4435sc
Abstract: WTK4435 Mos-Fet 4435SC mosfet 4435sc le1d
Contextual Info: WTK4435 Surface Mount P-Channel Enhancement Mode MOSFET 7 6 D 3 D S 8 S 2 D S 1 P b Lead Pb -Free DRAIN CURRENT -8 AMPERES DRAIN SOURCE VOLTAGE 5 D 4 G -30 VOLTAGE Features: * Super high dense * Cell design for low RDS(ON) * RDS(ON)<20mΩ@VGS = -10V * RDS(ON)<35mΩ@VGS = -4.5V
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4435SC
Abstract: Mos-Fet 4435SC C391Q8 mosfet 4435sc
Contextual Info: CYStech Electronics Corp. Spec. No. : C391Q8 Issued Date : 2007.06.08 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4435Q8 Description The MTP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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4435SC
Abstract: Mos-Fet 4435SC mosfet 4435sc SSG4435 SOP8 Package MOSFET 30v sop-8 diode 8A 400 V DSASW0059405 mar 620
Contextual Info: SSG4435 -8A, -30V, RDS ON 20m P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4435 provide the designer with the best combination of fast switching, ruggedized device design, low
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ssg44354435sc01-mar-2011mos-fet 4435sc+6mosfet 4435scsop8 packagemosfet 30v sop-8diode 8a 400 vdsasw0059405mar 620
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Mos-Fet 4435SC
Abstract: 4435SC 4435* mos mosfet 4435sc SSG4435
Contextual Info: SSG4435 -8A, -30V,RDS ON 20mΩ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.19 0.25 0.40 0.90 The SSG4435 provide the designer with the best Combination of fast switching, 45 o 0.375 REF 6.20
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ssg443527typ01-jun-2002mos-fet 4435sc+34435sc4435* mosmosfet 4435sc
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4435sc
Abstract: Mos-Fet 4435SC MEP4435Q8 C391Q8 mosfet 4435sc
Contextual Info: CYStech Electronics Corp. Spec. No. : C391Q8-A Issued Date : 2008.07.17 Revised Date : Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MEP4435Q8 Description The MEP4435Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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