4435* MOS Search Results

4435 mosfet

Abstract: Mi 4435 MOSFET 4435 APM4435 4435 so8 4435D 4435 B Mos-Fet apm4435 4435 marking 4435
Contextual Info: APM4435 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON = 16mΩ(typ.) @ VGS = -10V S 1 8 D Super High Density Cell Design S 2 7 D Reliable and Rugged S 3 6 D SO-8 Package G 4 5 D RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • •

4435 mosfet

Abstract: Mi 4435 MOSFET 4435 4435 MARKING CODE 4435 marking 4435 APM4435K STD-020C 4435 m
Contextual Info: APM4435K P-Channel Enhancement Mode MOSFET Pin Description Features • -30V/-8A , D RDS ON =16mΩ(typ.) @ VGS=-10V RDS(ON)=24mΩ(typ.) @ VGS=-4.5V • • • Reliable and Rugged • Lead Free Available (RoHS Compliant) D D D S Super High Dense Cell Design

tic 2260

Abstract: FDS4435 CBVK741B019 F63TNR L86Z
Contextual Info: FAIRCHILD S E M IC O N D U C T O R October 1998 tm FDS4435 Single P-Channel, Logic Level, PowerTrench General Description MOSFET Features This P-Channel Logic Level M OSFET is produced using Fairchild Sem iconductor's advanced PowerTrench process that has been especially tailored to minimize

4435 mosfet

Contextual Info: MOSFET SMD Type P-Channel MOSFET SI4435DY SOP-8 • Features ● VDS=-30V ● RDS on =0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V S G S 1 8 D S 2 7 D S 3 6 D G 4 5 D D Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage

4435 mosfet

Abstract: APM2014 4410 mosfet MOSFET 4420 4435* mos 4435 sc MOSFET 4435 9935 mosfet ANPEC APM2310
Contextual Info: www.anpec.com.tw ANPEC MOSFET Product Anpec Always Around Prepared By Tim Shiue TEL : 886-3-564-2000 Ext 250 Date : Aug. 12th, 2005 1 大綱 www.anpec.com.tw • Anpec 技術發展 • Anpec MOSFET • 新產品開發方向 2 Anpec MOSFET技術發展 MOSFET技術發展

NTC 50-11

Abstract: smd 3258 SMD 4435 4435 smd 1 307 329 082 thermistor NTC 50-11 4150K smd 1608 3670K K 3264
Contextual Info: NTC Thermistor SMD DESCRIPTION The LNS series is manganese oxide based NTC thermistor, which shows non-linear resistance-temperature behavior. Multilayered structure has as high reliability as monoblock type, even without protective glass coating, since the active electrode

motorola 68hc705 programming guide

Abstract: 68HC12 microcontroller electronic stethoscope circuit diagram HMI-200 Telefunken supertap emulator 68302 installation guide M68HC11-F mc68hc11evb tag 8944 semiconductors cross index
Contextual Info: 1999 MOTOROLA MICROCONTROLLER DEVELOPMENT TOOLS DIRECTORY Design Support for the M68HCO5, M68HCO8, M68HC11, M68HC12, M68HC16, M68300, and MPC500 Families 1999 Edition 1999 Motorola, Inc All Rights Reserved Table of Contents MOTOROLA Table of Contents Development Tools Index by

Contextual Info: APT10045JFLL 1000V 21A 0.450W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package

Contextual Info: •I iT ! 43D5271 H A R G0S414D R DES IS HAS IRFF130/131/13 2/133 IRFF130R/131 R /132R/133R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features TO -2 0 5 A F • 7.0A and 8.0A, 80V - 100V • rDS on = 0.18 fl and 0 .2 5 fi • Single Pulse Avalanche Energy Rated*

4433 mosfet

Abstract: 4435 mosfet mosfet 4433 AALN IRFF131
Contextual Info: 2 HARRIS IR FF1 30/131/132/133 IR F F 1 3 0 R /1 31 R /1 3 2 R /1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A ugust 1991 Features • Package T0205A F 7 .0 A a n d 8 .0 A , 8 0 V - 1 0 0 V • r D S (o n = 0 . 1 8 f t a n d 0 .2 5 f t • S in g le P u lse A v a la n c h e E n e rg y R a te d *

SIEMENS SIMATIC NET PROFIBUS FC 6XV1 830-0EH10

Abstract: Siemens S7 400 4211BL01-0AA0 6ES7 414-2XK05-0AB0 414-3XM05-0AB0 6ES7 960-1AA04-5AA0 6es7 422 X204-2 421-1BL01-0AA0 siemens siplus
Contextual Info: 6 Siemens AG 2013 SIMATIC S7-400 6/2 Introduction 6/4 6/4 6/4 6/8 6/13 6/18 6/21 6/21 6/22 6/23 6/25 6/26 6/26 6/30 6/35 6/35 6/35 6/35 6/35 6/41 6/55 Central processing units Standard CPUs CPU 412 CPU 414 CPU 416 CPU 417 SIPLUS Standard CPUs SIPLUS CPU 412

MN56020

Abstract: QFP40 MN56030 mn53000 S8480 QFP-40 mn5504 N530 I/MN56050
Contextual Info: • CMOS Gate Arrays •S eries Lineup Delay Time * Series Features Low gate, Few pin package MN53000 1.4ns V d d “ 5V MN55000 Fixed ROM/RAM built-in (RAM 2Kbit, 4Kbit) MN56000 Standard channel type gate array Sea-of-gate, Optional bit, Word RAM/ROM possible, RAM 16Kbit max., ROM 64Kbit max.

4435 m

Abstract: USB Expands
Contextual Info: Universal Serial Bus New products. New customers. And new methods of marketing. Explore a whole new world of opportunities with USB Anything. Anytime. Anyone. Market-building with USB: overcoming the barriers Adding new peripherals to their desktop PC is a frightening experience for many users. The very thought of configuring add-in cards with dip switches, jumper cables, software drivers,

ablebond epoxy

Abstract: NKD-100-D 84-1LMI
Contextual Info: NKD-100-D  0,//,0 7(5:$9( 5(48(1&< '28%/(5 00,& *+] 72 *+] 7\SLFDO $SSOLFDWLRQV • Narrow and Broadband Commercial and Military Radio Designs • Upconversion Stage used in MW Radio/ Optical Designs • Linear and Saturated Radio Applications GENERAL PURPOSE

Contextual Info: RFD3055, RFD3055SM, RFP3055 Semiconductor Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs File Number 3648.2 Features • 12A, 60V These are N-Channel enhancem ent mode silicon gate • rDS ON = 0.150i2 power field effect transistors. They are advanced power

FD3055

Abstract: Fp3055 IS433 4078 relay RFP3055 TB334 AN7254 RFD3055 RFD3055SM RFD3055SM9A
Contextual Info: RFD3055, RFD3055SM, RFP3055 Data Sheet July 1999 12A, 60V, 0.150 Ohm, N-Channel Power MOSFETs • 12A, 60V Formerly developmental type TA49082. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

Ericsson TN R4

Abstract: Mi 4435
Contextual Info: ERICSSON ^ Preliminary April 1997 PBR 522 01/1 LPM Line Protection Module Description The Line Protection Module LPM PBR 522 01/1 consists of a ratio matched line resistor pair including thermistors (PTC's) and two ringtrip/ringfeed resistors on a ceramic substrate. PBR 522 01/1 is used in telephone line interface overvoltage

ericsson

Contextual Info: Preliminary April 1997 PBR 522 01/1 LPM Line Protection Module Description Key Features The Line Protection Module LPM PBR 522 01/1 consists of a ratio matched line resistor pair including thermistors (PTC´s) and two ringtrip/ringfeed resistors on a ceramic substrate. PBR 522 01/1 is used in telephone line interface overvoltage

Contextual Info: WA60 WORLDWIDE W A G O Com panies and Representations Argentina AEA S.A.C.I.F. Asuncion 2130 1419 Buenos Aires Phone +54/11 /45741555 Fax +54/11/45742400 Australia Finland Italy M ODIO O Y Pulttitie 2 A 00880 Helsinki Phone +358-9-7744 060 Fax +358-9-7744 0660

8 pin 4435 ic voltage out and in

Abstract: 4435 mosfet
Contextual Info: ANP012 Application Note AP2004 Buck Controller Contents 1. AP2004 Specification 1.1 Features 1.2 1.3 1.4 1.5 General Description Pin Assignments Pin Descriptions Block Diagram 1.6 Absolute Maximum Ratings 2. Hardware 2.1 Introduction 2.2 2.3 2.4 2.5 Typical Application

B540A

Abstract: 8 pin 4435 ic voltage out and in ost rlx capacitor 4435 ic OST 1000uf capacitor 4435 mosfet rlx series B540A diode 4435 fairchild ANP012
Contextual Info: ANP012 Application Note AP2004 Buck Controller Contents 1. AP2004 Specifications 1.1 Features 1.2 General Description 1.3 Pin Assignments 1.4 Pin Descriptions 1.5 Block Diagram 1.6 Absolute Maximum Ratings 2. Hardware 2.1 2.2 2.3 2.4 2.5 3. Introduction Typical Application

la 7630

Contextual Info: W A G O Companies and Representations A rg e n tin a Fin la n d Ita ly Sin g a p o re AEA S.A.C.I.F. Asuncion 2130 1419 Buenos Aires Phone + + 5 4 / 1 1 /45741555 Fax + + 5 4 / 1 1 /4574 2400 MODIO OY Pulttitie 2 A 00880 Helsinki Phone + + 3 5 8 -9 -7 7 4 4 060

transistor pcr 406

Abstract: 4435 transistor so-8 PCR 406 TRANSISTOR smd TRANSISTOR 1D AIC1578CS 4435 mosfet 4435 SO-8 470f 10 SMD 4435 SMD Transistor 1F
Contextual Info: AN99-001 High Efficiency LCD Monitor Power Design Using AIC1578 Michael Huang DESCRIPTION are ideal for portable equipment. The AIC1578 is a high performance step-down In order to maintain good conversion efficiency DC/DC converter, designed to drive an external

4435 transistor so-8

Abstract: 4435 mosfet AN007 4435 SO-8 SMD 4435 PCR 406 TRANSISTOR smd transistor 513 4435 smd transistor pcr 406 4435* mos
Contextual Info: AN007 High Efficiency LCD Monitor Power Design Using AIC1578 DESCRIPTION are ideal for portable equipment. The AIC1578 is a high performance step-down In order to maintain good conversion efficiency DC/DC converter, designed to drive an external form light loads to full loads, the AIC1578 uses the