414 RF TRANSISTOR Search Results

transistor BF 414

Abstract: 414 rf transistor 414 transistor K 414 transistor BF 414 BF414 BF transistor datasheet VCE0-30V marking 414
Contextual Info: BF 414 NPN Silicon RF Transistor ● BF 414 For low-noise, common base VHF and FM stages 2 3 1 Type Marking Ordering Code BF 414 – Q62702-F517 Pin Configuration 1 2 3 C B Package1 TO-92 E Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

transistor BF 414

Contextual Info: SIEMENS NPN Silicon RF Transistor BF 414 • For low-noise, common base VH F and FM stages Type Marking Ordering Code BF 414 - Q62702-F517 Pin Co nfiguraltion 1 2 3 B C Package1 E TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

heat sink design guide, IGBT

Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
Contextual Info: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs

transistor BF 257

Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität

Contextual Info: » w / IjF i Com I¡near ÜLJ Corporation Quad, Low-Power Monolithic Op Amp CLC414 APPLICATIONS: FEATURES typical : • • • • • • • • • • • • • • • com posite video distribution amps H D TV am plifiers R G B-video am plifiers CCD signal processing

BF606

Abstract: BF254 BF414 BF763 BF255 BF450 BF 414 BF979 to-92 type BF979S
Contextual Info: Transistors — bipolar RF tran sisto rs P la stic p acka g e T O 92 NPN PNP = = N Vceo P Figure Characteristics TA = 25°C Maximum ratings Type lc P.O. tore /cBO V^CEaat ft mA Vce V nA V MHz lc leu* V mA mW BF 199 N 25 25 500 85 (> 38) 7 10 <100 - 550 BF 240

PO32

Abstract: 33J6 PH1600
Contextual Info: n/A-con p 2S E o h D • 5^42205 n D G Q S 7b 273 ■ HAP - T-3 3 -H M /A-COM PHI, IN C. 1742 CRENSHAW BLVD, TORRANCE, CALIFORNIA 9 0 5 0 1 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 A # A > M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR

MRF1375

Contextual Info: MOTOROLA Order this document by MRF1375/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF1375 Designed for 1025 –1150 MHz pulse common base amplifier applications such as TACAN and DME. • Guaranteed Performance @ 1090 MHz

npn 222

Abstract: 251bf "AGC Amplifier" AM "AGC Amplifier" AM FM radio AM/FM bf 233 BF222 agc amplifier F VHF amplifier
Contextual Info: CONSUMER TRANSISTORS continued o Q. > i> 0 CL Li] CD >~ < O ÜJ ÜJ JE > > U. o _c s> 0) > X o L» CM II I- rsi X ¡2 ro 1- P A CKAG E cc < NF (dB) h PG (dB) > DESCRIPTIO N TYPE RF amplifiers-mixer/oscillators 3 _E □ o_ 800 200 600 TO-72 6.5 800 175 550 TO-72

BVC71

Abstract: BCV71R BCV71 BCV72 BCV72R DS42 S0T23 ctc4
Contextual Info: BCV71 BCV72 S0T 23 NPN SILICON PLANAR SM ALL SIGNAL TRANSISTOR PA RT M A RKIN G DETAILS:BVC71 - K7 BCV72 - K8 BCV 71R - K6 BCV 72R - K9 ABSOLUTE M A X IM U M RATINGS PARAM ETER SYM BO L VALUE U N IT Collector-Base Voltage V CBO 80 V Collector-Em itter Voltage

Contextual Info: Part Number: Integra IB1214M55 TECHNOLOGIES, INC. Silicon Bipolar  Ultra-high fT L-Band Radar Transistor Class C Operation  High Efficiency The high power pulsed radar transistor device part number IB1214M55 is designed for L-Band radar systems operating over

Transistor Manual GE

Abstract: 2SA391 GE Transistor Manual
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

cl 740

Abstract: tss405 PO65 7w RF POWER TRANSISTOR NPN PH1600
Contextual Info: n,n/A-con p h asE D o ÜDDDSbô 1T7 • HA P T - 33-01 M /A -C O M PH I, IN C . 1742 CRENSHAW BLVD. TORRANCE, CALIFORNIA 90501 213 320-6160 TWX 910-349-6651 FAX 213-618-9191 M/A-COM PHI, INC. PRELIMINARY DATA SHEET BIPOLAR NPN RF POWER TRANSISTOR FEATURES

2SB546

Abstract: 2SB541 2SB542 138B 2SB544 2SB547 2SD386
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

ELTEC INSTRUMENTS

Contextual Info: 414 Series Opposed Dual Pyroelectric IR Detector with Source Follower E LH T E C Manufactured under one or more of the following US patents 3,839.640 - 4.218,620 - 4.326,663 - 4,384207 - 4,437,003 4,441,023 - 4.523,095 .040 SPACING r T 1.0 ELEMENT T.O080

BF441

Abstract: BF509 BF 184 transistor BF 145 transistor BF440 BF 145 BF680 transistor BF 509 BFS20 BFS62
Contextual Info: RF transistors Type Structure Silicon transistors Fifl. Nr. Maximum ratings Characteristics A c t a* I q anc ^CE V mA f j at MHz 48-167 1 10 a 27 4 10 7 a 38 67-220 1 36-125 1 10 30 25 £27 40 40 c iire a UCB V PF 230 1 0.65 10 350 4 0.15 10 550 260 200 5

Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19060NR1 MRF5S19060NBR1 MRF5S19060MR1 MRF5S19060MBR1 Designed for broadband commercial and industrial applications with

Transistors BF 324

Abstract: AM-FM TUNER BF252 UHF "AGC Amplifier" AGC Amplifiers radio diode SR 506 "AGC Amplifier" bf 245 fa 506 bf 233
Contextual Info: CONSUMER TRANSISTORS IF amplifiers @ o o m LU U ai > > and @ ÍD < < O < E I- C3 CL Q_ @ □ a . BF 158 NPN IF a m p lifie r fo r T V BF 160 NPN IF a m p lifie r fo r AM -FM radio 12 12 BF 167 NPN AG C-l F a m p lifie r fo r T V 30 BF 173 NPN IF vision am p-output stage

Contextual Info: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!

ELTEC INSTRUMENTS

Abstract: ELTEC automatic heat detector pyroelectric sensor elements Pyroelectric Infrared Sensors
Contextual Info: ELTEC INSTRUMENTS INC \ D1 m -ie! DE § 3 E T M 0 m □0D040T 0 414 Series Opposed Dual Pyroelectric IR Detector with Source Follower EËJTEC Manufactured under one or more of the following US patents 3,839,640 - 4.218,620 - 4,326,663 - 4,384.207 - 4/137,003 4441,023 - 4523.095

transistor j241

Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of

darlington pair transistor

Abstract: 6LF6 common collector amplifier circuit designing micro-x mhz ghz microwave GRM188R71E473K Amplifier SOT-89 c4 0603CS-33NX_LU SKY65014 sky65015-70lf transistor Common Base configuration
Contextual Info: APPLICATION NOTE Gain Block Bias Networks Introduction Skyworks gain block amplifiers are InGaP/GaAs HBT integrated circuits. They use a Darlington-pair transistor configuration with bias and feedback resistors properly selected to determine the gain, input and output impedances and bias parameters. A schematic representation of the amplifier is shown in Figure 1.

Contextual Info: RFH RF2046 Preliminary MICRO DEVICES GENERAL PURPOSE AM PLIFIER Typical Applications • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers

Contextual Info: GaAßAs IRED & PHOTO-IC TLP2530,2531 DEGITAL LOGIC ISOLATION. Unit in mm LINE RECEIVER. POWER SUPPLY CONTROL. SWITCHING POWER SUPPLY. TRANSISTOR INVERTER. 1 The TOSHIBA TLP2530 and TLP2531 dual photocouplers 4 7.62 ±Q25 a66±Q25 consist of a pair of GaA£As light emitting diode and