4710 IC Search Results

4710

Abstract: 18-PIN ScansUX1003 4710 fairchild
Contextual Info: 4710/4710B REGISTER S T A C K - 1 6 x 4 RAM WITH 3-STATE OUTPUT REGISTER FAIRCHILD CMOS MACROLOGIC DESCRIPTIO N - The 4710 is a register oriented high speed 64-bit Read/Write Memory organized as 16-words by 4-bits. An edge triggered 4-bit output register allows new input

PE7037-2

Contextual Info: # 6 -3 2 UNC-2B ,380 DEEP 4 HOLES ,4710 (9 HOLES) .710 TYP. PASTERNACK ENTERPRISES, INC. P.O BOX 1S759, IRVINE, CA 92G23 PHONE (949) 261-1920 FAX (949) 261-7451 S P E C IF IC A T IO N S PASTERNACK ENTERPRISES* COAXIAL & FIBER OPTICS ESTABLISHED 1972 DWG TTTLE

Contextual Info: KSR1107 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching circuit. Inverter, Interface circuit, Driver Circuit • BuiH In blas Resistor (R, »22kQ, Rr-4710) • Complement to KSR2107 ABSOLUTE MAXIMUM RATINGS (TA* 2 5 t : )

EN471

Contextual Info: Ordering n u m b e r :EN4710 SBA160-04Y No.4710 Schottky B arrier Diode Twin Type •Cathode Common 40V, 16A Rectifier A pplications • High frequency rectification (switching regulators, converters, and choppers). F eatu re s • Low forward voltage (Vjr max = 0.55V).

Contextual Info: HUF76450P3, H UF76450S3S Semiconductor March 1999 Advance Inform ation 60V, 0.0085 Ohm, 75A, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs File Number 4710 Features Ultra Low On-Resistance, rnc OM\ = 0.0075£2, Vf i c=10 V rDS(ON = 0.0085i2, VGS= 5 l/

Contextual Info: P35-4710 This G alliu m A rsenid e M onolithic M icrow ave Integrated C ircu it G aA s M M IC is a com plete transceiver for w ireless L A N applications in the 2.4G H z ISM band. Low receive cu rrent requirem ents m ake it particularly u seful for battery

TMS 1024

Abstract: 4103 TMS4103 TMS 2501 TMS 4103 TMS4710 TMS2501 4710 IC 2501
Contextual Info: TIMS 4710, TIMS 2S01. AND TM S 4103 USASCII CHARACTER GENERATORS MOS LSI N O V E M B E R 19 77 • TM S 4 7 1 0 {S tandard F u lly Static 8 K TM S 4 7 0 0 RO M • Complete USA S C II Character Generator Set • Ideal f o r V D T 's • Block Size 8 x 8

SLD25

Abstract: 7851 T2560
Contextual Info: M I C R O S E n i CO RP / R P H 14E D I b l l b 0 4 D 0 0 0 D 0 2 7 □ I im m m ic ro A MICROS EMI COMPANY 3 - ôjr S o lid Pac H ig h Voltage Rectifiers Single Phase Half Wave S ER IE S I PART NUMBER . HEtGHT _ LENGTH SLDHV-1 3/4 1 SLDHV-2 1 3/4 SLDHV-3

j 4310

Abstract: k 4110 4710Y 4710 19MZ la 4110 4110 la 4710 SEL4710Y
Contextual Info: 7^0741 DDDm?b SANKEN 0T4 « S A K J T-1 1/2 Standard Type Diffused SEL4110 R S E L 411 0 W SANKEN LIGHT EMITTING DIODES SEL 4310 G S E L 471 O Y FEATURES • W ide A p plicatio n Range • For Display and Other General Uses • L o n g -life /H ig h R eliability

T2560

Abstract: SLD30 SLD50
Contextual Info: M I C R O S E n i CO RP / R P H 14E D I b l l b 0 4 D 0 0 0 D 0 2 7 □ I im m m icro A MICROS EMI COMPANY 3 - ô jr Solid Pac High Voltage Rectifiers Single Phase Half Wave SERIES I PART NUMBER SLDHV-1 SLDHV-2 SLDHV-3 SLDHV-4 SLDHV-5 SLDHV-6 SLDHV-7 SLOHV-8

Contextual Info: AVED MEMORY PRODUCTS AVED2F662LSD8-XX AVED2F664LSD8-XX Where Quality & Memory Merge 2M X 64 FPM WITH EDO SODIMM USING 2M X 8, 2K & 4K REFRESH 3.3V, LOW Power/Self-Refresh DESCRIPTION The AVED Memory Products AVED2F662LSD8/2F664LSD8-XX is a 2M bit x 64 Dynamic RAM high density memory module.

CX815

Contextual Info: CXB1539Q-Y SONY. Programmable Delay Line/Duty Cycle Controller Description The CXB1539Q-Y is an ultra high speed monolithic ECL Delay Line/Duty Cycle Controller IC. Five binary inputs, So to S*, program the delay time from input Din to output Qd in 23 steps. Binary input

Contextual Info: CXB1539Q-Y SONY. Programmable Delay Line/Duty Cycle Controller Description The CXB1539Q-Y is an ultra high speed monolithic ECL Delay Line/Duty Cycle Controller IC. Five binary inputs, So to S4, program the delay time from input D in to output Q d in 2 3 steps. Binary input

Contextual Info: S ONY CORP/COMPONENT PRODS SDE » Ô3Ô23Ô3 GOO^flñ CXB1539Q-Y SO N Y» Programmable Delay Line/Duty Cycle Controller Description T - H 7 - n Pin Assignment The CXB1539Q-Y is an ultra high speed monolithic EC L Delay Line/Duty Cycle Controller IC. Five binary inputs, So to St, program the delay time

LFU9-030-902-2

Abstract: LFU9-050-362-2 LFU9-080-152-2
Contextual Info: cust.serv@icecomp.com www.icecomponents.com Voice: 800.729.2099 Fax: 678.560.9304 ICE Components, Inc. Line Filters LFU9 Series Features Applications • Broad frequency attenuation • UU cores for compact design • Off-Line Switch Mode Power Supplies • Wide selection available

eprom 2904

Abstract: L 4440 72-Pin SO-DIMM
Contextual Info: Line Up of Hitachi IC Memories Classification SRAM- Total bit Organization word X bit Type Page* HM62W8512A Series. HM628512A Series . HM628512 Series.

SF3000GX21

Abstract: sf3000
Contextual Info: TOSHIBA ÎDISCRETE/0PT03- 3T DeJtDTÏSSD □0 D E 2 c13 4 f T *' 3.S' 3- PHASE CONTROL THYRISTOR SF3000GX21 U n it in mm 4000V 3000A M AXIM UM RATINGS C H A R A C T E R I S T IC Repetitive Peak O ff-S tate Voltage and Repetitive Peak R everse Voltage Non’ R epetitive P eak Reverse

Transistor BSX 47-10

Abstract: Transistor BSX 46-10 K2175
Contextual Info: SIEG 2SC D • öSBSfciQS DDQ4ÖQ7 ! N P N Silicon Planar Transistors Y - 1 * - '* BSX45 BSX46 BSX47 ~ S I E M E N S AKTIE NG ESELLSCHA F BSX 45, BSX 46, and BSX 47 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . Their collectors are electrically connected to their cases. The transistors

Contextual Info: Line Up o f Hitachi IC M emories C la s s ific a tio n T o ta l b it 4M- SRAM- V o lta g e H O rg a n iz a tio n w o rd X bit T yp e 3.3V- 512kx8- HM62W8512A Series 12 1 5V — 512kx8- HM628512A Series - 133 HM628512 S e rie s . 145 HM6741Q0H Series

AN717

Contextual Info: AN717 PROGRAMMING OPTIONS FOR THE EMBER EM35 X PLATFORM Formerly document 120-5073-000 The Ember EM35x series chips are delivered to customers with only a minimal amount of chip identification data programmed into their embedded flash contents. Before these chips can be used in a ZigBee network, the

Contextual Info: SRE D AMERICAN POWER DEVICES ¿fe S E M IC O N D U C T O R S Ü73713S DDDDOm 24b • APD ~-//-<9 7 1N4678-1N4717 american Standard tolerances are 5% 2% 4 1% are available power devices, inc. 250 mW silicon low current zener diodes MECHANICAL CHARACTERISTICS

eprom 2904

Abstract: 4502 C DRAM 64kx16
Contextual Info: Line Up of Hitachi IC Memories C la s s ific a tio n T o ta l b it 4M - S R AM - H O r g a n iz a tio n w o r d x b it V o lta g e Type 3 .3 V - 512k x 8 - HM62W8512A Series 121 5V — 512k x 8 - HM628512A Series - 133 HM628512 S e r ie s . 145 r —

4570

Abstract: 4480 SMV4596A
Contextual Info: SMV4596A 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 £(f) (dBc/Hz) PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 4595 - 4598 MHz • Tuning Voltage: 0-2.5 Vdc • SUB-L - Style Package

Contextual Info: SMV4596A PHASE NOISE 1 Hz BW, typical Rev A1 Voltage-Controlled Oscillator Surface Mount Module Applications • Microwave Radio • Satellite Communications • £(f) (dBc/Hz) 14118 Stowe Drive, Suite B | Poway, CA 92064 TEL: (858) 621-2700 | FAX: (858) 486-1927