415 NM 100 MW Search Results

zd 409

Abstract: 20MS SFH415
Contextual Info: I n f r a r e d E m it t e r s IR -L u m in e s zen zd io d e n 3. Em itters in Plastic Package 3. Emitter im Plastikgehàuse Package Type SFH 415 S FH 415-U ^•peak nm <P deg. I. mW/sr W V 950 ± 17 > 25 > 40 1.3 Ordering code at /F = 100 mA I p = 20 ms

HL7806

Abstract: 6808X L7851 hl7852 HL6411G HL8325G hitachi HL7852 hl7806g HL7851
Contextual Info: Product Lineup W avelength Visible and infrared laser diodes 633 nm O ptical output 3 mW Internal circuit Part num ber Main application LD ^P * HL6314M G HL6316G HL6411G* Pointer HL6315G f Pointer HL6312G Bar code reader H L 6313G t Bar code reader HL6720G

Contextual Info: HL1521 A/AC InGaAsP LD Description The HL1521A/AC are 1.55 nm band laser diodes with a double heterostructure. Features Long wavelength output: = 1530 to 1570 nm 5 mW CW operation at room temperature Fast pulse response: tp tf < 0.5 ns Package Type • HL1521 A: A1

Contextual Info: H L 1 3 2 2 A /A C InGaAsP LD Description The HL1322A/AC are 1.3 jm band InGaAsP laser diodes with a double heterojunction structure. They are relatively high power output (10 mW devices as compared to the HLP5400 or the HL1321AC. They are suitable as light sources for high capacity long distance optical fiber communication systems and various

RLCD-M66H-750

Contextual Info: ROITHNER LASERTECHNIK PRESENTS NEW VIOLET CW LASER DIODES DL-3146-151, 405 nm, 5 mW, 5.6 mm, SANYO, with photodiode only EUR 99.90 DL-4146-101S, 405 nm, 20 mW, 75 °C, 5.6 mm, SANYO, with photodiode DL-5146-101S, 405 nm, 40 mW, 75 °C, 5.6 mm, SANYO, with photodiode

RLT415-50CMG

Contextual Info: RLT415-50CMG Co m p li es w ith R o H S 20 02/ 95 / W E d ir ec t i ve Description RLT415-50CMG is an Violet Laser Diode emitting at 415 nm with rated output power of 50 mW CW at room temperature, in standard 5.6mm TO package. Maximum Ratings Parameter Symbol

VL415-3-20

Contextual Info: VL415-3-20 v 2.0 06.06.2014 Description VL415-3-20 is a InGaN based Light Emitting Diode with a typical peak wavelength of 415 nm and radiation of 10-16 mW. It is mounted on a lead frame and encapsulated in a 3 mm clear UV-resistant epoxy resin, which provides a viewing angle of 20°.

VL415-5-15

Contextual Info: VL415-5-15 v 2.0 06.06.2014 Description VL415-5-15 is a InGaN based Light Emitting Diode with a typical peak wavelength of 415 nm and radiation of 10-16 mW. It is mounted on a lead frame and encapsulated in a 5 mm clear UV-resistant epoxy resin, which provides a viewing angle of 15°.

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-IR-Lumineszenzdioden, hergestellt im Schmelzepitaxieverfahren • Gute Linearität /e = /[/p ] bei hohen Strömen • Sehr hoher Wirkungsgrad

transistor 415

Abstract: OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296
Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,

transistor 415

Abstract: MARKING 416 OPTO OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296 SFH 960
Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,

HL1321BF

Contextual Info: HL1321AC/BF/DL/DM, HLP5400_ inGaAsP LD Description The HL1321 AC/BF/DL/DM and HLP5400 are 1.3 nm band InGaAsP laser diodes with a double het­ erostructure. They are suitable as light sources for optical fiber communication systems and various types

sfh 517

Abstract: Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 TA521 SFH415
Contextual Info: SFH 415 SFH 416 SFH 415 SFH 416 fex06630 fexf6626 GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● GaAs-IR-Lumineszenzdioden, hergestellt

transistor 415

Abstract: GEO06645 GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 transistor sr 61
Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat 0.6 0.4 fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54mm 1.8 1.2 9.0 8.2 GEO06645 Chip position Approx. weight 0.2 g 5.9 5.5 0.6 0.4 4.0

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Area not flat o Cathode Diode Collector (Transistor) CO (O (O o X 0) GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,

OHRD1938

Abstract: Q62702-P1137 Q62702-P1139 Q62702-P296
Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,

SFH 756

Contextual Info: IR-Lumineszenzdioden Infrared Emitters 1. GaAs-IRED Forts. Package Type 1. GaAs IRED (cont’d) <P deg. Ordering code I. mW/sr 1.3 in SMT package (^pMK = 950 nm) VF = 1.3 V (If = 100 mA) 1.3 im SMT-Gehäuse (Xpeak = 950 nm) Vr = 1,3 V (/F= 100 mA) SFH 420

B5G5

Abstract: diode b5g5 B20S HL1321AC HL1321BF HL1321DL HL1321DM HLP5400 Hitachi Scans-001
Contextual Info: HL1321 AC/BF/DL/DM, HLP5400 InGaAsP LD Description The HL1321AC/BF/DL/DM and HLP5400 are 1.3 |im band InGaAsP laser diodes with a double het­ erostructure. They are suitable as light sources for optical fiber communication systems and various types of optical equipment.

sfh 517

Abstract: diodes 415
Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 7.5 EL •r. E N, * u/ 4.8 Area not f l a t ' Chip p o s itio n ' A p pro x. w e ight 0.2 g Area not fla t 1.2 29 .5 _ 27.5 Chip position Cathode D iode C o llector (T ra n s is to r)

ms 415

Abstract: design opto interrupter OHRD1938 Q62702-P1137
Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Lead Pb Free Product - RoHS Compliant SFH 415 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,

Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300, SFH 203 •

Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Lead Pb Free Product - RoHS Compliant SFH 415 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,

Contextual Info: HlTACHI/ OPTO ELECTRONICS S l4E I) • MMTbEOS DOieO^l lfl7 B H I T M H L 1 3 2 1 A C /F G /B F /P L /P M , H L P 5 4 0 0 Description inGaAsP LD -r^ m -c n The HL1321AC/FG/BF/DL/DM and HLP5400 are double heterojunction 1.3 (im band InGaAsP laser diodes.