433V Search Results

433v4

Contextual Info: Filename: tfs 433v.doc Version 1.1 VI TELEFILTER 24.01.2005 Filter specification TFS 433V 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: * Input: Output: 23 °C dBm 240 Ω | -2,5 pF 240 Ω | -2,5 pF Characteristics

Contextual Info: APT45GR65BSCD10 APT45GR65BSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and

Contextual Info: DIE PRODUCTS BURR-BROW N* E HI-506 DIE 1 Single-Ended 16-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p • NO CHANNEL INTERACTION DURING OVERVOLTAGE • ESD RESISTANT • BREAK-BEFORE-MAKE SWITCHING • ANALOG SIGNAL RANGE: ±15V

Contextual Info: APT45GR65B APT45GR65B 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses.

MGE pulsar cl5

Abstract: MGE pulsar MGE UPS MGE ups systems pulsar cl5 34007303XT-AE pulsar cl conector 250v proteggere una linea telefonica
Contextual Info: Caractéristique / Pulsar CL5 Characteristics Performances Protection surtensions / Surge protection 3 MOV 18 000 A Dissipation Totale d’Energie / Total Energy Dissipation E 555 J Temps de réponse / Response time t < 1 ns Caractéristique / Pulsar CL5 Tel

ZO 607 TRIAC

Abstract: RTCA DO-160 iso 7137 TRIAC zo 607 MA NAS 1149 MS3320 EN3155 Cross Reference Full Line Condensed Catalogue 1977 DIN 72585 a1 4.1 RBS 6302 NAS1149
Contextual Info: Contents Introduction Thermal Overcurrent Circuit Breakers Thermal-Magnetic Overcurrent Circuit Breakers Hydraulic-Magnetic and Magnetic Overcurrent Circuit Breakers High Performance Circuit Breakers and Battery Switches Door Locking, Time Delay and Motor Protection Controls

Contextual Info: AP95GR65B2 APT95GR65B2 650V, 95A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses.

Contextual Info: DIE PRODUCTS BURR-BROW N* HI-507 DIE 1 I Differential 8-Channel CMOS ANALOG MULTIPLEXER DIE FEATURES DESCRIPTION • ANALOG OVERVOLTAGE PROTECTION: 70Vp-p • NO CHANNEL INTERACTION DURING OVERVOLTAGE • ESO RESISTANT • BREAK-BEFORE-MAKE SWITCHING • ANALOG SIGNAL RANGE: ±15V

mosfet 650v

Contextual Info: APT97N65B2C6 APT97N65LC6 650V 97A 0.041Ω APT97N65B2C6 COOLMOS Super Junction MOSFET Power Semiconductors T-Max TO-264 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT97N65LC6 • Extreme dv/dt Rated

APT100DQ60

Contextual Info: APT130N65JC6 650V COOL MOS 130A S S Super Junction MOSFET Po we r Se miconduc tors 0.020Ω • Ultra Low RDS ON D G • Low Miller Capacitance SO 2 T- 27 • Ultra Low Gate Charge, Qg "UL Recognized" • Avalanche Energy Rated file # E145592 IS OTO P • Extreme dv/dt Rated

Contextual Info: APT70GR65B2DU40 APT70GR65B2DU40 650V, 70A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between

Contextual Info: APT95GR65JDU60 APT95GR65JDU60 650V, 95A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode E E The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between

Contextual Info: AP70GR65B2SCD30 APT70GR65B2SCD30 650V, 70A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and switching losses.

Contextual Info: APT45GR65B_SSCD10 APT45GR65BSCD10 APT45GR65SSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and

PTB 00 ATEX 3117

Abstract: CEAG PTB 00 ATEX 3117 ceag ghg atex ceag ghg 411 ceag ghg 412 GHG 412 PTB 99 ATEX CEAG P413 CEAG PTB 00 ATEX 1040 ATEX 3117
Contextual Info: Betriebsanleitung Explosionsgeschützte Steuergeräte GHG 411 und GHG 412 Operating instructions Explosion-protected control units GHG 411 and GHG 412 Mode d’emploi Boites de commande GHG 411 et GHG 412 pour atmosphères explosives GHG 410 7001 P0001 D/E/F I

Magnetic Field Sensor FLC 100

Abstract: CL02A400T MC1A310AT g85 wafer 12 volt electronic ballast for xenon light RJ45-B act ge 106 18p IEC61009-1 gec switchgear DDICE60
Contextual Info: Product Catalogue 2013 Circuit Breakers Contactors & Overloads Motor Protection Photovoltaic Fusegear Weatherproof Switchgear Isolators & Switching Relays & Timers Pilot Devices Metering Enclosures Cable Accessories Surge & Safety Lighting CONTENTS: IPD Industrial Products is a proudly Australian owned

Contextual Info: APT45GR65B2DU30 APT45GR65B2DU30 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT with Ultra Soft Recovery Diode The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between

Contextual Info: APT45GR65B_S APT45GR65B APT45GR65S 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and

Contextual Info: APT97N65B2C6 APT97N65LC6 650V 97A 0.041 APT97N65B2C6 COOLMOS Super Junction MOSFET Power Semiconductors T-Max TO-264 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT97N65LC6 • Extremedv/dt Rated