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Catalog Datasheet	Type	Document Tags	PDF
45f123 Abstract: GT45F123 transistor 45f123 GT45F12 GT45 TCA160 45F12 gt45f Contextual Info: 45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 45F123 For PDP-TV Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • Low input capacitance: Cies = 2700pF (typ.) • Peak collector current: ICP = 200 A (max)	Original	gt45f123 2700pf o-220sis 45f123 +6transistor 45f123 gt45f12 gt45 tca160 45f12 gt45f	PDF
c41dc Abstract: 311C1 BA4916 9117-33 Contextual Info: 1 1 1 1 1 1 1 C1 1 1 1D4DA5541	Original	234566785341978a4bcad33561ceff d47e3 1ce34 1213456789ab1 +7a5541 bc9641deff 7f515e88 c41dc 311c1 ba4916 9117-33	PDF

Catalog Datasheet

Type

Document Tags

PDF

45f123

Abstract: GT45F123 transistor 45f123 GT45F12 GT45 TCA160 45F12 gt45f
Contextual Info: 45F123 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 45F123 For PDP-TV Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • Low input capacitance: Cies = 2700pF (typ.) • Peak collector current: ICP = 200 A (max)

Original

gt45f123 2700pf o-220sis 45f123 +6

PDF

c41dc

Abstract: 311C1 BA4916 9117-33
Contextual Info: 1 1 1 1 1 1 1 C1 1 1 1D4DA5541

Original

234566785341978a4bcad33561ceff d47e3 1ce34 1213456789ab1 +7

PDF