40OV Search Results

k2698

Abstract: toshiba transistor k2698 2SK2698 toshiba 2Sk2698 transistor 2SK2698 SC-65
Contextual Info: TOSHIBA 2SK2698 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2698 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 ^ Q MAY • • •

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

COY11

Abstract: co-120 coy8 CO111
Contextual Info: SHARI= 1SPECNo. 1 E A 0 8 6 0 6 B 1 Sep. 19. 1996 ISSUE: To; ITENTAT i VEI SPECIFICATIONS Product Type 136 SegmentOutputs/33 CommonOutputs LCD Driver built in RAM Model No. LH155A %This tentative specification contains 43 pages including the cover and appendix.

20CR

Contextual Info: Large Sized Alum inum Electrolytic Capacitors t lN R D î CHBWKONl Flat Type • • • Suitable for low profile power supply. Load life: 105°C 2,000 hours Non-solventproof type. CHARACTERISTICS Item Characteristics Rated working voltage Operating temperature

TIP665

Abstract: 2N6128 TIP663 TIP664 tip66 TIP6 P66S
Contextual Info: TEXAS IN ST R hS -COPTO} 8961726 TEXAS I NSTR D lf| □ □ 3 b cl ci 0 COPTO 62C 3 6 9 9 0 D TIP663, TIP664, TIP665 N-P-N DARLINGTON-CONIMECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1 9 8 4 • 15 0 W at 1 0 0 °C Case Temperature T-33-29 2 0 A Continuous Collector Current

irf440

Contextual Info: IOR IRF Series Devices IRF Series Data Sheet T h e IR F D a ta S h e e t d e s c rib e s 32 d e v ic e s , 28 N -C h a n n e l a n d 4 P -C h a n n e l, a ll c o n ta in e d in th e T O -2 Û 4 A A o r T 0 - 2 0 4 A E p a c k a g e . T h is d a ta s h e e t

Contextual Info: Types 32MM/33MM W b b c d i METALLIZED POLYESTER CAPACITORS 32MM iI -J . SPECIFICATIONS /. . . . . Wcscb'; 33MM 11 . AT FEATURES W ra p and fill con stru ction D IE L E C T R IC W IT H S T A N D IN G V O L T A G E 200% of rated voltage applied through a minimum limiting resistance

hm514280

Abstract: HM514280JP8 HM514280ZP-10 F0514
Contextual Info: H M 5 1 4 2 8 0 S e r ie s Preliminary 262,144-Word x 18-Bit Dynamic Random Access Memory • DESCRIPTION HM 514280JP Series The Hitachi HM514280 are CMOS dynamic RAM orga­ nized as 262,144-word x 18-bit. HM514280 have realized higher density, higher performance and various functions by

JTs smd diode

Abstract: TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE smd transistor marking p3 12A p transistor smd 12A transistor smd SMD TRANSISTOR 12a smd transistor marking 1j transistor smd sG SMD TRANSISTOR MARKING P2 STTA1206D/DI/G
Contextual Info: rz7 SGS-THOMSON ^ 7 # M O œ iL E O T M Û S S T T A 1206G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 12A V rrm 600V trr (typ) 28ns Vf (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA­

Contextual Info: , LJnc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF460 500V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET'TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number IRF460

Contextual Info: TOSHIBA GT5G103 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL M O S TYPE GT5G103 Unit in mm STROBE FLASH APPLICATIONS • • • 3rd Generation High Input Impedance Low Saturation Voltage • • Enhancement-Mode 4.5V Gate Drive : VCE sat = 8V(Max.) (IC= 130A>

Contextual Info: DALLAS SEMICONDUCTOR DS1991 Touch MultiKey DS1991 SPE C IA L FEA TU R E S 5 80 « 036- • 1,152-btt secure read/write, nonvolatile memory -0J1 • Secure memory cannot be deciphered without match­ ing 64-tat password • Memory is partitioned into 3 blocks of 384 bits each

K375

Abstract: 100F6
Contextual Info: Preliminary Data Sheet OM120L60SB OMIOOF6OSB OM90L120SB QM70F120SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Cu rre nt. High Voltage 600V An d 1200V. Up To 150 A m p IGBTs With FRED Diodes FEATURES • Includes Internal FRED Diode • Rugged Package Design

Contextual Info: OM6OL6OPB OM50F60PB Preliminary Data Sheet OM45L120PB OM35F12QPB DUAL IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High Cu rre nt, High Voltage 600V A n d 1200V, Up To 75 A m p Dual IGBTs With FRED Dio des FEATURES • • • • • • • Includes Internal FRED Diode

G114

Abstract: IRGMIC50U IRGMIC50UU G114 SOT-23-5
Contextual Info: PD-9.813 International ü r ]Rectifier IRGMIC50U Ultra Fast-Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE • Electrically Isolated • Hermetically Sealed • Simple Drive Requirements V CES = 600V fie*- 20kHz • Latch-proof • UltraFast operation > 10 kHz

Contextual Info: TOSHI BA í D I S C R E T E / O P T O } 9097250 TOSHIBA S t DËTJ t o ^ E S O OODTbOO <DI S C R E T E / O P T O > SILICON NPN TRIPLE DIFFUSED TYPE HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS, Unit in mm SWITCHING REGULATOR APPLICATIONS. HIGH SPEED 'DC-DC CONVERTER APPLICATIONS.

MCR50

Abstract: S180 ET-7001
Contextual Info: Resistors Thick film rectangular MCR50 5025 size: 1 / 2W •F e a tu re s 1) Made of same material as the general purpose chip re­ Both flow and reflow soldering can be used. sistors (MCR10 /1 8 ). 4) ROHM resistors have approved ISO-9001 certifica­ 2) Highly reliable chip resistor

BA100 diode

Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
Contextual Info: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:

K324

Abstract: 70A 1200V IGBTS
Contextual Info: Prelim inary Data Sheet OM120L60SB OMIOOF6OSB OM90L120SB OM70F120SB IGBTS IN HERMETIC ISOLATED POWER BLOCK PACKAGES High C u r r e n t , Hi gh V ol ta g e 6 0 0 V A n d 1200V. Up To 150 A m p I G B T s W ith F R E D D i o d e s FEATURES Includes Internal FRED Diode