47 10V Search Results

eee-hba471uap

Abstract: PCE3361CT-ND EEEHBE221UAP
Contextual Info: HA Series Rated W.V. VDC 35 50 63 100 Nom. Cap. (µF) 10 22 22 33 33 47 47 100 100 220 220 330 0.1 0.22 0.33 0.47 1.0 2.2 3.3 4.7 10 22 33 33 33 47 47 100 100 220 10 22 22 33 47 47 3.3 4.7 4.7 10 22 22 33 tan δ ≤ Spec. Values (120Hz, +20°C) 0.12 0.16

PCE3474CT-ND

Abstract: PCE3410TR-ND EEV-FK1H221GP EEE-FP1V101AP PCE4445TR-ND PCE3472TR-ND pce3418ct EEVFK1E101XP PCE3469CT-ND EEVFK1H470XP
Contextual Info: FK Series Rated Nom. W.V. Cap. VDC (µF) 10 22 33 33 47 68 100 25 100 150 220 220 330 330 470 470 4.7 10 10 22 33 47 68 35 100 100 100 150 220 220 330 330 4.7 10 10 22 33 33 50 47 47 100 100 150 220 220 4.7 10 22 22 63 33 47 68 100 3.3 4.7 10 80 10 22 33

5k 100 16v

Abstract: 8X14 capacitor 1000 uf 25v k 46
Contextual Info: - E. CAP ISO9002 CERTIFIED MANUFACTURER STANDARD SIZE, SM SERIES, 85°C Cap uF Voltage Tolerance Size 0.1 0.22 0.33 0.47 1 2.2 3.3 4.7 10 10 22 22 22 33 33 47 47 47 47 100 100 100 100 220 220 220 220 1000 1000 1000 2200 2200 2200 50V 50V 50V 50V 50V 50V 50V

5k 100 16v

Abstract: capacitor 2200 uf 25v _ 20% 10v capacitor 2200 uf 2,2 UF 100V capacitor 2200 uF 10v Mobicon
Contextual Info: - E. CAP ISO9002 CERTIFIED MANUFACTURER STANDARD SIZE, SM SERIES, 85°C Cap uF Voltage Tolerance Size 0.1 0.22 0.33 0.47 1 2.2 3.3 4.7 10 10 22 22 22 33 33 47 47 47 47 100 100 100 100 220 220 220 220 1000 1000 1000 2200 2200 2200 50V 50V 50V 50V 50V 50V 50V

capacitor 22uF 250V SMD

Abstract: 0.22uf 250v capacitor 33uf smd CKG57D
Contextual Info: 481_CKG 1/1 Ceramic Capacitors CKG Series Mega Cap SMD CKG57D 150µF(68µF x2) 100µF(47µF ×2) 47µF(22µF ×2) 22µF(10µF ×2) CKG57D 6max. 7max. W max. CKG45D 68µF(33µF ×2) 47µF(22µF ×2) – 10µF(4.7µF ×2) CKG45D 5.5max. Rated voltage DC.10V

Contextual Info: KEMET Part Number: C0402C470J8GACTU C0402C470J8GAC7867 Capacitor, ceramic, 47 pF, +/-5% Tol, 10V, C0G, 0402 General Information Manufacturer: KEMET Electrical Specifications Capacitance: 47 pF Chip Size: 0402 Voltage: 10V Temperature Coefficient: C0G Tolerance:

HG62G

Abstract: HG71G154 hg62g051 HG62G019 HG71G063 HG71G HG71G030 HG62g014 HG51B HG62G035
Contextual Info: Wireless Communications ICs RF Power Amplifier Module Cellular Output PowerSupply Voltage Efficiency Part Number Standard W (V) (•/« Typ.) Technology 47% PF0025 AMPS 6.0 MOSFET 1.2 47% MOSFET PF0026 NMT900, TACS 1.2 6.0 PF0027 E-TACS 47% MOSFET 6.0 1.2

Contextual Info: KEMET Part Number: T520B476M010ATE035 Capacitor, tantalum, 47 uF, 3528, +/-20% Tol, 10V@85C General Information Manufacturer: KEMET Electrical Specifications Capacitance: 47 uF Voltage DC @ 85C: 10V Voltage DC @ 105C: 10V Tolerance: Application: Temperature Range:

Contextual Info: KEMET Part Number: T520B476M010ATE070 Capacitor, tantalum, 47 uF, 3528, +/-20% Tol, 10V@85C General Information Manufacturer: KEMET Electrical Specifications Capacitance: 47 uF Voltage DC @ 85C: 10V Voltage DC @ 105C: 10V Tolerance: Application: Temperature Range:

OP-47

Abstract: raytheon OP47 op47 OP47BD OP47G OP47GM op47gt OP-47BT OP-47CT OP47AD
Contextual Info: Operational Amplifiers OP-47 OP-47 Low Noise, High Slew Rate Operational Amplifier Description The OP-47 is designed for instrumentation grade signal conditioning where low noise both spectral density and burst , wide bandwidth, and high slew rate are required along with low

Contextual Info: OPA547 OPA 5 47 OPA 5 47 OPA 5 47 SBOS056F – JANUARY 2002 – JULY 2005 High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● WIDE SUPPLY RANGE Single Supply: +8V to +60V Dual Supply: ±4V to ±30V ● HIGH OUTPUT CURRENT: 500mA Continuous

1000uf, 16v electrolytic capacitor

Abstract: 1000uf, 10v electrolytic capacitor low esr TANTALUM capacitor ESR vs frequency 10UF 10V -20 fig56
Contextual Info: 5. CONSTRUCTION AND CHARACTERISTICS OF 3. OS-CON Electrical Characteristics 3-1. Frequency Characteristic Fig.5-1 at 25°C 100 A : OS-CON 47µF/16WV (φ6.3X9.8L:306I) B : AI-E (Low Impedance) 47µF/16WV (φ6.3X7L:218I) C : Ta-cap 47µF/16WV (φ6.3X11L:311I)

BD79

Contextual Info: KEMET Part Number: C0805C476M7PACTU C0805C476M7PAC7800 Capacitor, ceramic, 47 uF, +/-20% Tol, 4V, X5R, 0805 General Information Manufacturer: KEMET Electrical Specifications Capacitance: 47 uF Chip Size: 0805 Voltage: Temperature Coefficient: Tolerance:

TANTALUM capacitor ESR vs frequency

Abstract: 2TPE470M6 2TPLF470M4E sanyo tplf 6TPC47MB 2TPSF270M9G 6TPB100MA Electrolytic Capacitor 25V 470uf poscap WAVE Soldering guidelines ELECTROLYTIC
Contextual Info: Ｃharacteristics 1. POSCAP Electrical characteristics 1-1. Frequency characteristics Fig.A Impedance frequency characteristics POSCAP vs other type at 25℃ A：POSCAP 6.3V/47 F (3.5x2.8x1.1mm) B：Tantalum capacitor 6.3V/47μF (3.5x2.8x1.9mm)

oscon sa

Abstract: 10SL10M 20CR
Contextual Info: ５． の構造及び特性 ３．OS-CONの電気特性 ３−１ 周波数特性 図5−1 図5-1 （25℃） 100 A：OS-CON 47 F/16WV（φ6.3x9.8L：306I） B：AI-E（Low Impedance） 47μF/16WV（φ6.3×7L：218I） C：Ta-cap 47μF/16WV（φ6.3×11L：311I）

KSR1204

Abstract: KSR2204
Contextual Info: KSR2204 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO-92S • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47, R2=47 ) • Complement to KSR1204 Ï Î) ABSOLUTE MAXIMUM RATINGS (TA=25

KSR2004

Abstract: KSR1004
Contextual Info: KSR2004 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=47 , R2=47 ) • Complement to KSR1004 Ï Ï TO-92 Î) ABSOLUTE MAXIMUM RATINGS (TA=25

KSR1204

Abstract: KSR2204
Contextual Info: KSR1204 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1 =47 , R2=47 ) • Complement to KSR2204 Ï TO-92S Ï Î) ABSOLUTE MAXIMUM RATINGS (TA=25

KSR1004

Abstract: ksr1004 transistor KSR2004
Contextual Info: KSR1004 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit Driver Circuit, • Built in bias Resistor (R1=47 , R2=47 ) • Complement to KSR2004 Ï TO-92 Ï Î) ABSOLUTE MAXIMUM RATINGS (TA=25

Contextual Info: 100 V, 47 A, 13.2 mΩ Low RDS ON N ch Trench Power MOSFET EKI10198 Features Package  V(BR)DSS - 100 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 18.4 mΩ max. (VGS = 10 V, ID = 23.4 A)

transistor BUX 83

Abstract: bux c st bux bux 47 MARKING BUX bc 201 transistor st bux c Marking 47 transistor BUX transistor k 2718
Contextual Info: 17E D TELEFUNKEN ELECTRONIC • â^SQQ^b OOCHSÔ1 BUX 47 • BÜX 47 A TTiiLSiPIUlMKIiM electronic CrMin*üKhnotoö*«* Silicon NPN Power Transistors ^ ^ Applications: Switching mode power supply, inverters, motor control, and relay driver Features: • In triple diffusion technique

sanyo OS-CON sepc

Abstract: SANYO sepc series electrolytic capacitors TANTALUM capacitor ESR vs frequency sanyo svp series 10K 471 10SVP10M 16SVPA82MAA 2SEPC2700M 35SVPD8R2M 4SEPC560MX
Contextual Info: 1. OS-CON Electrical characteristics 1-1. Frequency characteristics Fig.A Impedance frequency characteristics OS-CON vs other types 100 A : OS-CON 16V/56 F (φ8X6.9L:347 ) B : AI-E (Low impedance) 16V/47μF (φ6.3X7L:218 ) C : Ta-cap 16V/47μF (φ6.3X11L:311 )

Contextual Info: 60 V, 47 A, 7.2 mΩ Low RDS ON N ch Trench Power MOSFET DKI06108 Features Package TO-252  V(BR)DSS - 60 V (ID = 100 µA)  ID - 47 A  RDS(ON) - 9.7 mΩ max. (VGS = 10 V, ID = 23.6 A)

CD860

Abstract: IFN860 NJ3600L IF3602 IFN5911 IFN5912
Contextual Info: Databook.fxp 1/14/99 11:32 AM Page B-47 B-47 01/99 IFN5911, IFN5912 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Wideband Differential Amplifiers Continuous Forward Gate Current Continuous Device Power Dissipation