41 BF TRANSISTOR Search Results

BF470

Abstract: F506 BF472 Q62702-F498 Q62702-F506 Q62902-B62 Q62902-B63 CBC 548 transistor 2sc 548
Contextual Info: - 3 1 - 2 3 ISIEû ESC D • ô23SbOS QQQ45G2 PNP Silicon Planar Transistors — SIEMENS AKTIENÛESELLSCHAFi02 BF 470 BF 472 °- BF 4 70 and BF 472 are epitaxial PNP silicon planar transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector is conductively connected to the metallic

transistor 2sc 548

Abstract: CBC 548 B
Contextual Info: ISIEÛ 2SC D • ô23SbOS QQQ45G2 PNP Silicon Planar Transistors — SIEMENS AKTIENÛESELLSCHAFi02 BF 470 BF 472 °- BF 4 7 0 and BF 4 7 2 are epitaxial PNP silicon planar transistors in TO 1 2 6 plastic package 1 2 A 3 DIN 41 8 6 9 , sheet 4 . The collector is conductively connected to the metallic

41 BF transistor

Abstract: transistor BF 235 transistor bf 254 869S transistor marking code 41 BF BF869S transistor bf 871s BF871S bf869s Transistor transistor bf 44
Contextual Info: a l TELEFUNKEN ELECTRONIC 17E D • a^EDD^b 000^427 4 ■ AL6G BF 869 S BF 871 S IN electronic Cr»«tiv« Technologies r-33-öS* Silicon NPN Epitaxial Planar RF Transistors Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

K 2545 transistor

Abstract: 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ^ 2 0 0 % 000^407 BF 421S BF 423 S ■¡nmiFWOKIKl electronic CfMtwT«cfwwtoe*e$ Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 421 S complementary to BF 420 S

b0349

Abstract: BF871S BF872S BF872S TELEFUNKEN BF869S BF 872 TRANSISTOR Bf 264 transistor BC 236 41 BF transistor TRANSISTOR C 2570
Contextual Info: TELEFUNKEN ELECTRONIC 17E ì> • fi^EOQ^b 0 Q C m 3 1 BF 870 S • BF 872 S TTHLIlIFÜÎWilîStlGsOelectronic Silicon PNP Epitaxial Planar RF Transistors r- 33-17 Applications: Video-B-class power stages in TV-receivers Features: • High reverse voltage

SOT 86 MARKING 03

Abstract: transistor bf 422 41 BF transistor BF420S transistor bf 422 NPN BH Rf transistor BF 422 92Z MARKING CODE SBF422 BF422S
Contextual Info: I TELEFUNKEN ELECTRONIC 1 ?E D m ß^GDTb DDG^MOB 1 BF 420 S • BF 422 S TIILKPtM iN ] electronic Crtaliv« Ttchootoo« r - Silicon NPN Epitaxial Planar RF Transistors 3 / - * 3 Applications: Video B-class power stages in TV-receivers .Features; • B F4 2 0 S complementary to BF 421 S

DIN125A

Abstract: transistor bc 470 BF470S DIN41869 din 125a transistor Al6 a02 Transistor rf TRANSISTOR G13 transistor marking code AL BF472
Contextual Info: I TELEFUNKEN ELECTRONIC 1?E D m IALGÛ fi^SOOlb O D O ^ I S fl BF 4 7 0 S B F 472 S •¡mOJKFÜiiMiIN electronic Ct m ■ 'Achootogw« T-33-17 Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-ciass power stages in TV-receivers Features:

transistor K 1413

Abstract: D 1413 transistor MARKING NJ CODE SOT 23 k 1413 FET sf-471 TRANSISTOR D 471 BF471S BF469S BF470S S110
Contextual Info: .I TELEFUNKEN ELECTRONIC 17E D • ÛTSOCHb o o o i m i BF 469Ö BF 471 S ‘¡nUilPMKIKi electronic Creaiiv* techootojK» T * 3 2 -O S “ Silicon NPN Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 469 S complementary to BF470S

IC 41 BF

Abstract: BF254 marking code 41 BF TO92 marking code 41 BF BF255 IS420 81-common BF-255 Q62702-F202 bf 37
Contextual Info: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 — Q62702-F201 Q62702-F202 Pin Configuration 1 2 3 E C Package1 B TO-92 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage

BF255

Abstract: IC 41 BF BF254 IS420 81-common Q62702-F201 Q62702-F202 marking code 41 BF TO92
Contextual Info: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 - Q62702-F201 Q62702-F202 Pin Configural ion 1 2 3 C E Package1 B TO-92 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage

C 2577 transistor

Abstract: TRANSISTOR C 2577 marking EB 202 transistor BF885S transistor MARKING CODE RJ TRANSISTOR Bf 264 transistor bf 885 12A3 T0126 BF transistor
Contextual Info: TELEFUNKEN ELECTRONIC 17E » • fl^ OCnb QOGTMB^ 0 1 BF 885 S miHNIMCSlIM electronic Crtttn* T«cbnotoö*s Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages In TV receivers Features: • High reverse voltage • No frFE-drift dependent of temperature

Contextual Info: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 - Q62702-F201 Q62702-F202 Pin Configuration 1 2 3 C E Package1 B TO-92 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage

w26c

Abstract: B120Cnb B0551 Transistor S 2517 BF 238 transistor transistor marking code 41 BF 883S 12A3 T0126 15A3DIN
Contextual Info: « I TELEFUNKEN ELECTRONIC 17E ]> • 000^35 * BF 883 S TTlILilFISSMIISlM electronic Crutivelfchnotogies T-22-06~ Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /»-drift dependent of temperature

transistor Bc 542

Abstract: transistor bc 564 marking EB 202 transistor transistor A 564 Transistors marking WZ PM564 2574 transistor transistor BF 52 SOT-23 marking aeg 883S
Contextual Info: « I TELEFUNKEN ELECTRONIC 17E D 0 *1 2 0 0 ^ O D D ^ S * BF 883 S TT1 IL1 IRUIMIKI1M electronic C ru fta Ttahnofog*« T -3 3 -0 € T Silicon NPN Epitaxial Planar RF Transistor Applications: Video B-class power stages in TV receivers Features: No /?F£-drift dependent of temperature

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

TFK diodes BYW 76

Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35

BF241

Abstract: IC 41 BF bf240 TFK 241 bf 241 Kleine transistor bf UCB 10 Scans-0010445
Contextual Info: BF 240 * BF 241 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: BF 240: G eregelte AM- u. FM -Verstärkerstufen in Em itterschaltung BF 241 : AM- u. FM -Verstärkerstufen in Em itterschaltung Applications: BF 240: C ontrolled AM and FM am p lifier stages in com m on em itter configuration

TRANSISTOR T 410

Abstract: abf410 DSG52 922S BF410D 410c BF410A BF410C Q68000-A5172 Q68000-A5174
Contextual Info: 25C D • fl23SbQS 000447*1 1 ■ S I E G . T'-'il-zS' Low-Noise N-channel Junction Field-Effect Transistor for RF Applications D 79 BF 410 A BF 410 B BF 410 C BF 410 D SIEMENS AKTIENGESELLSCHAF BF 4 1 0 A, B, C, and D are asymmetric epitaxial planar N-channel junction field-effect

BF 184 transistor

Abstract: BF457 bf459 IC 41 BF transistors 458
Contextual Info: BF 457 BF 458 SILICON P LA N A R NPIN BF 459 PRELIMINARY DATA HIGH VOLTAGE VIDEO AMPLIFIERS The BF: 457, BF 458 and BF 459 are silicon planar epitaxial NPN transistors in Jedec T O -1 26 plastic package. They are particularly intended fo r use as video o u tp u t stages in

Contextual Info: I . . 5SC » • ÛB35bQ5 DQQ4S41 2 « S I E G T '’' Ì ~ Z ’* PNP Silicon RF Transistors BF 847 BF 848 SIEMENS AKTIENGESELLSCHAF 541 ° B F 849 for video and A F output stages BF 847, BF 848, and BF 849 are epitaxial PNP silicon planar transistore in plastic package

BUV48T

Abstract: transistor WW 179 c10A TRANSISTOR transistor bf 179 TCA 321 12A3 D-07 T0126 SOT-23 marking p03 marking va transistors
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • fi'iSOO'îh QDD^SST BUV 48 T miiFMIMIM electronic Creative'ftchnotog*» Silicon NPN Power Transistors Tr *’ 3 3 " i 5 Applications: Switching mode power supply, inverters, motor control and relay driver Features: • In triple diffusion technique

transistor BC 536

Abstract: aeg power base 60 b transistor BU 536 transistor bu 311 MARKING JM T0p3 BU 103A transistor BU536 BC 536 BC 536 transistor
Contextual Info: BU 536 TTdUFHiKiKIiM electronic Creati»Technologies' Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique Short switching time • Glass passivation Power dissipation 62 W • High reverse voltage

Transistor SJ 2517

Abstract: transistor SJ 2518 marking code SJ transistors sj 2518 sj 2517 transistor BF 184 NPN transistor TRANSISTORS CASE X01 buv70 SJ 2517 top marking b3a
Contextual Info: 17E D TELEFUNKEN ELECTRONIC • ODD^SbS BUV70 ■¡nyilFttJlMlM electronic Cr*Miv«■fcchnotogte* T -33-13 Silicon NPN Power Transistors Applications: Motor controls, switching mode power supplies features: • Implantation • • High reverse voltage • Triple diffusion

BF120

Contextual Info: TIP41F; 41AF TIP41BF; 41 CF PHILIPS INTERNATIONAL 5bE J> • 711002b 004352b TOS M P H I N T~33 ~ 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are T IP 4 2 F , T IP 4 2 A F , T IP 42B F and T IP 42C F.