40N60B Search Results

40N60B Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
40N60B3		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	29.6KB	1

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IXYS Corporation IXGH40N60B IGBT 600V 75A TO-247AD
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DigiKey	IXGH40N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXST40N60B IGBT PT 600V 75A TO-268AA
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IXYS Corporation IXGR40N60B IGBT 600V 70A ISOPLUS247
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DigiKey	IXGR40N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXSH40N60B IGBT PT 600V 75A TO-247AD
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DigiKey	IXSH40N60B	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
onsemi HGTG40N60B3 IGBT 600V 70A TO-247-3
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DigiKey	HGTG40N60B3	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	HGTG40N60B3	Bulk			30	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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40N60B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
40n60 Abstract: 40N60B2D1 40N60B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching	Original	ISOPLUS247TM 40N60B2 40N60B2D1 IC110 065B1 728B1 123B1 40n60 40N60B2D1	PDF
Contextual Info: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 TM package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	PLUS247 40N60BD1 40N60BD1 247TM	PDF
Contextual Info: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600	Original	247TM 40N60BD1	PDF
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs Electrically Isolated Back Surface VCES IC25 VCE(sat) tfi typ = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet	Original	ISOPLUS247TM 40N60B2 40N60B2D1 IC110 ISOPLUS247 E153432 IF110 2x31-06B	PDF
diode b34 Abstract: b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor 40N60BD1 C110 Contextual Info: Advanced Technical Information HiPerFAST TM IGBT with Diode IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient	Original	40N60BD1 PLUS247 diode b34 b34 diode b34 datasheet b34 844 PLUS247 B34 on B34 transistor C110	PDF
40N60BD1 Abstract: 40N60B 40N60 IXGR40N60BD1 IXGR40N60 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS247TM 40N60B 40N60BD1 lead40N60BD1) 728B1 40N60B 40N60 IXGR40N60BD1 IXGR40N60	PDF
TO-264 Abstract: 40N60BD1 PLUS247 Contextual Info: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode TM PLUS247 package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	40N60BD1 PLUS247 TO-264 40N60BD1 PLUS247	PDF
40N60BD1 Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600	Original	247TM 40N60BD1 728B1	PDF
Contextual Info: HiPerFASTTM IGBT IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching VCES IC25 VCE sat tfi typ = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	40N60B2D1 IC110 O-268 O-247 728B1 123B1 728B1 065B1	PDF
Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IXGR 40N60B IXGR 40N60BD1 IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.1 V = 180 ns (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	ISOPLUS247TM 40N60B 40N60BD1 728B1	PDF
40N60BD1 Abstract: PLUS247 Contextual Info: IXGX 40N60BD1 VCES IC25 VCE sat tfi(typ) HiPerFAST TM IGBT with Diode = 600 V = 75 A = 2.1 V = 180 ns Preliminary Data Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20	Original	40N60BD1 IC110 PLUS247 728B1 PLUS247	PDF
40N60B2D1 Abstract: IXGH40N60B2D1 40n60b2d 065B1 40n60 40N60B2 Contextual Info: HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2D1 IXGT 40N60B2D1 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching = 600 V = 75 A < 1.7 V = 82 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C	Original	40N60B2D1 IC110 O-268 728B1 123B1 728B1 065B1 40N60B2D1 IXGH40N60B2D1 40n60b2d 40n60 40N60B2	PDF
IXGR40N60B2D1 Abstract: 40N60B2D1 40N60B2 40N60 IXGR40N60 40n60b IF110 ISOPLUS247 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet	Original	ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 2x31-06B IXGR40N60B2D1 40N60B2D1 40N60B2 40N60 IXGR40N60 40n60b IF110 ISOPLUS247	PDF
40N60B2 Abstract: IXGH40N60B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	40N60B2 IC110 O-268 40N60B2 IXGH40N60B2	PDF

Contextual Info: Advance Technical Data HiPerFASTTM IGBT IXGH 40N60B2 IXGT 40N60B2 Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600	Original	40N60B2 IC110 O-268 O-247	PDF
Contextual Info: IGBT with Diode ISOPLUS 247TM IXSR 40N60BD1 VCES IC25 VCE sat (Electrically Isolated Backside) tfi(typ) = 600 V = 70 A = 2.2 V = 120 ns Short Circuit SOA Capability Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600	Original	247TM 40N60BD1 728B1	PDF
Contextual Info: = IXSH 40N60B VCES = IXST 40N60B IC25 VCE sat = High Speed IGBT Short Circuit SOA Capability tfi typ 600V 75A 2.2V = 100 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V	Original	40N60B	PDF
40N60B Abstract: C110 IXGH40N60B IXGT40N60B packages to247 footprint jedec MS-150 Contextual Info: HiPerFASTTM IGBT IXGH 40N60B IXGT 40N60B VCES IC25 VCE sat tfi = 600 V = 75 A = 2.1 V = 180 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V	Original	40N60B O-247 IXGT40N60B O-268 IXGH40N60B) 40N60B C110 IXGH40N60B IXGT40N60B packages to247 footprint jedec MS-150	PDF
40n60b Contextual Info: Advanced Technical Information IXGR 40N60BD1 IGBT with Diode ISOPLUS247TM package VCES IC25 VCE sat tfi(typ) Short Circuit SOA Capability (Electrically Isolated Back Side) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	40N60BD1 ISOPLUS247TM 40n60b	PDF
ixgr40n60b2d1 Abstract: IXGR40N60B2 IXGR40N60 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet	Original	ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 IXGR40N60B2D1) 2x31-06B ixgr40n60b2d1 IXGR40N60B2 IXGR40N60	PDF
ixgr40n60b2d1 Contextual Info: HiPerFASTTM IGBT ISOPLUS247TM VCES IC25 VCE sat tfi typ IXGR 40N60B2 IXGR 40N60B2D1 C2-Class High Speed IGBTs (Electrically Isolated Back Surface) = 600 V = 75 A = 1.9 V = 82 ns Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet	Original	ISOPLUS247TM 40N60B2 40N60B2D1 IC110 IF110 IXGR40N60B2D1) 2x31-06B ixgr40n60b2d1	PDF
40N60BD1 Abstract: 40n60b Contextual Info: Advanced Technical Information IXSR 40N60BD1 IGBT with Diode ISOPLUS 247TM VCES IC25 VCE sat tfi(typ) (Electrically Isolated Backside) Short Circuit SOA Capability Symbol Test Conditions TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600	Original	40N60BD1 247TM 40N60BD1 40n60b	PDF
Contextual Info: □IXYS Advanced Technical Information IXSH IXST High Speed IGBT 40N60B 40N60B Short Circuit SOA Capability VCES = 600 V IC25 = 75 A V CE sat = 2.2 V t Test C onditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V v GES	OCR Scan	40N60B O-247	PDF
P 1010 Abstract: AL 102 074d Contextual Info: □IXYS Advanced Technical Information IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 package ^fi typ Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C, limited by leads	OCR Scan	40N60BD1 PLUS247â O-247 P 1010 AL 102 074d	PDF

40N60B Search Results

40N60B Datasheets (1)

40N60B Price and Stock

IXYS Corporation IXGH40N60B

IXYS Corporation IXST40N60B

IXYS Corporation IXGR40N60B

IXYS Corporation IXSH40N60B

onsemi HGTG40N60B3

40N60B Datasheets Context Search

40n60

diode b34

40N60BD1

TO-264

40N60BD1

40N60BD1

40N60B2D1

IXGR40N60B2D1

40N60B2

40N60B

40n60b

ixgr40n60b2d1

ixgr40n60b2d1

40N60BD1

P 1010