470UA Search Results

Contextual Info: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate-Drain voltage Gate Current Drain power dissipation Ta = 25°C

Energizer E91

Abstract: 27-MHz Wireless Mouse energiser 9v battery Energizer aaa 3.6v nicd battery Energizer E91 temperature 27-MHz Wireless Mouse Datasheet basic optical mouse RADIO RECEIVER 27mhz 27 MHZ transmitter
Contextual Info: Calculating Battery Life in WirelessUSB Systems Introduction WirelessUSB Power Requirements In evaluating WirelessUSB™ for use in a project, product or design, one of the key decision factors will be what battery life will be achievable by the design. This may impact decisions

mdt10p621

Contextual Info: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high

Contextual Info: MDT10P72N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high

MDT10P62

Abstract: MDT10P
Contextual Info: MDT10P62 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and

20MHZ

Abstract: 100nnn
Contextual Info: MDT10P621N AB 1. 概述 －TMR0，TMR1，TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断

MDT10P72

Abstract: DC MOTOR SPEED CONTROLLER
Contextual Info: MDT10P72 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high

MDT10P721

Abstract: 20MHZ
Contextual Info: MDT10P721 BB 1. 概述 －A／D 转换完成 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 －PORTB＜7：4＞电平变化中断

Contextual Info: MDT10P62N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and

MDT10P621

Abstract: MDT10P
Contextual Info: MDT10P621 BB -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip

20MHZ

Abstract: MDT10P62 MDT10P
Contextual Info: MDT10P62 BB .1. 概述 －CCP，SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟／记数器

2SK4059TK

Contextual Info: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit: mm Rating Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature Tj 125 °C Tstg −55~125 °C Storage temperature range

2SK4059MFV

Contextual Info: 2SK4059MFV 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK4059MFV エレクトレットコンデンサマイクロフォン用 0.22±0.05 単位: mm 0.32±0.05 0.4 ・過渡応答性に優れる 1.2±0.05 0.8±0.05 1 0.4 1.2±0.05

"Microphone Preamplifier"

Abstract: preamplifier with pdm output electret condenser microphone element FAN3850A digital electret microphone Sn97 digital ECM microphone electret condenser microphone preamplifier condenser microphone 20khz FAN3850AUC16X
Contextual Info: FAN3850A Microphone Pre-Amplifier with Digital Output Features Description ƒ The FAN3850A integrates a pre-amplifier, LDO, and ADC that converts Electret Condenser Microphone ECM outputs to digital Pulse Density Modulation (PDM) data streams. The pre-amplifier accepts analog

Contextual Info: MDT10P721N AB -PortB<7:4> interrupt on change 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise

MDT10P62N

Abstract: 20MHZ
Contextual Info: MDT10P62N AB .1. 概述 －CCP，SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计，集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟／记数器

2SK4059MFV

Contextual Info: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

2SK4059TV

Contextual Info: 2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating VGDO -20 V IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Storage temperature range

Contextual Info: 2SK4059MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059MFV For ECM Unit: mm Application for compact ECM 0.22±0.05 V 10 mA Drain power dissipation Ta = 25°C PD (Note 1) 150 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

Contextual Info: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM Unit: mm Application for compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 • 0.8±0.05 VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Junction Temperature

Contextual Info: 2SK4059TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TV For ECM Unit: mm Application for Ultra-compact ECM 1.2±0.05 Rating 0.4 0.4 2 0.3±0.05 3 Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100

2SK3857CT

Abstract: F 2.2K IDSS
Contextual Info: 2SK3857CT 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK3857CT エレクトレットコンデンサマイクロフォン用 Unit: mm ・CSP パッケージのため小型マイクロフォンに最適 ・感度が高い ・減電圧特性に優れる

2SK4059TK

Contextual Info: 2SK4059TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK4059TK For ECM • Application for compact ECM 0.22±0.05 Unit: mm -20 V Gate Current IG 10 mA Drain power dissipation Ta = 25°C PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature

Bk210

Abstract: 2SK4059TK A3375
Contextual Info: 2SK4059TK 東芝ジャンクション ＦＥＴ シリコンＮチャネル接合形 2SK4059TK エレクトレットコンデンサマイクロフォン用 単位: mm 0.22±0.05 0.9±0.1 絶対最大定格 Ta=25℃ 0.45 0.45 1.4±0.05 ・過渡応答性に優れる