4101 TRANSISTOR Search Results

ME0412

Abstract: ME0411 ME4102 ME0413 ME4101 transistor 4103 ME4103
Contextual Info: ME 4101 ' ME 4102 • ME 4103 SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES MECHANICAL OUTLINE APPLICATIONS TO-92F • High G ain h frg . 1 0 0 - 6 0 0 @ lm A • Low Noise Pre-am plifier

HXTR4101

Abstract: HXTR-4101 30ma 40v npn NPN rf transistor RF TRANSISTOR 1.5 GHZ
Contextual Info: HXTR 4101 NPN SILICON RF TRANSISTOR PACKAGE STYLE DESCRIPTION: The HXTR4101 is a Common Base Device Designed for Oscillator Applications up to 10 GHz. MAXIMUM RATINGS IC 70 mA VEBO 1.5 V VCEO 20 V TJ 300 °C TSTG -65 °C to 250 °C PT 900 mW @ TC = 25 °C

Contextual Info: HXTR 4101 NPN SILICON RF TRANSISTOR PACKAGE STYLE DESCRIPTION: The HXTR4101 is a Common Base Device Designed for Oscillator Applications up to 10 GHz. MAXIMUM RATINGS IC 70 mA VEBO 1.5 V VCEO 20 V TJ 300 C TSTG -65 C to 250 C PT 900 mW @ TC = 25 C O O O O

IHLP-1616BZ-ER-R47-M-01

Abstract: IHLP1616BZER1R0M01 EEEFK1A151P IHLP1616BZERR47M01 GRM188R71C104K MAX15022
Contextual Info: 19-4101; Rev 0; 5/08 MAX15022 Evaluation Kit The MAX15022 evaluation kit EV kit circuit demonstrates the MAX15022 IC, which integrates two highperformance PWM switching step-down regulators and two low-dropout (LDO) controllers. Each controller and regulator features independent enable controls for

aefg

Abstract: tss721 master
Contextual Info: TSS400-S2 iPOWER PROGRAMMABLE HIGH-PRECISION SENSOR SIGNAL PROCESSOR S LM S 002-D 4101, OCTOBER 1993 12-Bit ADC With 4 Multiplexed Inputs On-Board Ratiometric Current Source Programmable From 0.15 mA x (SVqd/V to 2.4 mA x (SVDD/V) Wide Supply Voltage Range

LINFINITY LX8383A

Abstract: 3845b power supply 3845b 2842ad8 intel 965 motherboard circuit diagram UC2843D CS830 uc3842 switching power supply with 3843b IRF6345
Contextual Info: Automotive Products Guide INSTRUMENTATION - GAUGE DRIVERS GAUGES DRIVEN PART NUMBER MAJOR CS-289 1 CS-3750 1 CS-4101 1 CS-4102 1 CS-4121 1 CS-4172 1 CS-8190 1 CS-8191 1 INPUT MINOR FREQ. PWM SPI CURRENT • DRIVE METHOD 20 mA • • • 2 FEATURES OUTPUT

4311 mosfet transistor

Abstract: 2SK2068 2sc 1027 transistor 4-071 transistor 2SK2067 S2VC 4102 transistor s2ld s4vb bridge rectifier 4072
Contextual Info: O rd erin g and P a c k in g In fo rm a tio n Explanation of Packing Lists 1. Parts No. Example: 1 Tape & Reel Surface Mount Devices D 1N□ Maximum Reverse Voltage Example: 2 2. 3. 2SC3164 Transistor or MOSFET ^ Besides SC, there are SA, SB, SD and SK devices.

smd transistor 2f

Abstract: 330 smd transistor 2sk 168 K2663 smd TRANSISTOR code 2F 2SJ 162 m 147 smd transistor s4vb 10 73 SMD CODE TRANSISTOR 2SK smd transistor 1Z
Contextual Info: Basic Ordering and Packing Form Explanation of Packing Lists I.Type No. Exam ple 1 D 1N □ Exam ple 2 2 S K 2663 - Reverse voltage X l/1 0 . I -JEITA No. -JEITA Classification. 2SA, 2SB, 2SC, 2SD: Transistor 2SJ, 2SK: M OSFFT 2.C ode No. The code specify each packing form.

etd 41

Abstract: 3A, 50V BRIDGE OA-41 400V switching transistor NPN Transistor 15A 400V to3 3A, 50V BRIDGE rectifier BUF410 BUF41 NPN Transistor 10A 400V OA41
Contextual Info: 7 q g q g 3 7 £ fl D o g a s i SGS-THOMSON i Li lf^(S llD(gi S A 3 BUF410/410I BUF410A/410AI S-THOMSON 3GE » FASTSWITCH EASY-TO-DRIVE (ETD) NPN TRANSISTORS PRELIMINARY DATA • HIGH SWITCHING SPEED NPN POWER TRANSISTOR ■ EASY TO DRIVE ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­

ME0412

Abstract: 8822 TRANSISTOR me0411 ME0413 20MHZ 4102 transistor ME4103
Contextual Info: SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO ELECTRONICS FEATURES • H ig h G a i n h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y F ro m lO ^ A • H ig h B re a k d o w n V o l t a g e B V

SMD T26

Abstract: S5VB 60 59 ic 4101 smd MML400 smd 1z SMD Transistors code ic 4063 smd 2sk 4000
Contextual Info: Standard Ordering Quantity and Packing Form Explanation of Packing Form 1. lype No. • S t a n d a r d label spec for ta p e & reel products. Example 1 D1N □ Example 2 2SK 2663 4_ -R e v e rse voltage divided by 10. -JE IT A No. -JE1TA Classification. 2SA, 2SB, 2SC, 2SD: T ran sisto r

NCP18XH103D03RB

Abstract: NCP18WF104D ncp18wf104f12rb NCP18XQ102p03RB NCP18WB473D ncp18wf104d03rb
Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

NCP15WF104D03RC

Abstract: 4557 ic IC 4614 NCP15XH103D03RC 4582 transistor 4557 transistor C 3998 NCP15WB473D03RC murata ntc 47k ohm 3950 thermistor 100K
Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

NTC 100K 3950

Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

2C918HV

Abstract: chip die npn transistor
Contextual Info: MOTOROM Orderthis document by 2C818HVD SEMICONDUCTOR TECHNICAL DATA e 2C918HV Chip NPN Silicon Smal14ignal Transistor ,. .deeigned for VHF operation .11 in tuned amptifier/oscillator applications. ● SmalHgnal Power Gain — 15 dB Min @ 200 MHz . Noise Figure — 6.0 dB Max@ 60MHz

2N2219A MOTOROLA

Abstract: 2N2219A 2N2219AJAN 4101 transistor
Contextual Info: MOTOROU SEMICONDUCTOR TECHNICAL DATA Order this document by 2N2219AJANID a 2N2219AJAN, JTX, JTXV, JANS Processed per MIL4-I 9500/251 NPN Silicon Small-ignal Transistors ., designed for genera~urpose switching and amplifier applications. CASE7$M, SWLE 1 T0205AD ~039

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N63CL Internally Clam ped N-Channel IGBT This Logic Level Insulated G ate B ipolar Transistor IGBT features G ate-E m itter E S D protection, G ate Collector O v e rVoltage Protection from monolithic circuitry for usage as an Ignition

2C2605HV

Abstract: raon
Contextual Info: MOTOROU . Orderthis document by 202605HVID SEMICONDUCTOR TECHNICAL DATA @ 2C2605HV Chi~ PNP Silicon Low+oise Amplifier Transistor . . .deaigned for hig~ain, ● Iowoise ,111, ,11 ,11 a ~ amplfier applications. N.F-= 5.0 dB @ 100 H, “3.0 dB @ 10 kHz MAXIMUM RATINGS

NCP21XV103J03RA

Abstract: NCP21WF104J03RA NCP21WB473J03RA NCP21XM472J03RA NTC thermistor 10k ohm b 3950 NTC thermistor 100k ohm b 3950 3539 transistor Sensor NTC 10K NTC 220 ohm transistor 1012
Contextual Info: PDF catalog is downloaded from!CAUTION the website for of Murata Manufacturing co., ltd. Therefore, it’s specifications areinsubject to change or oursmoking productsand/or in it may be discontinued without advance notice. Please check with our • Please

CEP7030L

Abstract: b703 CEB7030L B7030 p7030l
Contextual Info: JU N 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 6 5 A , Rds on>= 8m Q D @ V gs =10V. Rd s(o n = 12itiQ @ V gs =4.5V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.

SMP20N20

Contextual Info: SMP20N20 CfSiEcanix J -m in c o r p o r a te d N-Channel Enhancement Mode Transistor TO-22QAB TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) (V) ( ii) Id (A) 200 0.16 20 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE ABSOLUTE MAXIMUM RATINGS (Tc = 25 C Unless Otherwise Noted)

2C2484HV

Contextual Info: MOTOROU Order this document by 2C2WHV/D SEMICONDUCTOR TECHNICAL DATA o *,\ Y,+* ,., ‘ ., $ . , ,. t?,~ , .:;: ,11 ,:‘‘>,:R’ IllIlk J L 2C2484HV Chip NPN Silicon Small-ignal Transistor .designed for hig~ain, Iowoiee amptifierapplications. p o

ME0412

Abstract: ME0413 ME0411
Contextual Info: M E4101 • ME4102 • ME4103 M SMALL SIGNAL HIGH GAIN LOW NOISE NPN SILICON PLANAR EPITAXIAL TRANSISTOR MICRO FEATURES • H ig h G a i n M ECH AN ICAL O UTLINE APPLICATIO NS h p g . 1 0 0 - 6 0 0 • E x c e lle n t L i n e a r i t y

p-channel 250V 30A power mosfet

Abstract: p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260
Contextual Info: RAD HARD MOSFETsl RAD HARD TRANSISTORS PAGE Rad Hard Power MOSFET Selection G u id e . 4-3 Rad Hard Data Packages - Harris Power T ra n s is to rs .