4425 B Search Results

Contextual Info: MIC4423/4424/4425 3A Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC 4423/4424/4425 fam ily of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 fam ily of

pin voltage tl494

Contextual Info: MIC4423/4424/4425 Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 family are highly reliable BiCMOS/ DMOSbuffer/driver/MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428, which are

Contextual Info: MIC4423/4424/4425 Dual 3A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 family of

MIC4424CN

Contextual Info: MIC4423/4424/4425 Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General D escription Features The MIC4423/4424/4425 family are highly reliable BiCMOS/ DMOSbuffer/driver/MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428, which are

ic4424

Abstract: 5962-8850305PX
Contextual Info: MIC4423/4424/4425 Dual 3A Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 fam ily of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new M IC4426 fam ily of

4424 ym

Abstract: MIC4423AJBQ MIC4424CN
Contextual Info: IEH e L MIC4423/4424/4425 Dual 3A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The MIC4423/4424/4425 family of parts are CMOS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 family of

MIC4424AJ

Abstract: 74Cxxx MIC4425AJ tl494 equivalent mic4423aj IC4424 5962-8850305PX
Contextual Info: MIC4423/4424/4425 3A Dual High Speed MOSFET Driver Bipolar/CMOS/DMOS Process General Description Features The M IC 4423/4424/4425 fam ily of parts are CM OS buffer/ drivers built using a highly reliable BCD process. They are higher output current versions of the new MIC4426 fam ily of

Ablebond 789-3

Abstract: 4425 ic 4425 power ic Ablebond k2951 IC Pressure Silicon Sensors ultem epoxy K295 control valve response time 4425
Contextual Info: I C SENSORS INC blE D Microvalve 4b77375 ÜD002M7 3Ü1 • ICR Model 4425 Preliminary Gas Microvalve Normally Closed Low Cost Features Proportional Response Low Power Fast Response Miniature Size 25 psig Operating Pressure PC Board Mountable Typical Applications

TC4425

Abstract: TC4423 TC4423COE TC4424 4425 8-pin mosfet 4423 4425 mosfet mm73a
Contextual Info: 3A DUAL HIGH-SPEED MOSFET DRIVERS TC4423 TC4423 TC4424 TC4424 TC4425 TC4425 3A DUAL HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in

2N2222A plastic package

Abstract: 2N2222A plastic thyristor drive hall sensor 790 1N4004 2N2222A 536 hall
Contextual Info: 4425 Issued November 1980 Hall Effect Vane Switch Instruction Leaflet RS stock no. 309-492 A vane operated hall effect switch consisting of a hall effect sensor and magnet housed in a rugged PCB mounting plastic package. The device operates by sensing the presence of a

ipos 150 3.3

Contextual Info: 19-4425; Rev 1; 5/09 KIT ATION EVALU LE B A IL A AV Internal-Switch Boost Regulator with High-Voltage Level Shifter for TFT LCDs The MAX17088 includes a high-performance, step-up regulator; a high-speed operational amplifier; a digitally adjustable VCOM calibration device with nonvolatile

Contextual Info: Global Contacts Americas Argentina – Buenos Aires Phone: +54-11-4733-2200 Fax: +54-11-4733-2211 Brasil – São Paulo Phone: +55-11-2103-6000 +55-11-2103-6030 Fax: Canada – Toronto Phone: +905-475-6222 +905-474-5520 Fax: Product Information Center: Phone: +905-470-4425

D33D30

Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE fT V C E (S A T ) M in.-Max. @ IC , V C E (V> (V) Max. l c . *B PT Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) 2N 4256 2N4424 2N 4425 N PN

2N4256

Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

transistor d 4515

Abstract: d 4515 0424400 A 4510 D 4510 datasheet 4040 4060 datasheet 040-4620 4055 marking A 4802
Contextual Info: Knob ø 21 mm Knob 18.5 17 Marking a d ø a 3.2 ø 21.3 ø 16.5 ø without line ≤ 4 mm ø 18.5 17 with line grey black matt glossy matt glossy 8,3 – 4 020-4315 020-4310 020-4325 020-4320 10 4,05 6 020-4415 020-4410 020-4425 020-4420 10 3,2 1/4” 020-4515

Contextual Info: l e l u o m Semiconductor, Inc. TC4423 TC4424 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current ver­ sions of the new TC4426/4427/4428 buffer/drivers, which, in turn, are improved versions of the earlier TC426/427/428

"to-98" package

Abstract: 2N5355 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V hFE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N4425

Abstract: 2N4256 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 2n5420
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE fT V CE(SAT) M in.-Max. @ IC , V C E (V> (V) Max. lc . *B PT Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) 2N 4256 2N4424 2N 4425 N PN NPN

2N5355

Abstract: 2N5354 2N4424 2N4256 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V hFE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SA T) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN

SL 100 NPN Transistor base emitter collector

Abstract: D29E6 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N4256

Abstract: 2N4425 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 2N5172
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N 4256 2N4424 2N 4425 N PN

2N4424

Abstract: 2N4425 500ma 40v pnp 2N4256 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 P A C K A G E Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N 4256 2N4424 2N 4425

transistor mosfet 4425

Abstract: HS203F maxwell supercapacitor LTC4425 maxwell supercapacitor balancing circuit LTC4425EDD 48V 20A battery charger LTC4425E 4425BD LT3751
Contextual Info: LTC4425 Linear SuperCap Charger with Current-Limited Ideal Diode and V/I Monitor DESCRIPTION FEATURES n n n n n n n n n n n 50mΩ Ideal Diode from VIN to VOUT Smart Charge Current Profile Limits Inrush Current Internal Cell Balancer No External Resistors

4425

Abstract: LTC3533
Contextual Info: LTC4425 Linear SuperCap Charger with Current-Limited Ideal Diode and V/I Monitor DESCRIPTION FEATURES n n n n n n n n n n n 50mΩ Ideal Diode from VIN to VOUT Smart Charge Current Profile Limits Inrush Current Internal Cell Balancer No External Resistors