42DBM Search Results

Contextual Info: MMIC AP245 Product Features Application • 300 ~ 3000 MHz • GaAs MMIC • 42dBm Output IP3 • 26dB Gain • 21dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Package : SOIC-8 Description AP245 is a high linearity amplifier designed with GaAs MMIC in a low cost.

Contextual Info: SGN2933-320D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 400W typ. @ Pin=15.8W (42dBm) •High Efficiency: 50%(typ.) @ Pin=15.8W (42dBm) •Broad Band: 2.9 to 3.3GHz • Impedance Matched Zin/Zout = 50 ohm

27 31 GHz HPA

Abstract: EGN21A090IV hpa L-band Paladin-15 digital predistortion dpd 2carrier WCDMA egn21a090
Contextual Info: Eudyna GaN-HEMT 90W Preliminary EGN21A090IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB typ. at Pout=42dBm(Avg.) ・High Efficiency: 35%(typ.) at Pout=42dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz

Contextual Info: Preliminary DS/SGN2731-320D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 320W min. @ Pin=15.8W (42dBm) •High Efficiency: 50%(typ.) @ Pin=15.8W (42dBm) •Broad Band: 2.7 to 3.1GHz • Impedance Matched Zin/Zout = 50 ohm

AN-2235

Abstract: LMH6882EVAL
Contextual Info: LMH6882 DC to 2.4GHz, High Linearity, Dual, Programmable Differential Amplifier General Description The LMH6882 is a high-speed, high-performance programmable differential amplifier. With a bandwidth of 2.4GHz and high linearity of 42dBm OIP3, the LMH6882 is suitable for

Contextual Info: Wideband Power Amplifier Product Features • • • • Operation across 20MHz to 1000MHz 42dBm minimum Psat through all band 35dB typical small signal gain GaN HFET RFW1G35H20-28 Application • HF/VHF/UHF Package : DP-75 Description The RFW1G35H20-28 is designed for Wideband Power Amplifier application frequencies from 20 to 1000MHz.

Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs

RFHIC

Abstract: b880 ap211 AP-211
Contextual Info: MMIC AP211 Product Features Application • 50 ~ 3000 MHz • GaAs MMIC • 42dBm Output IP3 • 13dB Gain • 24dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier Description Package : SOIC-8 AP211 is a high linearity amplifier designed with GaAs MMIC in a low cost.

JESD22-A114

Abstract: Device Innovations
Contextual Info: EGN29B200IV-R High Voltage - High Power GaN-HEMT for Radar FEATURES •High Voltage Operation : VDS=50V •High Power : 200W min. @ Pin=15.8W (42dBm) •High Efficiency: 53%(typ.) @ Pin=15.8W (42dBm) DESCRIPTION Sumitomo GaN-HEMT EGN28B100IV-R offers high power, high

RES65

Contextual Info: LMH6882 DC to 2.4GHz, High Linearity, Dual, Programmable Differential Amplifier General Description The LMH6882 is a high-speed, high-performance programmable differential amplifier. With a bandwidth of 2.4GHz and high linearity of 42dBm OIP3, the LMH6882 is suitable for

FPD2250SOT89

Abstract: FPD2250
Contextual Info: EB2250SOT89BA FPD2250SOT89 1.85GHz EVALUATION BOARD FEATURES Measured Noise Figure 1.00 0.80 N.F. dB • • ¥ ¥ ¥ Measured @ 1.85GHz 29dBm Output Power 14.5dB Gain 42dBm OIP3 Noise Figure 0.7dB Bias 5V, 300mA 0.60 0.40 0.20 N.F.1 (dB) 0.00 N.F.2(dB)

AP176

Abstract: TIA-1000-4
Contextual Info: Coaxial RF Instrument Amplifier 50Ω TIA-1000-4 High Power 100 to 1000 MHz Features • instrument model with built-in power supply, 110V/220V operation • high power output at 3.5dB compression, 42dBm typ. • high reverse isolation, 55 dB typ. • 100% burn-in at +25°C, 48 hrs

Contextual Info: 19-1764; Rev 0; 7/00 Low-Noise, High-Linearity Broadband Amplifier Features ♦ Single-Ended Input, Differential Output ♦ +4.75V to +5.25V Single-Supply Operation ♦ Broadband Operation: 44MHz to 880MHz ♦ Low Noise Figure: 4.2dB ♦ High Linearity: IIP2 42dBm , IIP3(14dBm)

RFDA0016410

Abstract: RFDA0016 1008CS-122XJLC emerson PLC Panasonic PLC
Contextual Info: RFDA0016 RFDA0016Digital Controlled Variable Gain Amp 50 to 1000 MHz, 6 bit 0.5dB LSB Control DIGITAL CONTROLLED VARIABLE GAIN AMP 50 TO 1000MHZ, 6 BIT 0.5DB LSB CONTROL Max Gain=38.5dB at 150MHz  Class 1C HBM ESD Rating  High OIP3=42dBm at 150MHz 

Contextual Info: OPA685 OPA 685 OPA 685 For most current data sheet and other product information, visit www.burr-brown.com Ultra-Wideband, Current-Feedback OPERATIONAL AMPLIFIER With Disable TM FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ●

Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC amplifier. Designed

TGI1414-50L

Contextual Info: MICROWAVE POWER GaN HEMT TGI1414-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA Preliminary FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 14.0GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

Contextual Info: MICROWAVE POWER GaN HEMT TGI1314-50L MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ HIGH POWER Pout=47.0dBm at Pin=42.0dBm „ HIGH GAIN GL=8.0dB at 13.75GHz to 14.5GHz „ BROAD BAND INTERNALLY MATCHED HEMT HERMETICALLY SEALED PACKAGE „ LOW INTERMODULATION DISTORTION

Macom marking code

Abstract: marking code macom
Contextual Info: Preliminary CGA-6618 Product Description Dual CATV 1 MHz to 1000 MHz High Linearity GaAs HBT Amplifier Sirenza Microdevice’s CGA-6618 is a high performance GaAs HBT MMIC Amplifier. Designed with the InGaP process technology for excellent reliability. A Darlington configuration

MAX3507

Abstract: MAX3507EGI MAX filter programmable 5Mhz
Contextual Info: 19-2092; Rev 0; 7/01 Upstream CATV Amplifier with On-Chip Anti-Alias Filter Features ♦ Built-In 5th-Order Elliptic Anti-Aliasing Filter ♦ 5MHz to 65MHz Operation ♦ 55dB Gain Control Range ♦ Optional Positive Slope Generator ♦ 55dB Spurious-Free Dynamic Range Over

lt1750

Abstract: lt1749 J832 140MHz IF demodulator IC capacitor 1.8ghz 100pF 0402 J181 sire transformer 900MHZ LT5503 LT5526
Contextual Info: LT5526 High Linearity, Low Power Downconverting Mixer U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 5526 is a low power broadband mixer optimized for high linearity applications such as point-to-point data transmission, cable infrastructure and wireless infrastructure systems. The device includes an internally matched

601 121

Abstract: FLL800IQ-2C
Contextual Info: FLL800IQ-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 80W Typ. High PAE: 50% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull design that

FLL1500IU-2C

Abstract: eudyna GaAs FET Amplifier
Contextual Info: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that

2SC300

Abstract: 2SC3006 2sc2988 630-R 630RF
Contextual Info: A È ; Jf! t; § I • 2 SC 2 9 5 1 ffliÉ : 4— 12GHz 0» S ÌÌI* ffl 630mW Vcc=12V, f=7. 5 Sfattiti GHz : FM M u f f i i •2 S C 2 9 8 8 f é T 440 flFE fr(GH z) Cob(pF) Tj (°C) 200 I c bo (M ) hFE • 2 SC 2 9 9 1 08 T O : VHF S T O i f l B , H S W S S f f lo