4206E Search Results

ic 4206

Abstract: LTR-4206 LTR 4206E LTR-4206E 4206E LTR4206E LTE-4206 ltr4206
Contextual Info: NPN T-1 Standard Phototransistor LTR-4206/LTR-4206E Features Package Dimensions Wide range of collector currents. Lens for high sensitivity. Low cost plastic package. Description INFRARED PRODUCTS The LTR-4206 series consist of a NPN silicon phototransistor mounted in a lensed, clear plastic, end

Contextual Info: IR Emitter and Detector Product Data Sheet LTR-4206E Spec No.: DS-50-92-0073 Effective Date: 05/03/2000 Revision: C LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

Contextual Info: TAIWAN LITON ELECTRONIC 4TE D • 8335^5 D0032A1 fllT ■ TLIT . _ :-'Ì RÌW- c- ' PHO TO DETECTO R ^ A K A. ^ V‘- ■:'• ' Ì ® LTR-4206/4206E FEATURES • W ID E RANGE • LE N S E D OF CO LLEC TO R CURRENTS. FO R H IG H S E N S IT IV IT Y

LTM-9341

Abstract: lt 7209 LT 7227 LTD482RC TS550 LTC4727E TS-311A ta7235 LT 7232 LTL-423IN
Contextual Info: ALPHANUMERIC INDEX LBL-9316G . 5-11 LB L -9429G . 5-14 L L S-9308G -

ZVN3320F

Abstract: ZVN3320
Contextual Info: SELECTION TABLES TABLE 4: SOT-23 MOSFETS 'SOTFETS' Part number B V Dss Idm at Max. V mA A Min. Pd ^D SIon l V GSIthl J mA ft a Max. V GS mA V W Package marking N-channel ZVN3320F 200 60 1 1 3 1 25 100 10 250 MU B S S1 2 3 100 170 0.68 0.8 2.8 1 6 100 10 360

LTR-4206E

Abstract: LTR 4206E LTR4206 L D R 4206E
Contextual Info: . . ,/•:>: i;' i »• ■ ■ -, :í ' ’ .«• í> LTR-4206 FEATURES • WIDE RANGE OF CO LLECTOR •L E N S E D FOR HIG H S E N S IT IV IT Y . • LOW COST PLASTIC PACKAGE. CURRENTS. DESCRIPTION The LTR -4206 series consist o f a NPN silicon

ZVN4206E

Abstract: ZVN4206 zvn4206a ZVN4206C
Contextual Info: bGE D • Ti7057ä G0D7ß77 323 « Z E T B N-channel enhancement mode vertical DMOS FET ZVN4206 ZETEX SEMICONDUCTORS FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance