4450 MOSFET Search Results

240v n-channel depletion mosfet

Abstract: idec zener barrier zener diode application transistor t13 ZENER DIODE t2 schematics switched power supply ac dc bridge 3417 npn transistor t12 BSS159 fet N-Channel transistor 250V DS
Contextual Info: ICs for Communications Analog Network Interface Circuit ANIC PSB 4450 Version 1.2 PSB 4451 Version 1.2 Understanding The External Components of The ANIC Chipset Application Note 10.99 PSB 4450 Revision History: Current Version: 10.99 Previous Version: N.A:

Contextual Info: lO M fiR D T Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S l l O i t F O r iT I D d t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, T, = 25°C

CHM4450JGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHM4450JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 7.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. SO-8

SML30B48

Abstract: TO-247 Package
Contextual Info: SML30B48 TO–247AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177)

Contextual Info: APT30M70BVR A dvanced P o w er Te c h n o l o g y 300V 48A 0.070Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

75 LS 541

Contextual Info: APT30M70BVFR A dvanced P o w er Te c h n o lo g y ' 300V POWER MOS V 48A 0.0701 i FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

Contextual Info: APT30M70BVFR A dvanced P o w er Te c h n o l o g y 300V POWER MOS V i 48A 0.070Í2 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

sml30m70bvr

Contextual Info: Illl Vrr r = mi SEM E SML30M70BVR LAB 5TH GENERATION MOSFET TO -247AD Package Outline. Dim ensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 4.69 (0 . 185) 1 5.31 (0 .2 09) 1.49 (0 .05 9 ) . 6 1 3.55 (0 . 140) 3.81 (0 . 150) VDSS

BO 615 DIODE

Abstract: E 212 JFET
Contextual Info: A d v a n c ed P o w er Tec h n o lo g y ' APT30M70BVR 300V 48A 0.070Í2 POWER MOS V Power MOS V is a new generation of high voltage N-Channe! enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

STSJ100NH3LL

Contextual Info: STSJ100NH3LL N-CHANNEL 30V - 0.0027 Ω - 100A PowerSO-8 STripFET™ III POWER MOSFET FOR DC-DC CONVERSION PRELIMINARY DATA TYPE STSJ100NH3LL • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.0035 Ω 100 A TYPICAL RDS(on) = 0.0027 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V

00027A

Abstract: STS25NH3LL
Contextual Info: STS25NH3LL N-CHANNEL 30V - 0.0027Ω - 25A SO-8 STripFET III MOSFET FOR DC-DC CONVERSION PRELIMINARY DATA TYPE VDSS RDS on ID STS25NH3LL 30 V < 0.0035Ω 25 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.0027Ω OPTIMAL RDS(ON) x Qg TRADE-OFF @4.5V CONDUCTION LOSSES REDUCED

sts25nh3ll

Contextual Info: STS25NH3LL N-CHANNEL 30V - 0.0032 Ω - 25A SO-8 STripFET III MOSFET FOR DC-DC CONVERSION TYPE STS25NH3LL • ■ ■ ■ VDSS RDS on ID 30 V <0.0035 Ω 25 A TYPICAL RDS(on) = 0.0032 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED

STS25NH3LL

Contextual Info: STS25NH3LL N-CHANNEL 30V - 0.0032 Ω - 25A SO-8 STripFET III MOSFET FOR DC-DC CONVERSION TYPE STS25NH3LL • ■ ■ ■ VDSS RDS on ID 30 V <0.0035 Ω 25 A TYPICAL RDS(on) = 0.0032 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED

25H3LL

Abstract: STS25NH3LL JESD97
Contextual Info: STS25NH3LL N-channel 30 V - 0.0032 Ω - 25 A - SO-8 STripFET III Power MOSFET for DC/DC conversion Features Type VDSS STS25NH3LL 30 V RDS on ID <0.0035 Ω 25 A (1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade off @ 4.5 V

Contextual Info: STSJ100NH3LL N-CHANNEL 30V - 0.0027 Ω - 100A PowerSO-8 STripFET III POWER MOSFET FOR DC-DC CONVERSION PRELIMINARY DATA TYPE STSJ100NH3LL • ■ ■ ■ ■ VDSS R DS on ID 30 V <0.0035 Ω 100 A TYPICAL RDS(on) = 0.0027 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V

Contextual Info: STS25NH3LL N-CHANNEL 30V - 0.0027Ω - 25A SO-8 STripFET III MOSFET FOR DC-DC CONVERSION PRELIMINARY DATA TYPE VDSS RDS on ID STS25NH3LL 30 V < 0.0035Ω 25 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.0027Ω OPTIMAL RDS(ON) x Qg TRADE-OFF @4.5V CONDUCTION LOSSES REDUCED

Contextual Info: AP95T08GP Preliminary Advanced Power Electronics Corp. Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS D RDS ON Lower On-resistance Fast Switching Characteristic ID G RoHS Compliant 80V 7m 80A S Description The Advanced Power MOSFETs from APEC provide the designer with

AP95T08GP

Contextual Info: AP95T08GP Preliminary Advanced Power Electronics Corp. ▼ Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ Lower On-resistance ▼ Fast Switching Characteristic 80V RDS ON 7mΩ ID G ▼ RoHS Compliant BVDSS 80A S Description The Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: STSJ100NH3LL N-CHANNEL 30 V - 0.0027 Ω - 100 A PowerSO-8 STripFET™ III MOSFET FOR DC-DC CONVERSION PRELIMINARY DATA Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STSJ100NH3LL 30 V < 0.0035 Ω 100 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.0027 Ω @ 10V

Contextual Info: MITSUBISHI Pch POWER MOSFET FX30SMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm .4.5. 15.9 max 1.5 S S < >3.2 hf 4 T Î © 5.45 0.6 T P1 T • 4 V D R IV E •V dss .-1 0 0 V

nt 6600 G

Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
Contextual Info: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700

S25NH3LL

Abstract: STS25NH3LL MOSFET SO-8
Contextual Info: STS25NH3LL N-CHANNEL 30V - 0.0032 Ω - 25A SO-8 STripFET III MOSFET FOR DC-DC CONVERSION TYPE STS25NH3LL • ■ ■ ■ VDSS RDS on ID 30 V <0.0035 Ω 25 A TYPICAL RDS(on) = 0.0032 Ω @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED

Contextual Info: STSJ100NH3LL N-CHANNEL 30 V - 0.0027 Ω - 100 A PowerSO-8 STripFET™ III MOSFET FOR DC-DC CONVERSION PRELIMINARY DATA Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID STSJ100NH3LL 30 V < 0.0035 Ω 100 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.0027 Ω @ 10V

Contextual Info: STD110NH02L N-CHANNEL 20V - 0.004 Ω - 80A DPAK STripFET III POWER MOSFET TYPE STD110NH02L • ■ ■ ■ ■ ■ VDSS R DS on ID 20 V < 0.005 Ω 80 A(#) TYPICAL RDS(on) = 0.004 Ω @ 10 V RDS(ON) * Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED