45 M 15 B Search Results

2N3055

Abstract: 2n5471 TRANSISTOR 2Sc 2525 2N1487 2N1488 2N1490 2N1702 2N3442 2N3445 MJ2955
Contextual Info: General Transistor Corporation CASE lc M A X V ceo (SUS) TO-3 = 2-50A = 35-500V NPN Power Transistors PNP VCEO M 1C (max) (A) hFE@ic/Vc* (min-m« @ A/V) VCE(SAT) @IC/IB (V @ A/A) V8E @IC/VCE (V @ A/V) 40 55 40 55 6 6 6 6 15-45 @ 1.5/4 15-45 @ 1.5/4 25-75 @1.5/4

2N2907a national

Abstract: 2N2222A TO-92 2N2907A TO-92 2N4401 NATIONAL SEMICONDUCTOR NPN transistor 2N2222A in T0-92 package Transistor 2N2222A transistor 2N3725 2N2904A 2N2905A 2N2907A
Contextual Info: bôE T> m bS 0 1 1 3 G □DB'iSe'i c m NATL S E M I C O N D Devices VtEOtsusti Volts Min NPN (ns) Max mA bpE @ l( Mia mA VcE(sat)@lc& (Volts) Max mA mA *T (MHz) Min Package PD (Amt) (mW) @25°C 45 100 150 40 150 0.4 150 15 200 TO-39 600 2N2905A 45 100 150

Contextual Info: CMOS STATIC RAM 64K 8K x 8-BIT IDT7164S IDT7164L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed ad dress/chip se le ct access tim e — M ilitary: 20 /25/3 0/35 /45/55/7 0/85 ns (m ax.) — C om m ercia l: 15/2 0/25 /30/35ns (m ax.)

Contextual Info: 4TE 3> • Söbfl4Sb Ü O D im 474 H H MHS ^ 6 - Z 3 - / Z - nllll H w l l S B MATRA September 1990 M H S HM 65764 DATASHEET 8 k X8 HIGH SPEED CMOS SRAM FEATURES . ■ . . ■ FAST ACCESS TIME INDUSTRIAL/MILITARY : 35/45/55 ns max COMMERCIAL : 15*/20/25/35/45/55 ns (max)

Contextual Info: CMOS STATIC RAM 64K 64K x 1-BIT IDT7187S IDT7187L Integrated Device T echnology, Inc. FEATURES: DESCRIPTION: • High speed (equal acce ss and cycle tim e) — M ilitary: 20/25/3 5/45 /55/70/8 5ns (m ax.) — C om m ercia l: 15/20/25/35ns (m ax.) • Low po w e r consum ption

2609 al

Abstract: KT 708 459 MARKING sot89 powerex ks powerex kt THYRISTOR br 403
Contextual Info: POUEREX INC TID D • TS^MbSl ODDlflfiO 5 m Thyristor Assemblies-Water Cooled Assembly Module Type PTL6T620_ 15 _ 20 _30 PTL6T625_ 25 _30 _40 PTL7T720 _ 35 _ 45 _ 55 PTL7T7S0_55 _ 65 _ 75 PTL9T9G0_ 08 — — 10 _12

stps3045ct

Abstract: STPS3045CW
Contextual Info: STPS3045CT/CG/CP/C Pl/CW _POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS If a v 2 x 15 A V rrm 45 V Tj (max) 175 °C VF 0.57 V M A1 • A2< FEATURES AND BENEFITS ■ VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES

Contextual Info: SGS-THOMSON M 0 » I L » m TJÌ MK6116, MKI6116, MK6116L, MKI6116L N/S -15/20/25 2K x 8 CMOS STATIC RAM Data Sheet a BYTEWYDE 2K X 8 CMOS STATIC RAM □ 45 VOLT ONLY WRITE/READ □ 24-PIN 600 MIL PLASTIC DIP, JEDEC PINOUT 28-PIN 330 MIL SOIC □ EQUAL WRITE AND READ CYCLE TIMES

Contextual Info: 8LT Series MIL-DTL-38999 Series I Rack and Panel - Dimensions Equipment receptacle type 27 A 45° 2. 05 ax M Shells 11 13 15 17 19 21 23 25 A Max 15.33 16.92 18.51 20.1 22.67 24.26 25.84 27.43 B Max 32.16 35.34 38.51 41.69 46.43 49.64 52.78 C C 25.55 30.3 33.45 36.65 39.8

Contextual Info: Electrical Characteristics Ta=25°C, Unless Otherwise Specified Maximum Ratings Type No. BF496 BF959 BSY95A CC337 VCBO VCEO ^EBO (W) (A) (V) (V) (V) Min Min Min @Tc=25°< 30 30 20 50 20 20 15 45 3 3 5 5 0.3 'cBO ^CB *CES ^CE e (V) m (V) W Max Max 0.02 0.5

LN2162C68

Contextual Info: y - f LED Surface Mounting Chip LED GW Bi-Color Type T y p e No. L ig h tin g C o lo r LN 2162C 68— T R M Ìè £ flt:*:5 È Ì& Absolute Maximum Ratings (Ta=25°C) L ig h tin g Color P,(rmWi 1 -(m A ) I f p im A ) * P u re Green 45 15 60 3 -2 5 —

Contextual Info: S7E D • 345T325 bOb « F G R S DO-15 F- 126 58 A Plastic Dimensions in mm. e q03 oo Si Q1 m . ti_ - t Voltage 1.000 V. 8 Current 1.5 A. at 45°C. • Fast Recovery Diodes Mountir g instructions • Diffused junction 1. Min. c istance from b o d y to soldering p oint,

QMK-34-15

Abstract: c 5763 QMF-234
Contextual Info: I&Q DEMODULATORS F i a t Pa c k M o d e l s FREQUENCY MHz LO RF 19-21 28.5-31.5 38-42 57-63 67.5-73.5 10-30 15-45 20-60 30-90 35-105 80-160 100-200 810-830 869-894 935-960 80-160 100-200 810-630 8694394 936-960 LO LEVEL CONVERSION (dBm) LO S S * (dB) IF

BA1440

Abstract: TBA1440 440n
Contextual Info: ELECTRICAL CHARACTERISTICS PA RA M E T ER 10.5 TYP MAX 15 16.5 40 45 V mA V 110 V- -| —D C /R -|4=0 7.9 8.2 8.5 V V 11 V^*| — DC/R-| 4 = st 5.4 5.8 6.2 V v 120 V 1 2 — DC/ R 1 4 = 0 2.4 2.8 3.0 V v 12 V-j 2 —DC/ R-|4 = o° 1.25 1.6 1.8 V Threshold for sync, level

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

F16 - 100 HIP

Abstract: 65664A
Contextual Info: Tem ic HM 65664A S e m i c o n d u c t o r s 8 K X 8 Very Low Power CMOS SRAM Introduction The HM 65664A is a very low pow er CM O S static RAM organized as 8192 x 8 bit. It is m anufactured using the TEM IC high perform ance CM O S technology nam ed super CM OS.

bu 25200

Abstract: bn 033 AA0307 AA0512 axial inductor AA051 R22MS bu+25200
Contextual Info: Untitled Document AXIAL INDUCTOR AA0307 SERIES Configuration & Dimension: m/m Series AA0307 A 3.0 B +0 7.5 +0 C(ref.) W•• 61.0 0.05 Schematic Diagram: Materials: a. Core : Ferrite DR core b. Wire : Enamelled copper wire c. Lead : Tinned copper wire d. Coating : Epoxy resin

BC147B

Abstract: BC148B BC147A BC149B BC148A BC149C BC148C BC148 BC157A BC158B
Contextual Info: ADVANI OERLIKON/ SEMICOND / 3bE ]> B OSblbMÖ O O O O D I O M M S E LI A s i l ic o n t r a n s i s t o r s NPN ‘ PNP Po =0.25W gTa«2B°C Caso: SOT-25 JBC147 BC147A >' BC147B < BC148 BC148A £ BC148B BC148C 080149 , BC149B /•BC149C f BC157 Vr BC157A , BC157B

16x4

Abstract: 16384x1 ram
Contextual Info: Bipolar Memory Bipolar Memory RAM Functional Index and Selection Guide Part Number RAM B IP O L A R E C L R A M A c c e s s Tim e Iee C O M ’ L/M IL C O M ’L/M IL O rganization Max Max ECL Serie« Number o f P in s Packages -1 5 0 /-1 6 5 10K 16 d ,p ,f ,l

IMS-944

Contextual Info: IMAGE REJECT MIXERS S UREA c e - M o t. ;.v y ’ M FREQUENCY MHz LO LEVEL (dBm) o duls CONVERSION LOSS (dB) IMAGE REJECTION (dB) VSWR INPUT 1 dB COMP. PT. (dBm) INPUT IP, (dBm) ISOLATION (dB) LO/RF TYP/MIN PACKAGE PIN-OUT (See Below) LO/IF TYP/MIN MODEL

Contextual Info: L O GI C D E V I CE S / INC IbE D SSbSTOS ODGBSSb b 16Kx 4 Static RAM L 7 C 1 6 4 / 1 6 5 / 1 6 6 T-V é -Z3-IO Features Description □ 16K by 4 Static RAM with common I/O The L7C164, L7C165, and L7C166 are high-performance, low-power CMOS static RAMs. The storage cells are

GK 052

Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 6 GHz FREQUENCY MHz MODEL NO. LO/RF IF fL-fU =JMS ASK-KK81 +7 dBm LO, up to +1 dBm RF CONVERSION LOSS dB LO-RF ISOLATION dB =RMS = LRMS-J IP3@ E LO-IF ISOLATION dB Total Mid-Band Range m L M U L M U σ Max. Max. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. Min.

MCL ask-2

Contextual Info: FREQUENCY MIXERS Surface Mount LEVEL 7 150 kHz to 6 GHz MHz MODEL NO. LO/RF LO-RF ISOLATION dB fL-fU =RMS = LRMS-J IP3@ E LO-IF ISOLATION dB center f band a Total c Mid-Band Typ. t Range m dBm o L M U L M U – r σ Max. Max. Typ. Min. Typ. Min. Typ. Min.

Contextual Info: FREQUENCY MIXERS Coaxial LEVEL 7 500 Hz to 10 GHz ZLW ZP ZMX ZAD +7 dBm LO, up to +1 dBm RF FREQUENCY MHz MODEL NO. ZMX-7GR ZMX-10G ✝ ZP-1 ZP-2 ZP-3 ZP-5 LO/RF IF fL-fU 3700-7000 DC-1000 3700-10000 DC-2000 CONVERSION LOSS dB Mid-Band m σ Max. x Total Range