41256 MEMORY Search Results

Siemens HYB 41256-12

Abstract: 41256-12 dram 41256-15 511000BJ-70 Q67100-Q539 41256-12 514400J-10 514256BZ-70 514400J-80 511000BZL-70
Contextual Info: Summary of Types Summary of Types Type Ordering Code Package Description Page Memory Components cont’d HYB 41256-10 Q67100-Q380 P-DIP-16 DRAM (Access Time 100 ns) 35 HYB 41256-12 Q67100-Q346 P-DIP-16 DRAM (Access Time 120 ns) 35 HYB 41256-15 Q67100-Q347

41256

Abstract: BIOS and Kernel Developer’s Guide (BKDG) For AMD Family 11h Processors Socket S1g2 Processor Functional Data Sheet SBI Temperature Sensor Interface (SB-TSI) SBI Temperature Sensor Interface SB-TSI AMD 40821 Socket S1g2 Processor Functional 40821 APIC21 Socket S1g2 Processor
Contextual Info: 41256 Rev 3.00 - July 07, 2008 AMD Family 11h Processor BKDG Cover page BIOS and Kernel Developer’s Guide BKDG For AMD Family 11h Processors Advanced Micro Devices 1 41256 Rev 3.00 - July 07, 2008 AMD Family 11h Processor BKDG 2005–2008 Advanced Micro Devices, Inc. All rights reserved.

M41256A

Abstract: 41256A
Contextual Info: O K I sem iconductor MSM 41256 A_ 262,144-WORD x 1-BIT DYNAMIC RAM <PAGE MODE TYPE> GENERAL DESCRIPTION The Oki MSM41256A is a fully decoded, dynamic NMOS random access memory organized as 262,144-word x 1 bit. The design is optimized for high-speed, high-performance applications

41256

Abstract: 41256 dram 41256 ram Siemens HYB 41256-12 41256-12 dram 41256 MEMORY 41256-15
Contextual Info: SIEM EN S 262,144-Bit Dynamic RAM • • • • • • • • • • • • • HYB 41256-10/-12/-15 262,144 x 1-bit organization Industry standard 16 pins Single + 5 V supply, ± 1 0 % tolerance Low power dissipation: - 358 mW active max. - 28 mW standby (max.)

41256

Abstract: 41256-15 41256 ram Siemens HYB 41256-12 41256 dram 41256-12 41256-12 dram 41256-10 41256 MEMORY C511
Contextual Info: S IE M E N S 262,144-Bit Dynamic RAM HYB 41256-10/-12/-15 • 262,144 x 1-bit organization • Industry standard 16 pins • Single + 5 V supply, ± 10 % tolerance • Low power dissipation: - 358 mW active max. - 28 mW standby (max.) • 100 ns access time

41256

Abstract: Siemens HYB 41256-12 41256 dram 41256-12 41256-15 41256-12 dram 41256 ram
Contextual Info: SIEMENS 262,144-Bit Dynamic RAM • • • • • • • • • • • • • HYB 41256-10/-12/-15 262,144 x 1-bit organization Industry standard 16 pins Single + 5 V supply, ± 10 % tolerance Low power dissipation: - 358 mW active max. - 28 mW standby (max.)

41256 dram

Abstract: MX8012 41256 41256 ram 41256 MEMORY Continuously Variable Slope Delta Modulator mx8003
Contextual Info: M A C R O NIX INC 34E D • 5bûûôô5 0QQQ177 b • 'T : 7 7 - I3 MX8012 PRELIMINARY m FEATURES GENERAL DESCRIPTIONS • Adaptive Delta Modulation is used. • Variable speech length con­ trolled by STOP input. • Direct drive of 41256 or 411024. • Internal power up reset.

TC55B8128

Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6

turion 64 x2 pin diagram

Abstract: AMD turion 64 X2 AMQL62DAM22GG pin diagram AMD Athlon 64 X2 AMQL60DAM22GG AMD Athlon 64 X2 AMD Athlon 64 X2 pin diagram Socket S1g2 Socket S1g2 Processor AMQL64DAM22GG
Contextual Info: AMD Family 11h Processor Power and Thermal Data Sheet for Notebooks Publication # 43373 Revision: 3.00 Issue Date: September 2008 Advanced Micro Devices 2008 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,

41C1000

Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258

FZH115B

Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
Contextual Info: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P

80387SX

Abstract: 41256 41256 dram 88C215 ibm at motherboard 80286 80386SX 511000 dram 88C212 88c211 80286 pin configuration
Contextual Info: SYSL06IC TECHNOLOGY CORP 24E D M &Ö14540 ODOOOOl 4 • ~ 7 ^ 5 ä '3 3 Solutions - o / glfiUKìll TdOWMilY ©©BP, Chip Set \V 88C286 SUPER ENHANCED CHIP SET The 88C286 is an enhanced PC/AT compatible chip set which is a highly integrated VLSI implementation of the control logic used in the

Contextual Info: MC-41256A9 262,144 X 9-Bit Dynamic NMOS RAM Module NEC Electronics Inc. Description Pin Configuration The MC-41256A9 is a 262,144-word by 9-bit DRAM mod­ ule designed to operate from a single + 5-volt power supply. Advanced dynamic NMOS circuitry, Including a

8 pin ic lm 745

Contextual Info: KMM411024/KMM511024 Ï? ? SAM SUNG KMM411025/KMM511025_ M Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025,

IC TTL 7432

Abstract: IC 7402, 7404, 7408, 7432, 7400 ttl 74118 74189 memory ic 74138 74189 ttl memory TTL 74289 RC4458 IC 74373 ttl 74592
Contextual Info: Test and Measurement Systems Electronic Manufacturing Services ABI Electronics Limited Dodworth Business Park Barnsley S75 3SP South Yorkshire United Kingdom Tel: +44 0 1226 207420 Fax: +44 (0)1226 207620 www.abielectronics.co.uk ChipMaster Compact Professional IC List

51c256

Abstract: 41256 dram 74LS244 80C451 80C51 83C451 87C451 AN408 AN417 centronics printer
Contextual Info: Philips Semiconductors Application note 256k Centronics printer buffer using the 87C451 microcontroller AN417 indicated by its name. This feature is an advantage when using /WR and /RD as /RAS and /CAS control signals for a DRAM array. Treated as a normal port bit, the /WR pin is cleared and set by

nec 424256

Abstract: 424256 41256 dram 42256 41256 424256 pin out 424256 memory
Contextual Info: MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module Lylj W NEC Electronics Inc. Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynam ic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single + 5 -vo lt power

memory samsung

Contextual Info: KMM411024/K M M 511024 KMM411025/KMM 511025 SAMSUNG Semiconductor Preliminary IM eg X 1 DRAM SIP and SIMM Memory Modules JULY 1987 FEATURES GENERAL DESCRIPTION • 1M x 1 Organization • Performance range: The Samsung KMM411024, KMM411025, KMM511024 and KMM511025, are 1M x 1 dynamic RAM

philips PE 2470

Abstract: 87C451 circuit diagram 24 column printer 41256 dram printer 8051 8051 and printer 74LS244 80C451 80C51 83C451
Contextual Info: INTEGRATED CIRCUITS AN417 256k Centronics printer buffer using the 87C451 microcontroller January 1992 Philips Semiconductors Philips Semiconductors Application note 256k Centronics printer buffer using the 87C451 microcontroller AN417 indicated by its name. This feature is an advantage when using /WR

nec 424256

Abstract: 424256 memory 424256 424256 pin out 424256 nec
Contextual Info: M C- 42512 A 3 6 , - 424512 A 36 524,288 X 36 -Bit Dynam ic CM OS RAM Module 1L T M 7 /* * F U Æ2 d W N E C E le ctro n ics Inc. Pin Configuration Description The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits

7805CT

Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
Contextual Info: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior

D41256

Abstract: 41256 ram 41256
Contextual Info: Y * ryÆ L W NEC Electronics Inc. PPD41256 262,144 X 1-Bit Dynamic NMOS RAM Description Pin Configurations The iiPD41256 is a 262,144-word by 1-bit dynamic RAM designed to operate from a single + 5-volt power supply and fabricated with a double polylayer, N-channel,

424256 memory

Abstract: 424256
Contextual Info: SEC MC-42512A36, -424512A36 524,288 X 36-Bit Dynamic CMOS RAM Module NEC Electronics Inc. Prelim inary Information April 1992 Description Pin Configuration The MC-42512A36 and the MC-424512A36 are dynamic RAM modules organized as 524,288 words by 36 bits and designed to operate from a single +5-volt power

PDM41257SA15D

Abstract: Paradigm 41256 PDM41024S20L32 PDM41024-S20L32 PDM41257LA15D MT5C1005C CY7C199-35DMB SRAM Cross Reference EDI84256LPS25TB 41256
Contextual Info: National Semiconductor Part Numbering System N S 41024 L 20 E -SMD Grade Package Code Speed Grade Power Level Device Type /883 MIL-STD-883 Level B AC/DC tested at –55, +25 and +125°C with High Temp Burn-in -SMD DESC Standard Military Drawing AC/DC tested at –55, +25 and +125°C with High Temp Burn-in