4236 PA Search Results

pj 57 diode

Abstract: 2SJ266
Contextual Info: Ordering number : EN 4236 2SJ266 No.4236 P-Channel MOS Silicon FET SANYO i Very High-Speed Switching Applications F eatures • Low ON resistance. - Very high-speed switching. - Low-voltage drive. • Surface mount type device making the following possible.

portable dvd player Video Filter Amplifier

Abstract: ypbpr scart VM5000 VM5000HD
Contextual Info: 19-4236; Rev 0; 8/08 EVALUATION KIT AVAILABLE 3.3V, HD/SD Triple-Channel Filter Amplifiers with Shutdown The MAX9652/MAX9653/MAX9654 are 3.3V, triplechannel, high-definition HD video-filter amplifiers. Specially designed for YPbPr component video signals,

Bookham Technology

Abstract: NN12 P35-4236-000-200
Contextual Info: Data sheet Engineering Datasheet MMIC SP6T Reflective Switch, DC - 22GHz This P35-4236-000-200 engineering datasheet describes a high performance broadband Gallium Arsenide monolithic single pole six throw RF switch. It is suitable for use in broadband communications, instrumentation and electronic

OHF04132

Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4236 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • Niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunktwellenlänge 850 nm

portable dvd player Video Filter Amplifier

Abstract: VM5000HD ypbpr to scart
Contextual Info: 19-4236; Rev 0; 8/08 EVALUATION KIT AVAILABLE 3.3V, HD/SD Triple-Channel Filter Amplifiers with Shutdown The MAX9652/MAX9653/MAX9654 are 3.3V, triplechannel, high-definition HD video-filter amplifiers. Specially designed for YPbPr component video signals,

4336

Abstract: ULN2151 ULN2139M in 4436 ULN-4436A ULN-2139 ULN-2151 ULN4336A ULN-2171M ULN-4136A
Contextual Info: SPRAGUE OPERATIONAL AMPLIFIER INTEGRATED CIRCUITS TYPE ULN-2139, ULN-2151, ULN-2171, ULN-2173, ULN-4136A ULN-4236A, ULN-4336A, and ULN-4436A HIGH PERFORMANCE MONOLITHIC OPERATIONAL AMPLIFIERS ELECTRICAL CHAfIACTEIIISTICS AT TA = 25°C 2139 2151 2171 2173 4136 4236

OHF04132

Abstract: JESD22-A114-E OHPY3638 4236
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4236 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • • • • • • • • max. Gleichstrom 1 A

OHF04132

Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4236 Wesentliche Merkmale • IR-Lichtquelle mit hohem Wirkungsgrad • niedriger Wärmewiderstand (Max. 9 K/W) • Schwerpunkts-Wellenlänge 850 nm

Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4236 Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • • • • • • • • • • max. Gleichstrom 1 A

4236

Abstract: SFH4236
Contextual Info: 2012-03-27 High Power Infrared Emitter 850 nm IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung Version 1.0 SFH 4236 Features: Besondere Merkmale: • • • • IR lightsource with high efficiency Low thermal resistance (Max. 9 K/W) Centroid wavelength 850 nm

2N4236

Abstract: 2N4234
Contextual Info: 2WV rt L D IS K G2N 4234 2N 4235 EPITAXIAL PLANAR PNP 2N 4236 MEDIUM POWER GENERAL PURPOSE TRANSISTORS The 2N4234. 2N4235 and 2N4236 are silicon epitaxial planar PNP transistors in Jedec TO-39 metal case. They are intended for use in sw itching and am plifier applications.

OHF04132

Abstract: JESD22-A114-E OHPY3638
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4236 Wesentliche Merkmale Features • • • • • • • • • • max. Gleichstrom 1 A niedriger Wärmewiderstand (9 K/W)

OHF04132

Abstract: 4236 SFH 4236
Contextual Info: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4236 Wesentliche Merkmale Features • • • • • • • • • • max. Gleichstrom 1 A niedriger Wärmewiderstand (9 K/W)

diode pjo

Abstract: mosfet b44 2SJ266 AX-8376 B44 diode 2SJ26
Contextual Info: 2SJ266 2093 2090 LD L o w D rive S eries V DSS= 6 0 V P Channel Power MOSFET 4236 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Surface m ount type device m aking the following possible. •Reduction in the num ber of m anufacturing processes for 2SJ266-applied equipm ent.

2SJ266

Contextual Info: Ordering number:EN4236 P-Channel Silicon MOSFET 2SJ266 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ266] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

2SJ266

Contextual Info: Ordering number:EN4236 P-Channel Silicon MOSFET 2SJ266 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2093A [2SJ266] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 1.2 11.0 0.8 9.4 • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive.

4236

Abstract: 4236 8 pin ic BA-4236 l IDT74LVCH16543A LVCH16543A BA4236 ba 4236 l
Contextual Info: 3.3V CMOS 16-BIT LATCHED TRANSCEIVER WITH 5 VOLT TOLERANT I/O IDT74LVCH16543A ADVANCE INFORMATION Integrated Device Technology, Inc. speed, low-power devices are organized as two independent 8-bit D-type latched transceivers with separate input and output control to permit independent control of data flow in either

ignition IGBTS

Abstract: 05n60 MHPM7B16A120B MHPM7B8A120A MHPM7A P15N MSH860 MGP7N60E
Contextual Info: Chapter Four Data Sheets Table of Contents Page Page Motor Control IGBTs Power Modules MGP4N60E .4-2 MGP7N60E .4-6

Contextual Info: Serie / Series MKS 4230 S tiftwannen, stehend, mit R astlasche Rastlasche Pin connectors with snap-in locking device for v er tical connections ver ertical Serie MKS 4230, Lötstifte versetzt Series MKS 4230, solder pins staggered Polzahl Artikel-Nummer Positions Part-Number

Contextual Info: V910ME05 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) £(f) (dBc/Hz) FEATURES • Frequency Range: 4020 - 4330 MHz • Tuning Voltage: 1.5-11 Vdc • MINI-14S-L - Style Package

MINI-16-SM

Contextual Info: CRO4275A-LF 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 £(f) (dBc/Hz) PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 4265 - 4285 MHz • Tuning Voltage: 0.5-4.5 Vdc • MINI-16-SM - Style Package

AN-101

Abstract: V910ME01
Contextual Info: V910ME01 PHASE NOISE 1 Hz BW, typical Rev C3 Voltage-Controlled Oscillator Surface Mount Module Applications • Microwave Radios • Satellite Communications • Direct Broadcast £(f) (dBc/Hz) 9939 Via Pasar | San Diego, CA 92126 TEL: (858) 621-2700 | FAX: (858) 621-2722

4020

Abstract: V910ME05
Contextual Info: V910ME05 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 VOLTAGE CONTROLLED OSCILLATOR Rev A1 PHASE NOISE (1 Hz BW, typical) -20 -40 -60 FEATURES • Frequency Range: 4020 - 4330 • Tuning Voltage: 1.5-11 Vdc • MINI-14S-L - Style Package

MT03P

Contextual Info: H igh V o lta g e • H igh S p e ed S w itc h in g T ra n s is to rs HDT series Bipolartransistors NPN Parts No. Absolute Maximum Ratings Electrical Characteristics V c eo hFE V CE V be (sat) (sat) (max) (m ax) [V] [V] 0jc fT ton ts tf (m ax) (max) (max)