4116 ITT Search Results

itt 4116

Abstract: itt capacitors 4116 memory 4116 ITT IC 4027 pin diagram 4116 4027 itt ITT SEMICONDUCTORS ITT4
Contextual Info: ITT4116 16384-Bit Dynamic Random Access Memory 7-8 PHONb: 415 961-8121 TWX: (910) 379-6497 1121 SAN ANTONIO ROAD PALO ALTO, CALIF. 94303 TTT * 1 semiconductors * ITT4116 16384-Bit Dynamic Random Access Memory Features - Industry standard 16 pin DIP - 150 ns access time (ITT 4116-2)

SN76477

Abstract: TNY 176 PN EQUIVALENT 2n4401 free transistor equivalent book tis43 XR2206 application notes Semiconductor Data Handbook mj802 2N3866 s2p bc149c TIP35C TIP36C sub amplifier circuit diagram LM131
Contextual Info: From the Publishers of ETI & HE HEM M iNqs E U c t r o n ic s L rd Electronic C om ponents Et M icrocom puters 16 BRAND STREET, HITCHIN, HERTS, SG5 1JE Telephone: 0462 33031 memories 2114L 2708 2716 2532 2732 4116 4164 6116P3 6116LP3 •Op 220p 210p 380p

P55i

Contextual Info: Electronics 8 ~ B i t C M O S M i c r o c o n t r o 11 e r Product Specification OVERVIEW The K S 88C 4116 single-chip 8-bit m icrocontroller is fabricated using a highly advanced C M O S process. Its fast and reliable CPU is based on Zilog's S u pe r8 architecture. W ith six 8-bit I/O ports, a fu ll-duplex serial port, two

SMS 20 1000A

Abstract: PU3116 PU3216 PU4116 PU4216 PU4416 PU4516
Contextual Info: P o w er T ra n s is to r A rra y s P U 3 1 1 6 , P U 4 1 1 6 , PU441Ó P U 3116 , P U 4116 , P U 4 4 1 6 P a c k a g e D im e n s io n s PU3116 Silicon NPN Epitaxial Planar Type 20.5max. sT s P o w e r Amplifier, S w itching C o m p l e m e n ta r y P a ir with P U 3 2 1 6 , P U 4 2 1 6 , P U 4 5 1 6

4116 ram ic

Abstract: 4116 ram RAM 4116 4116 dynamic ram 4116 memory M5K4116P 4116 ic ram M5K4116P-3 4116 M5K4116
Contextual Info: MITSUBISHI LSIs M5K 4116 P-2, S-2; P-3, S-3; P-4, S-4 1 6 3 8 4 -B IT 1 6 3 8 4 -W O R D BY 1-B IT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW ) T h is is a fa m ily o f 16 3 8 4 - w o r d by 1 -b it d y n a m ic R A M s , fa b ric a te d w ith th e N -ch an n e l silicon-gate M O S process, and

vfd 5x7

Abstract: JIS-C-6220 T90MS EIS BMW 4116 ram ic 6 digit VFD BCM sdk M66004SP VFd 5X7 DOT M66004
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

information applikation

Abstract: U880D information applikation mikroelektronik Halbleiterbauelemente DDR "Mikroelektronik" Heft u880 mikroelektronik applikation VEB mikroelektronik mikroelektronik information applikation mikroelektronik DDR
Contextual Info: i« ¡ 2 Information Applikation t m f f i ^ o e l e k t s n o •/ Information Applikation n • Heft 30: HALBLEITERSPEICHER Teil 2 SRAM und DRAM v e b halbleiterw erk frankfurfc/odor KBD im veb Kombinat mikroelektronik KAMMER DER TECHNIK Bezirksverbond

JIS-C-6220

Abstract: 4116 ram DIG03
Contextual Info: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5x7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5x7-segment vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech­ nology. It contains 160 ROM characters and 16 user-defined RAM

LM 4138

Abstract: HL 482 RAM 4163 cd 4162 GFIJ c 4161
Contextual Info: TO SH IB A TLCS-870/X V 3 y - t r í i , TLCS-870/X v V - X 1.10.1 t< flJ g S íift'íív ^ c o v i-c ia ili L T $¿3S/3£Í& B n ^ 1 LD A, (x) ^ í y ^ fj Í08H' -7 > t “ #±Ü liO ^ ï 'J fi-tf n f X h ÿ (?) n — ^ K$% ❖ j i t f b b %> f) t “ -tfn T-x M l f g H Í -9 i ¿ H i <0,

Contextual Info: 0 3.9 O t°10 P.C.B. LAYOUT 7.62 2.54 't io csi -e — & -6 - 5 x 0 0.80 T oo 1.27 CODE DRR4116 1 2 4 8 Tolerances: • • CIRCUIT CHARACTERISTIC POSITION « on I 1 2 3 4 5 6 7 8 9 A B c D E F • • • • • • • • • • • • • • • • • •

1F0620

Abstract: ADF4116
Contextual Info: ANALOG DEVICES PLLFrequencySynthesizer Preliminary Technical Data ÆDF4116/ÆDF4117/ÆDF4118 FEATURES A D F4116: 550 M H z A D F4117: 1.2 GHz A D F4118: 3.0 GHz +2.7 V to +5.5 V Pow er Supply 3-W ire Serial Interface Digital Lock Detect Pow er Down M ode GENERAL

ms-6535

Abstract: AA51 4116 lf 4116 16k ram 18-PIN BOX225012 TMS4132JDL 3as1 tms 375 CA31
Contextual Info: MOS LSI 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY i- 32,768 X — i- NOVEMBER 1978 1 Organization • 10% Tolerance on All Supplies All Inputs including Clocks TTL-Compatible 18-PIN SIDEBRAZE DUAL-IN-LINE PACKAGE TOP VIEW • Unlatched Three-State Fully TTL-Compatible

Contextual Info: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5X7-SEGMENT VFD CONTROLLER DESCRIPTION The M66004 is a 16-digit 5x7-segm ent vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech­ nology. It contains 160 ROM characters and 16 user-defined RAM

11308

Contextual Info: UNCONTROLLED DOCUMENT REV, m PA RT NUM BER REV. SSB-CEL1 0555UWW c E.C.N. NUM BER AND REVISIO N COMMENTS DATE E.C.N. # 1 1 2 7 7 . 1 0 .6 .0 5 E.C.N. # 1 1 3 0 2 . 1.24.06 E.C.N. #11305. 2.2.06 ELECTRO-OPTICAL CHARACTERISTICS TA= 25T PER MODULE lf = BO mA

2N2386

Abstract: 2N2386A
Contextual Info: TYPES 2N2386, 2N2386A P-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . DL-S 6 8 1 0 9 1 6 , S E P T E M B E R 196 8 AUDIO- TO HIGH-FREQUENCY SMALL-SIGNAL AMPLIFIERS 2N2386A offers the following improvements resulting from process innovation:

to48c

Abstract: IC LA 4138 TO-48C LA 4138 2N2432A TELEDYNE
Contextual Info: TELEDYNE COMPONENTS aaE T - s r - i : 0T17bG2 GQObSfiH D D M ILITARY APPROVED LOW LEVEL - HIGH SPEED *2N2432 ‘ 2N2432A 2N4138 SILICON E PITA XIA L JUNCTION NPN SWITCHING TRANSISTORS * AVAILABLE AS JAN, JAN-TX, JAN-TXV, JAN-S GEOMETRY 485 E LEC T R IC A L DATA

diode zener c25

Abstract: IGBT FF 300
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MMG05N60D Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate This IGBT contains a built-in free wheeling diode and a gate protection zener diodes. Fast switching characteristics result in

TMS4116

Abstract: TMS4132
Contextual Info: MOS LSI TMS 4132 JDL 32,768-BIT DYNAMIC RANDOM-ACCESS MEMORY NOVEMBER 1979 32,768 «AX SUPPLY 1 X 1 Organization 10% Tolerance on All Supplies • All Inputs Including Clocks TTL-Compatible

Contextual Info: What H E W L E T T * mLliM PACKARD Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical Data AT-41435 Features • Low N oise Figure: 1.7 dB Typical at 2.0 GHz 3. OdB Typical at 4.0 GHz • High A ssociated Gain: 14. OdB Typical at 2.0 GHz 10.0dBTypicalat4.0 GHz

F190

Abstract: F191 F-190
Contextual Info: 190 54F/74F190 Connection Diagrams Up/Down Decade Counter W ith Preset and Ripple Clock m Oo[T 77| c p c l [7 1 3| RC / d |T Ï 2 l TC Q2 T T T | PL 03 [ 7 7 3 ] P2 Description The ’F190 is a reversible BCD (8421 decade co u n te r featuring synchronous cou ntin g and asynchronous presetting. The preset feature

M66004SP

Abstract: 16 Digit 5x7 Segment VFD 4116 ram ic JIS-C-6220 ely transformers 6 digit VFD M66004 vfd 5x7
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

vfd 5x7

Abstract: DIGITAL VFD CLOCK IC vfd 14 segment 34 pin 4 digit 7 segment display 14 pin 2 digit 7 segment display
Contextual Info: MITSUBISHI DIGITAL ASSP M66004SP/FP 16-DIGIT 5X7-SEGMENT VFD CONTROLLER DESCRIPTION The M 66004 is a 16-digit 5x7-segm ent vacuum fluorescent display (VFD) controller using the silicon gate CMOS tech­ nology. It contains 160 ROM characters and 16 user-defined RAM

4116 2n

Abstract: BFG 99
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF A m plifiers 2N 5484 2N 5486 N -C h a n n e l — Depletion 1 DRAIN MAXIMUM RATINGS Rating D r a in -G a te Voltage R everse G a te - S o u rc e Voltage D rain C u rrent F o rw a rd G a te C u rrent Total D e vice D issipa tion @ T q = 2 5 cC

Contextual Info: 190 54F/74F190 Connection Diagrams Up/Down Decade Counter With Preset and Ripple Clock Description The ’F190 is a reversible BCD 8421 decade co u n te r fea tu ring synchronous c o u n tin g and asynchronous presetting. The preset feature allow s the ’F190 to be used in program m able dividers. The C ount Enable