431 TRANSISTOR IC Search Results

2-7D101A

Abstract: 2SA1431
Contextual Info: TOSHIBA 2SA1431 2 S A 1 431 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm STOROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain and Excellent hEE Linearity : hFE(1) = 100-320(VCe = -2 V , IC= -0.5A)

29Z3

Abstract: Transistor CODE FR m7am
Contextual Info: 55C D • SIEG flSBSbOS 000*431^ 1 BCY67 PNP Silicon PlanarTransistor SIEMENS AKTIENGESELLSCHAFT 04319 7^ O Z- 3 BCY 6 7 is an epitaxial PNP silicon planar transistor in TO 18 case 18 A 3 DIN 4 1 8 7 6 . The collector is electrically connected to the case. The transistor is particularly provided

transistor w 431

Abstract: a 431 transistor transistor 431 c n 431 transistor a 103 m Transistor y 431 transistor transistor 431 N transistor 431 Transistor Arrays transistor 431 a
Contextual Info: CONTENTS [1 ] INDEX . 7 IFD FAM ILY TREE . TD/TB62 SERIES . TRANSISTOR ARRAY SELECTION GUIDE .

Transistor PJ 431

Abstract: T0-204MA PLA relay 2 c/o -MCC-12D-5A-WB PTC430 transistor w 431 h a 431 transistor PLA relay 1 c/o -MCC-12D-5A-WB
Contextual Info: 6115950 MICROSEMI CORP/POWER 71C 71 00322 p r - J J . r ? DE I h l l S T S O 0000325 1 | Series PTC 430, PTC 401 HighVoltoge NPN Transistors 7 Amperes • 400 Volts FEATURES • High Voltage Rating —400 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue

transistor sl 431

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC4245 U n it in m m TV TUNER, UHF M IXER A PPLICATIO NS. V H F -U H F BAND RF AM PLIFIER APPLICATIO NS. M AXIM UM RATINGS Ta = 25°C CHARA CTERISTIC SYMBOL RATING U N IT VCBO VCEO Ve b o ic Ib I’C 30 15 3

transistor tt 2222

Abstract: TT 2222 C9011 sot289 TT 2222 npn TZ77 transistor scans sheet high power npn UHF transistor BLV58 IJBA970
Contextual Info: Philips Semiconductors • 7 1 1 0 6 2b P O b ER b l bME ■ P HIN ^^Productspecifica«^ UHF linear push-pull power _ transistor ph ilips international FEA TU RES • High power gain d Q U IC K R E F E R E N C E DATA R F performance at T h = 25 CC in a common emitter test circuit.

ULN2003APG china

Abstract: TPD1047F TC7600FNG ULN2003APG TPD1042 ULN2003APG IC CONNECTION NPN DARLINGTON TRANSISTOR ARRAY ULN2803APG toshiba tb6560 TB6584FNG
Contextual Info: SEMICONDUCTOR GENERAL CATALOG General-Purpose Linear ICs Operational Amplifier ICs Op Amp ICs & Comparator ICs Intelligent Power Devices (IPDs) Interface Drivers Motor Drivers Power Supply ICs 1 2009-8 SCE0004I Operational Amplifier ICs (Op Amp ICs) & Comparator ICs

Contextual Info: P h ilip s Sem ico n d u cto rs • bhSBTBl 003D2T3 STS BBAPX _ P re lim in ary sp e cifica tio n VHF amplifier module BGY145B N AMER PHILIPS/DISCRETE DESCRIPTIO N b'lE D _ _ PIN N IN G-SOT183A The BGY145B is a R F amplifier module, designed for use in

RCA 40250 transistor

Abstract: audio amplifier with rca 410 Transistor rca 40250 RCA 40622 transistor RCA H 410 2n3772 complement RCA 40250 2n3441 complement RCA 2N3055 transistor 40629 Transistor
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

h a 431 transistor

Abstract: DARLINGTON ESM 30 diode ESM 5045D ESM5045D 431E ESM5045DV
Contextual Info: PH I L I P S INTERNATIONAL 4SE D E3 711002b 0D31237 J 7 SPHIN ESM5045D V T -3 3 ~ 2 ? SILICON DARLINGTON POWER TRANSISTORS NPN high-current switching Darlington transistor in ISOTOP package, intended fo r use in m otor drives, converters, switch mode power supplies (SMPS) and uninterruptable power supplies (UPS).

OPTO tl431

Abstract: loop control TL431 LINEAR OPTOCOUPLER OPTOCOUPLER SWITCHING POWER SUPPLY U116 IC 431 optocoupler ic DN-32 datasheet IC 431 linear opto coupler
Contextual Info: DN-32 Design Note OPTOCOUPLER FEEDBACK DRIVE TECHNIQUES The use of optocouplers in the feedback path of switchmode power supplies is probably one of the most common practices in the industry. Benefits of this method include low component cost, high voltage isolation and

loop control TL431

Abstract: u116 Unitrode DN photo coupler application note 431 regulator
Contextual Info: DN-32 Design Note OPTOCOUPLER FEEDBACK DRIVE TECHNIQUES The use of optocouplers in the feedback path of switch­ mode power supplies is probably one of the most com­ mon practices in the industry. Benefits of this method include low component cost, high voltage isolation and

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

TA31161FN

Abstract: transistor WL 431 TA31161FN-1
Contextual Info: IF AMP ICs AND I.Q. MODULATOR W ID E-B A N D IF DETECTOR WITH BUILT-IN HIGH-SPEED MIX. FEATURES • A wide-band IF detector integrated circuit capable of operating at 10.7MHz and designed for the high-speed bit rates used in mobile communication and other

2SB206

Abstract: 2SB205 2SB212 2SC1466 2sd206 2SB214 GERMANIUM TRANSISTOR 2SB208 transistor SE 431 2SD208
Contextual Info: C A T .N o .E 309 2SC431 th ru 2SC436 Use • For high-frequency power amplification • For high-frequency power switching Construction • NPN triple diffusion type SHINDENGEN’S silicon power transistors are all outside comparison in perfor­ mance and really epoch-making to realize that even one piece o f element is

GM7130

Abstract: voltage regulator 7130 ml25 KY50VB100 GM7130-3.3TA5 GM7130-3.3TA5T 1N5822 GM7130-ATA5T KY50VB1000-ML25 TC-331M-3A-8026
Contextual Info: A Power Management GM7130 A MICROELECTRONICS 3A STEP-DOWN VOLTAGE SWITCHING REGULATORS Features Description GM7130 of regulators provides all the active functions for a step- down buck switching regulator, and drives 3A load with excellent line and load regulation. GM7130 is available

h a 431 transistor

Abstract: voltage regulator 7130 9426 GM7130 TC-101M-3 1N5822 GM7130-ATA5T TC-221M-3A-8026 TC-101M-3A-5026 KY50VB680-MK30
Contextual Info: GM7130 3A STEP-DOWN VOLTAGE REGULATORS Power Management Features Description 3.3V, 5V, 12V, 15V, Adjustable output versions The GM7130 series of regulators provide all the active functions for a step-down buck switching regulator, and drive 3A load with

BU508A

Abstract: BU508D BY223 philips bu508a bu50ba diode BY223 BU508D transistor dd77473 transistor BU508D BU-508A
Contextual Info: Product specification Philips Semiconductors BU508A; BU508D Silicon diffused power transistors High-voltage, high-speed switching npn transistor in S O T 9 3 A envelope intended fo r use in horizontal deflection circuits o f colour television receivers. The B U 508 D has an integrated efficiency diode.

RCA 40313

Abstract: 40322 RCA 40318 RCA RCA 528 RCA413 2N5415 2n3055 RCA data RCA 40250 RCA 411 2N3439
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

2N3440 2N5416 REPLACEMENT

Abstract: TRANSISTOR REPLACEMENT FOR 2N3053 40620 transistor 2n6308 TRANSISTOR REPLACEMENT Replacement for 2N5322 transistor 2n2102 replacement 300W TRANSISTOR AUDIO AMPLIFIER 2N4036 replacement Transistor PJ 431 40872
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

HIGH POWER DIODE

Abstract: "Power Diode" 500V 20A 132 1506 diode D66DWT273 D66EW1 EW NPN D66DW3 NPN POWER DARLINGTON TRANSISTORS EW1 transistor
Contextual Info: HIGH VOLTAGE D 66D W T2T3 D66EW1,2,3 NPN POWER DARLINGTON VcER = 600-700 VOLTS VcEV = 800-900 VOLTS 50 AMP, 167 WATTS TRANSISTORS The D66DW/EW is a high voltage NPN high current power Darlington especially designed for applications requiring high blocking voltage capability such as: 460VAC line motor

c 4977 transistor

Abstract: UTC 2003 SSC 9500 7107 GP Avantek amplifier UTC transistor 11027 UTC 1098 CA 4977 AVANTEK utc AVANTEK TO-8
Contextual Info: 4 ME D A V A N T E K INC A V A N T n m ' imiSbb OODôOtn Ô BIAVA UTO/UTO 545 Series Thln-Film Cascadable Amplifier 10 to 500 MHz . FEATURES APPLICATIONS • Frequency Range: 10 to 500 MHz • High Dynamic Range • High Output Power; . +19.0 dBm (Typ

znr 471 varistor

Abstract: ZNR 471 ZNR 391 znr3 varistor znr 431 znr 270 ZNR 241 varistor SEC 471 10 znr 621 varistor znr e 471
Contextual Info: “ZNR” Transient/Surge Absorbers Type D “ZNR” Transient/Surge Absorbers Type: Series: D E “ZNR” Transient/Surge Absorber, Series E, Type D features large surge current and energy handling capability for absorbing transient overvoltage in a compact size.