4557 IC Search Results

DS1875

Abstract: GPON APD DS1842 JESD51-7 MAX1932
Contextual Info: 19-4557; Rev 1; 3/11 76V, APD, Bias Output Stage with Current Monitoring The DS1842 integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A switch FET is used in conjunction with an external DC-DC controller to create

MAX1932

Contextual Info: 19-4557; Rev 1; 3/11 76V, APD, Bias Output Stage with Current Monitoring The DS1842 integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A switch FET is used in conjunction with an external DC-DC controller to create

high voltage current mirror

Abstract: DS1842 avalanche photodiode bias MAX1932 14 TDFN-EP GPON block diagram Current Mirror FET current mirror rise time apd
Contextual Info: 19-4557; Rev 0; 4/09 76V, APD, Bias Output Stage with Current Monitoring The DS1842 integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A switch FET is used in conjunction with an external DC-DC controller to create

2SK2199

Abstract: J2040
Contextual Info: Ordering number:EN4557 _ 2SK2199 No.4557 N -Channel MOS Silicon FET I Very High-Speed Switching Applications F e a tu re s • Low ON resistance. •Very high-speed switching, ■Low-voltage drive. A b so lu te M axim um R a tin g s at Ta = 25°C Drain-to-Source Voltage

SD-8981-4V4

Contextual Info: 10 MAT'L NO. ENG NO. PLATING OPTION 15-24-4157 A-8981-4V4 TIN/LEAD 15-24-4557 A-8981-4V4-LF TIN 9.53 .375 8.78 0 Q.74 .029 5.08 .200 ° | TYp_ RECOMMENDED PCB HOLE LAYOUT I y Ÿ ; NOTES : vzzzzzzzzzzZ. 0 * 096^025 6.98 .275 MX) l-56±0-l° ,oei±.oo4 4X)

4558 pre amplifier circuit

Abstract: upc4557 4558f power amp F 4558 MPC4557 Tc 4558 ic f 4558 UPC4557 equivalent 4557 ic 4558 pre amp
Contextual Info: HPC4557 High Performance Dual Operational Amplifier FEATURES GENERAL DESCRIPTION T h e ¿IPC 4557 is a d ua l o p e ra tio n a l a m p lifie r w h ic h • In te rn a l F re q u e n c y C o m p e n s a tio n fe a tu re s h ig h e r o u t p u t c u rre n t d riv e c a p a b ility th a n th a t

Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

k 2750 transistor

Abstract: 4557 ic NCP03XH103F05RL NCP03WF104F05RL thermistor 10k 3380 0603 3539 transistor IC 4543 NCP03XM102p05RL NCP03WL473p05RL NCP03XV103p05RL
Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

NCP15WF104D03RC

Abstract: 4557 ic IC 4614 NCP15XH103D03RC 4582 transistor 4557 transistor C 3998 NCP15WB473D03RC murata ntc 47k ohm 3950 thermistor 100K
Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

4557f

Abstract: ACTIVATED SIM CARD ISO7816 LTC1514 LTC4557 LTC4557EUD MO-220
Contextual Info: LTC4557 Dual SIM/Smart Card Power Supply and Interface U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4557 provides power conversion and signal level translation needed for 2.5G and 3G cellular telephones to interface with 1.8V or 3V subscriber identity modules

Contextual Info: LTC4557 Dual SIM/Smart Card Power Supply and Interface FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO The LTC 4557 provides power conversion and signal level translation needed for 2.5G and 3G cellular telephones to interface with 1.8V or 3V subscriber identity modules

4558 dv

Abstract: LTC4558 4558 diagram application TRANSISTOR 4558 qfn24 socket sim card Analog Switch Sim card diagram LTC1555L LTC4558E 4558
Contextual Info: LTC4558 Dual SIM/Smart Card Power Supply and Interface FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Power Management and Control for Two SIM Cards or Smart Cards Independent 1.8V/3V VCC Control for Both Cards Supports Simultaneous Powering of Both Cards

4558f

Abstract: 4558 PIN ca 4558 Sim card diagram 4558 C esd sim card 4558 diagram application 4558 4558 dv 4558 C equivalent
Contextual Info: LTC4558 Dual SIM/Smart Card Power Supply and Interface FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Power Management and Control for Two SIM Cards or Smart Cards Independent 1.8V/3V VCC Control for Both Cards Supports Simultaneous Powering of Both Cards

jr 4558

Abstract: 4558 diagram application f 4558 ic 4558 4558 ic f 4558 fa 4558 7 4658 diagram for IC 4558 46505
Contextual Info: SOLID STATE LAMPS H E W L E T T jjjjjj PACKARD CO M PO N EN TS HIGH E F F IC IE N C Y R ED • 5082-4650' Series Y E L L O W - 5082-4550 Series G R EEN • 5082-4950 Series T E C H N IC A L D A TA APR IL 1976 Features HIG H INTENSITY CH O IC E OF 3 B R IG H T CO LO RS

28548

Abstract: 92967
Contextual Info: June 1997 JS9P11-AS PRELIMINARY J S 9 P 1 1 -A S 1. R F P E R F O R M A N C E S P E C IF IC A T IO N S CHARACTERISTICS SYM BOL Output Power at 1dB J a = 25 °C CONDITION MIN. TYP. MAX. UNIT PidB — 25.0 — dBm — 8.0 — dB Compression Point Power Gain at 1dB

riaa preamplifier 4558 circuit diagram

Abstract: M5228 4557 ic M5228P ic 4558 audio diagram 4558 audio operational preamplifier 4558 circuit diagram
Contextual Info: MITSUBISHI ICS AV COMMON M5228P/FP QUAD LOW-NOISE OPERATIONAL AMPLIFIERS (DUAL POWER SUPPLY TYPE) DESCRIPTION The M5228 is a semiconductor integrated circuit designed for a low-noise preamplifier in audio equipment and a general-purpose operational amplifier in other electronic

DVE4557-41

Abstract: Parametric Varactor diodes series and parallel resonance 100-C DVE4556-01 DVE4556-11 DVE4556-12 DVE4556-31 DVE4556-41 DVE4556-51
Contextual Info: ALPHA IN»/ SEM IC ON DU CT OR 33E » • 0SflSMM3 OQOQ'ìbS 7 ■ ALP "T-07-u GaAs Parametric Amplifier Varactors Features ■ ■ ■ ■ ■ Description High Gain and Low Noise Temperature Deloach and Houlding Measurements Insured Reproductibiiity High Reliability and Space Qualified

Contextual Info: MITSUBISHI <LINEAR ICs> M5228P, FP QUAD LOW-NOISE OPERATIONAL AMPLIFIERS DUAL POWER SUPPLY TYPE DESCRIPTION The M5228 is a semiconductor integrated circuit designed for a low-noise preamplifier in audio equipment and a general-purpose operational amplifier in other electronic

nxft15xh103

Abstract: NCP15WF104F03 NTC 50-11 thermistor sensor NCP18XV NCP15WF104D NCP03WF104F05RL NCP18WF104D NCP18WB473D 99029 transistor NTC 15 0718
Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.

C4557

Abstract: PC4557 UPC4557C nec pc4557 4557 ic PC4557C c455 c 4557 4557 nec UPC4557
Contextual Info: SEC ¿/P C 4 5 5 7 DUAL HIGH-PERFORM ANCE OPERA TIO N A L AM PLIFIER NEC Electronics Inc. P in C o n fig u r a t io n D e s c r ip t io n T h e /¿P C 4 5 5 7 is a d u a l o p e ra tio n a l a m p lifie r w h ic h fe a ­ tu re s h ig h e r o utpu t d riv e c u rre n t than that of th e

Contextual Info: S C IE N TIF IC / M I N I - C I R C U IT S 4TE D • f lD b f if lll DDD14E1 4Tb « S C C active, low noise Frequency Mixers M odel I n v IU 1-74-09-01 UNCL-R1H UNC L-R1H + 17 dBm LO, up to + 1 dBm RF computer-automated performance data typical production unit

Contextual Info: REVISIONS DESCRIPTION REV DATE o o RELEASED APPROVED 4/29/96 OSP PLUG .XXX = in XX.X = mm ELECTRICAL ENVIRONMENTAL MECHANICAL Nominal Impedance Ohms 50_ Frequency Range (GHz) DC - 18.0 Vibration - MIL-STD-202, Method SPECTRA CATOLOG Torque 1.04 + .006 F(GHz)

5609 dec transistor

Abstract: nxft15xh103 NTC thermistor 3380 b 10k ohm
Contextual Info: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications. Therefore, please approve our product specifications or transact the approval sheet for product specifications before ordering.