418AA Search Results

418AA

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D 2 PAK CASE 418AA ISSUE O 4 2 DATE 27 JUN 2003 1 3 C SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E V W −B− 4 DIM A B C D E F G J K M S V A 1 2 S 3 −T−

65n02r

Abstract: 65N02 p65n02r P65N02
Contextual Info: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge V BR DSS

TRANSISTOR tl-31

Abstract: NTB18N06
Contextual Info: NTP18N06, NTB18N06 Power MOSFET 15 Amps, 60 Volts N−Channel TO−220 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 15 AMPERES 60 VOLTS RDS on = 90 mΩ

calculation of line diSTANCE relay REL 670

Abstract: calculation of line differential relay RED 670 full ready report on automatic phase changer 1MRK 506 267-WEN SWITCHYARD LAYOUT IEC61850 RTXP24 REL 670 IEC-103 1A5060 5A 4 pole relay 220v ac
Contextual Info: Line distance protection IED REL 670 Buyer's Guide Open Configuration 1MRK 506 237-BEN Revision: G Issued: February 2007 Data subject to change without notice Page 1 Features • A protection, control, and monitoring IED with extensive functional library and configuration

NTB18N06

Abstract: NTP18N06G AN569 NTB18N06T4 NTP18N06
Contextual Info: NTP18N06, NTB18N06 Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. N−Channel Typical Applications • • • •

75n03

Abstract: 75N03R P75N03R P75N03
Contextual Info: NTB75N03R, NTP75N03R Power MOSFET 75 Amps, 25 Volts N−Channel D2PAK, TO−220 Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge

Contextual Info: NTB125N02R, NTP125N02R Power MOSFET 125 A, 24 V N−Channel TO−220, D2PAK Features • Planar HD3e Process for Fast Switching Performance • Body Diode for Low trr and Qrr and Optimized for Synchronous • • • • http://onsemi.com 125 AMPERES, 24 VOLTS

Contextual Info: NTB13N10 Power MOSFET 100 V, 13 A, N−Channel Enhancement−Mode D2PAK Features http://onsemi.com • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

733 mosfet

Contextual Info: NTP85N03, NTB85N03 Power MOSFET 85 Amps, 28 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications

N03G

Abstract: ON N03G t23n03g T23N03 t23 n03g NTB23N03RG Datasheets N03G NTB23N03R NTB23N03RT4 NTB23N03RT4G
Contextual Info: NTB23N03R Power MOSFET 23 Amps, 25 Volts N−Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features 23 AMPERES, 25 VOLTS RDS on = 32 mW (Typ)

65n02r

Abstract: 65N02 NTB65N02R NTB65N02RT4 NTP65N02R p65n02 p65n02r
Contextual Info: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge V BR DSS

03L09G

Abstract: SPICE QT 60 CIRCUIT DIAGRAMS 75N03 75N03L 75N03L09 75N03L09G NTB75N03L09T4G MTB75N03HDL MTP75N03HDL NTB75N03L09
Contextual Info: NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.

85n03g

Abstract: 85N03 TB 85N03G NTB85N03g NTP85N03G NTB85N03 NTB85N03T4 NTB85N03T4G NTP85N03 FET MARKING QG
Contextual Info: NTP85N03, NTB85N03 Power MOSFET 85 Amps, 28 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 85 AMPERES, 28 VOLTS

AN569

Abstract: NTB85N03 NTB85N03T4 NTP85N03 SMD310
Contextual Info: NTP85N03, NTB85N03 Power MOSFET 85 Amps, 28 Volts N−Channel TO−220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Typical Applications

Contextual Info: NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 & D2PAK http://onsemi.com Features • • • • • • Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature

23N03G

Contextual Info: NTB23N03R Power MOSFET 23 Amps, 25 Volts N-Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com Features 23 AMPERES, 25 VOLTS RDS on = 32 mW (Typ)

65N02R

Abstract: 65N02 65N02RG p65n02rg 418AA-01 NTB65N02R NTB65N02RG NTB65N02RT4 NTP65N02R p65n02
Contextual Info: NTB65N02R, NTP65N02R Power MOSFET 65 A, 24 V N−Channel TO−220, D2PAK Features • • • • • http://onsemi.com Planar HD3e Process for Fast Switching Performance Low RDSon to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge

75N03L09

Abstract: 75N03L 75N03 A/M29F002BB(45/55/70/90/75N03L09
Contextual Info: NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps, 30 Volts, N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.

418AA

Contextual Info: NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 and D2PAK Features • • • • • Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature

"943" to-220

Abstract: MTB1306 MOSFET n03 N0306
Contextual Info: NTP75N03-06, NTB75N03-06 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK This 20 VGS gate drive vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. This power MOSFET is designed to withstand

NTB4302

Abstract: NTB4302T4 NTP4302
Contextual Info: NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 and D2PAK Features • • • • • Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature

NTB4302

Abstract: NTB4302G NTB4302T4 NTB4302T4G NTP4302 NTP4302G DSA0032463 418AA-01
Contextual Info: NTP4302, NTB4302 Power MOSFET 74 Amps, 30 Volts N−Channel TO−220 & D2PAK http://onsemi.com Features • • • • • • Low RDS on Higher Efficiency Extending Battery Life Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature

03L09

Contextual Info: NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK http://onsemi.com This Logic Level Vertical Power MOSFET is a general purpose part that provides the “best of design” available today in a low cost power package. Avalanche energy issues make this part an ideal design in.

NTB18N06

Contextual Info: NTP18N06, NTB18N06 Power MOSFET 15 Amps, 60 Volts N−Channel TO−220 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http://onsemi.com 15 AMPERES 60 VOLTS RDS on = 90 mΩ