45 M 32 A Search Results

BCX59

Abstract: sm 170 380 BCX 59 -9 BCX58 bcx599
Contextual Info: MOTOROLA SC {XSTR S/R FÏ 6367254 M OTO RO LA SC Tt XSTRS/R DE~| bBb7SS4 Q0fil7Sa 0 | F 96D 8 1 7 2 2 D - BCX58,-7,-8,-9,-10 BCX59,-7,-8f-9,-10 M A X IM U M R A T IN G S BCX 59 U nit 32 45 Vdc 32 45 Sym bol BCX 58 Collector-Emitter Voltage VC E O

Contextual Info: MITSUBISHI LS Is SRAM MODULE STATIC RAM 256K X 32 O M BIT Max. Type name Access Load memory time Outward dimensions Data sheet W x H x D (mm) page (ns) MH25632N-25 25 MH25632N-35 35 MH25632N-45 45 MH25632NZ-25 25 MH25632NZ-35 35 MH25632NZ-45 45 97.79 X 20 X 8.6

Contextual Info: JUN 10 1982 32K x 32 SRAM moìaic PUMA 2S1010-030/35/45/55/70 Issue 2.0 : May 1992 PRELIMINARY S e m ic o n d u c to r Inc. Pin Definition 1,048,576 bit CMOS High Speed Static RAM Features Ultra Fast access times of 30/35/45/55/70 ns. Configurable as 32 / 16 / 8 bit wide output.

pv41

Contextual Info: PRELIMINARY I DT 7 M P V4 0 6 0 IDT7MPV41 45 128K x 32, 256K x 32 3.3V C M O S STATIC RAM MODULES jdt Integrated De vice T ech n o logy, Inc. F E A TU R E S : DE S CR I PT IO N: • High d ensity 4 m egabit and 8 m egabit static RAM m odules The ID T 7M P V 4060 is a 128K x 32 static RAM m odule

marking 68L

Abstract: BCW68L BCW67 BCW67AL BCW67BL BCW67CL BCW67L BCW68 BCW68FL BCW68GL
Contextual Info: D I 12E MAXIMUM RATINGS S ym bol BCW67 BCW68 U n it C o lle ctor-E m itter Voltage R ating VcEO 32 45 Vdc Collector-Base Voltage VCBO 45 Em itter-Base Voltage Vebo 5.0 Vdc ic 800 m A dc C o lle ctor C urrent — C ontinuous 60 MOTORCLA M ax U n it Pd 225 mW

marking 68g

Abstract: 67A SOT 23 6 BCW67
Contextual Info: Tb M O T O R O L A SC Í X S T R S / R F> r 6367254 M OT OR OL A SC CXSTRS/R D l T | b3L,755M 96D F 81953 D D flnsa D M A XIM U M RATINGS Sym bol BCW67 BCW68 Coliector-Emitter Voltage Rating VCEO 32 45 Vdc Collector-Base Voltage VCBO 45 60 Vdc Emitter-Base Voltage

MB7132E

Abstract: CY7C282-45 IM5618 mb7132 DM74S188A DM87S229 HM7680-5 HM7680P-5 HM7681-5 MB7132H
Contextual Info: - 32 - 6 3 8 0 X 4 •/ f- > ?m%3Cl2l æ ít % £ cc> TAAC max ns TCAC max (ns) 45 25 45 25 TOH max (ns) 7" ft tt TOE max (ns) CY7C282-45 CYPRESS CY7C282-45 CYPRESS DM74S188A NS 0 —'70 25 20 DM74S288A NS 0-70 25 20 DM87LS181 NS 0— 70 100 DM87S181A NS

S6260

Contextual Info: Integrated Device Technology, Inc. 64K x 32, 3.3V SYNCHRONOUS SRAM WITH PIPELINED OUTPUTS AND INTERLEAVED/LINEAR BURST COUNTER FEATURES: • 64K x 32 m em ory configuration • S upports high system speed: -4 4ns clock a ccess tim e 133 MHz -45 4.5ns clock a ccess tim e (117 MHz)

csr bc4

Contextual Info: MOSEL VITELIC PRELIMINARY V408J232 2M x 32 HIGH PERFORMANCE EDO MEMORY MODULE Features Description • 2,097,152 x 32 bit organization ■ Utilizes High Performance 1M x 4 C M O S DRAMs ■ Fast access times: 45, 50 or 60 ns ■ Fast Page mode with Extended D ata Out

IEC61131

Abstract: VN808 VN808-32-E VN808-E VN808TR-32-E
Contextual Info: VN808-32-E Octal channel high side driver Features Type RDS on Iout VCC VN808-32-E 150 mΩ 1A 45 V • VCC/2 compatible input ■ Junction overtemperature protection ■ Case overtemperature protection for thermal independence of the channels ■ Current limitation

POWERSO36

Abstract: VN808CM-32-E VN808CMTR-32-E 12436 POWERSO36 footprint
Contextual Info: VN808CM-32-E Octal channel high side driver Features Type RDS on Iout VCC VN808CM-32-E 160 mΩ 1A 45 V • CMOS compatible input ■ Junction overtemperature protection ■ Case overtemperature protection for thermal independence of the channels ■ Current limitation

VN808

Abstract: VN808-32-E TAB 429 H IEC61131 VN808-E
Contextual Info: VN808-32-E Octal channel high side driver Features Type RDS on Iout VCC VN808-32-E 150 mΩ 1A 45 V • VCC/2 compatible input ■ Junction overtemperature protection ■ Case overtemperature protection for thermal independence of the channels ■ Current limitation

TAB 429 H

Abstract: 12436 VN808CM-32-E
Contextual Info: VN808CM-32-E Octal channel high side driver Features Type RDS on Iout VCC VN808CM-32-E 160 mΩ 1A 45 V • CMOS compatible input ■ Junction overtemperature protection ■ Case overtemperature protection for thermal independence of the channels ■ Current limitation

Contextual Info: nixYS VHF 25 Advanced Technical Information ECO-PAC Single Phase Rectifier Bridge ldAV = 32 A VRRM = 600-1200 V Test Conditions *dAV Tc = 8 5 °C , m odule 32 A ^TAVM^FAVM Tc = 8 5 °C; 180° sine ; per thyristor 16 A ^TSM^FSM TVJ = 45°C ; V R= 0

Contextual Info: DT Si J tdw E —H Wire Range c i — jD L - “T SbO/S I Krimptite BRASS MARKING: ETC -+D m o le x INCORPORATED •H " 3/32 3/32 3/32 3/32 7/64 7/64 3/32 7/64 3/32 3/32 7/64 7/64 1/4 1/4 1/4 1/4 5/16 5/16 1/45/16 1/4 1/4' 5/16 5/16 Plating No Plating

Contextual Info: 16K X 32 CMOS DUAL-PORT STATIC RAM MODULE SSÎX \dt IDT7M1002 Integrated Dev ice Technology» Inc. DESCRIPTION FEATURES • High density 512K C M O S dual-port RAM module • Fast access times — Commercial: 25, 30, 35, 40, 45, 55, 65ns — Military: 30, 40, 45, 55, 65ns

BSW21A

Abstract: 2n2222 npn BSW22A BC107 BCY65E BC17 BC178 BSX51A BSX52A BCY58
Contextual Info: Small Signal M etal TO-18 METAL TRANSISTORS NPN TYPES G E N E R A L PURPOSE SW ITCH A N D A M P L IF IE R v CEO V C E R (+ ) (V q q ) I q max. (m A ) H pE min. @ NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN 45 20 32 45 60 25 50 60 25 50 60 100 100 200 200

s3003 SERVO

Abstract: FCR16 MB90568
Contextual Info: MB90568 - 0- 0 a. U1H/UIL : EU] uih 27 27 M- . . UJL'Wb. U2H/U2L [U] - U2H 32 32 . . WL c. Fosc [/] 200 60 55 50 45 M- 4 - •M. -1i — 1 - J1- -J1 : . I L J J Ü - i i d. Trise i i EuSl -.11 i i —i e i -1 j • -.14 1 i : 1 1 e. Dutu 1 1

Contextual Info: 512K X 8 SRAM molaic MS8512FK-45/55 Issue 3.1 : September 1993 S e m ic o n d u c to r Pin Definition 524,288 x 8 CMOS High Speed Static RAM Features Very Fast Access Times of 45/55 ns JEDEC Standard 32 pin DIL footprint Operating Power 1050 mW typ. Low Power Standby

Contextual Info: MAR 2 6 1993 256KX32SR AM m o ì a i MS32256FKX-020/025/35/45 c Issue 1.1: February 1993 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r - Inc. Pin Definition 262,144 X 32 CMOS High Speed Static RAM

55ay

Contextual Info: N m . ŒT H J J F DIM MILLIMETER A 2 0 .32 TOL .76 B C D E F G H 10.16 9.78 45" 3.81 1.52 1.52R 3.05 .13 .13 5° .13 .13 .13 .13 1 J 3.30 DIA 2 2 .86 .13 .13 K M N 16.51 4.70 0.13 .13 REF .02 INCHES .800 TOL .050 .400 .385 45" .150 .060 .060R .120 .005 .005

Contextual Info: M O S E L V IT E L IC V53C832L H IG H PER FO R M A NC E 3.3 VOL T 2 5 6 K X 32 ED O PA G E M O D E CM O S DYNAM IC R A M P R E LIM IN A R Y HIGH PERFORMANCE 30 35 40 45 50 Max. RAS Access Time, tRAC 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA)

Contextual Info: E 2X M I I —I ; 1— I ! ' ! I. I K F DIM MILLIMETER A 2 0 .32 TOL .76 B C D E F G H 10.16 9.78 45" 3.81 1.52 1.52R 3.05 .13 .13 5° .13 .13 .13 .13 1 J K M N 3.30 DIA 2 2 .86 16.51 4.70 0.13 .13 .13 .13 REF .02 INCHES .800 TOL .050 .400 .385 45* .150 .060

V53C832H

Contextual Info: MOSEL V I T E L I C V53C832H H IG H PER FO R M A NC E 2 5 6 K X 32 EDO P A G E M O D E CM OS DYNAM IC R A M HIGH PERFORMANCE P R E LIM IN A R Y 30 35 40 45 50 Max. RAS Access Time, tp^c 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tQ ^)