E3 68153 13103E 87332E3
Contextual Info: 101/102 PHR-ST www.vishay.com Vishay BCcomponents Aluminum Capacitors, Power High Ripple Current, Screw Terminals FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte • Large types, cylindrical aluminum case, insulated with a blue sleeve

BLF246B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 2001 Oct 10 2003 Aug 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES

TAG 8926

Abstract: Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733
Contextual Info: MCIMX31 and MCIMX31L Multimedia Applications Processors Reference Manual MCIMX31RM Rev. 1 2/2006 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130

bgjg

Abstract: transistor T philips 2322 733 BLF542 UFU370 3a0c 2222 030 capacitor philips philips potentiometer 43t transistor 3909
Contextual Info: Philips Semiconductors_ Product specification UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • • T " 3 <î?~0 cÎBLF542 5tiE D • 711DflSb 0D43TS4 5T3 ■ PHIN PIN CONFIGURATION High power gain Easy power control

SOT123 Package

Abstract: SOT123 BLF244 International Power Sources SOT-123
Contextual Info: Philips Semiconductors Product specification VHF power MOS transistor BLF244 FEATURES • • • • • • 7110ÖEb 0Ü437T5 SMS • PHIN SbE D PHILIPS INTERNATIONAL T-J *?-11 PIN CONFIGURATION High power gain Low noise figure Easy power control Good thermal stability

BLV194

Contextual Info: 7110ô2fci DDb313û TTT « P H I N bSE D PHILIPS INTERNATIONAL UHF power transistor Product specification Philips Semiconductors BLV194 Q U IC K REFERENCE DATA RF performance at T h = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an

2222 kn a

Abstract: 175B BLF277 c17f
Contextual Info: Philips Semiconductors Product specification T -3 1 -tS VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES SbE D • BLF277 711002t. GÜHBÖbb 334 ■ PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization ensures excellent reliability

Contextual Info: K22 Sub-Family Reference Manual Supports: MK22FX512VLK12, MK22FN1M0VLK12 Document Number: K22P80M120SF5RM Rev. 2, May 2013 K22 Sub-Family Reference Manual, Rev. 2, May 2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 About This Document

msa386

Abstract: MGD350 BGY119A BGY119B SC09 pn1996
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY119A; BGY119B UHF amplifier modules Product specification Supersedes data of April 1994 File under Discrete Semiconductors, SC09 1996 May 08 Philips Semiconductors Product specification UHF amplifier modules BGY119A; BGY119B

ltsx e3

Abstract: ltsx e3 PM7329 SCR SS 3328 LTSX LTCE epd 47- 50 2LW MARKING CODE wrr AND I.610 0X00 PM7329
Contextual Info: PM7329 S/UNI-APEX-1K800 DATASHEET PMC-2010141 ISSUE 2 ATM TRAFFIC MANAGER AND SWITCH PM7329 TM S/UNI - APEX-1k800 S/UNI-APEX-1K800 ATM/PACKET TRAFFIC MANAGER AND SWITCH DATASHEET ISSUE 2: JUNE, 2001 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

sandisk eMMC 4.41

Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
Contextual Info: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009

atc 17-33

Abstract: class A push pull power amplifier class B push pull power amplifier philips catalog resistors RGS 13/1 U1 78L05 vhf linear amplifier BLF248 c4l7 SOT262
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF248 VHF push-pull power MOS transistor Product specification Supersedes data of 1997 Dec 17 2003 Sep 02 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF248 PIN CONFIGURATION

Contextual Info: MKT 366 Vishay BCcomponents Metallized Polyester Film Capacitors MKT Radial Epoxy Lacquered Type APPLICATIONS 168x12 halfpage Blocking and coupling. Bypass and energy reservoir w l MARKING h seating plane (1) C-value; tolerance; rated voltage α DIELECTRIC

CI EEPROM 2816

Abstract: 31136 modem 56k sram pcr 4063 12697 scd 9104 SN 104 SCR image top 2556 en CRC10 CRC-10
Contextual Info: IDT77222 Micro SAR User Manual Version 1.0 September 8, 1998 Find IDT on the World Wide Web at: www.idt.com or call us at 1-800-345-7015 IDT is located at: 2975 Stender Way Santa Clara, California, USA 95054-3090 1998 Integrated Device Technology, Inc.

SMD DIODE gp 817

Abstract: smd resistor philips 1206 smd capacitor philips transistor SMD DK philips ceramic capacitors smd SMD Transistor 6f philips smd 1206 resistor SMD TRANSISTOR L6 philips smd 1206 BEP SMD ZENER
Contextual Info: APPLICATION NOTE 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz PCS AN98022 Philips Semiconductors 15 W class-AB amplifier with the BLV2044 for 1930 − 1990 MHz (PCS) CONTENTS 1 INTRODUCTION 2 CIRCUIT DESCRIPTION 3 DC BIAS CIRCUIT 4 RF MEASUREMENT RESULTS

BLF378

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLF378 VHF push-pull power MOS transistor Product specification Supersedes data of 1996 Oct 17 1998 Jul 29 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES BLF378 PINNING - SOT262A1

TRANSISTOR CATALOGUE

Abstract: BLF547 MRB027 2E1P c17 dual mos L24C16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLF547 UHF push-pull power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF push-pull power MOS transistor FEATURES BLF547 PIN CONFIGURATION • High power gain • Easy power control

BLF246B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D075 BLF246B VHF push-pull power MOS transistor Product specification Supersedes data of 1999 Jan 28 2000 Feb 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor FEATURES

tc58nc

Abstract: tc58nc344 TC58NC353F DIN 50960 TC58NC353 47040 250880 c58nc 05735A00 031C4
Contextual Info: TC58NC353F/354F TC58NC353F/354F High Capacity Flash Disk Controller Chip Set OUTLINE TC58NC353 and TC58NC354 are a controller chip set for the PC Card ATA * and IDE Drive. By using TC58NC353 only, up to 8 NAND flash memories of 128M to 1Gbit can be connected by the unit of 1 (e.g. 1,2,3…7,8). In case of

358 SMD transistor

Abstract: smd capacitor philips philips ceramic capacitors smd smd resistor philips 1206 capacitor SMD PHILIPS CERAMIC CAPACITOR SMD PHILIPS transistor SMD DK philips smd 1206 resistor AN98026 SMD Transistor 6f
Contextual Info: APPLICATION NOTE 30 W class-AB amplifier with the BLV2045 for 1930 − 1990 MHz PCS AN98023 Philips Semiconductors 30 W class-AB amplifier with the BLV2045 for 1930 − 1990 MHz (PCS) CONTENTS 1 INTRODUCTION 2 CIRCUIT DESCRIPTION 3 DC BIAS CIRCUIT 4 RF MEASUREMENT RESULTS

GS 78L05 N

Contextual Info: Philips Semiconductors b b S 3 T 31 7 ? a • Ap X ^P ro d u ctsp ecificat^ VHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE BLF248 bR E D PIN CONFIGURATION FEATURES • High power gain • Easy power control 1 • Good thermal stability /~i • Gold metallization ensures

micro copper alloy

Contextual Info: .050 3. ELECTRICAL SPECIFICATIONS: IMPEDANCE: 50 OHM FREQUENCY: DC - 6 GHZ VSWR: 1.25+ .03F CONTACT RESISTANCE: CENTER: 5 MILLIOHMS OUTER: 2.5 MILLIOHMS DESCRIPTION A EWR06-413 BY APPD DATE DCam 2. MATERIALS AND FINISHES: BODY: BRASS PER ASTM B16, GOLD 15 MICRO OVER COPPER

Contextual Info: Product specification Philips S em iconductors HF/VHF power MOS transistor FEATURES BLF241I-: PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement