40MW Search Results

2SC994

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC994 Unit in mm VHF BANO POWER AMPLIFIER APPLICATIONS. 09.Z9UAX. FEATURES : Output Power '• Po=0.95W Min. ( f=l75MHz, VCC=13.5V, Pi=40mW ) Í¿Q.45 05 .C 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING vCBO

Contextual Info: LM4912 LM4912 Stereo 40mW Low Noise Headphone Amplifier Literature Number: SNAS175D October 20, 2011 Stereo 40mW Low Noise Headphone Amplifier • Output Power at 1kHz with VDD = 3V, 1% THD General Description The LM4912 is an stereo audio power amplifier capable of

TR 104 TRANSFORMER

Contextual Info: REV. S ta tu s REVISION 1 04/06/98 TS AUDIO COUPLING MINIATURE ENCAPSULATED TRANSFORMER DESIGNED TO OPERATE 40mW MAX IN PRIMARY AND REFLECT A PRIMARY SOURCE IMPEDANCE OF APPROXIMATELY 5KQCT WITH 2KQCT LOAD ON SECONDARY. C£ Ld m = A. Electrical Specifications 20° C)

hm62256

Contextual Info: HM62256 Series 32768-word x 8-bit High Speed CMOS Static RAM FEATURES H M 6 2 2 5 6 P S eries High Speed: Fast Access Time 85/100/120/150ns max. Low Power Standby and Low Power Operation; Standby: 200/iW (typ)/10/LiW (typ) (L-version), Operation: 40mW (typ.) ( f = 1MHz)

TQFP48

Abstract: TSA0801 TSA1001 TSA1002 TSA1201 TSA1201IF TSA1201IFT marking code c41 SMD ic
Contextual Info: TSA1201 12-BIT, 50MSPS, 150mW A/D CONVERTER • 40mW @5Msps, 150mW @ 50Msps ■ 2.5V supply voltage with 2.5V/3.3V compatibility for digital I/O Input range: 2Vpp differential SFDR up to 77dB @ 50Msps, Fin=15MHz ENOB up to10.5 bits @ 50Msps, Fin=15MHz Built-in reference voltage with external bias

AN2151

Abstract: KP1040 ST232 TS4975 TS4975EIJT PHG1
Contextual Info: TS4975 Stereo Headphone Drive Amplifier with Digital Volume Control via I2C Bus • Operating from VCC = 2.5V to 5.5V ■ I²C bus control interface ■ 40mW output power @ VCC = 3.3V, THD = 1%, F = 1kHz, with 16Ω load ■ Ultra-low consumption in stdby mode: 0.6µA

980NM data sheet

Abstract: HI-1060 Fitel FOL
Contextual Info: Data Sheet FOL 0903Mx-Axxx March, 2001 FOL0903Mx-Axx: 40mw – 20mW Coaxial Uncooled 980nm pump laser module Applications • Channel Single-Wavelength Amplifiers • Channel Gain Controller/ Equalizer Absolute Maximum Ratings Parameters Storage Temperature

1550nm laser diode

Abstract: 1550nm communication laser diode 1550 communication laser diode FAH0476 1310nm otdr
Contextual Info: FAH0476 Series Rev.3: [Mar.2005] 1310nm/40mW, 1550nm/60mW Dual FP Laser Diode Modules for OTDR Data Sheet Preliminary FAH0476 1. DESCRIPTION The FAH0476 consists of a 1310nm & 1550nm FP- LD, a single-mode fiber and a SC/PC connector and a dual LD package.

Contextual Info: iplC om linear ÏÜLdCorporation Fast Settling, Video Op Amp with Disable CLC41 J fe - m Ê lr n a . FEATURES typical • -3dB bandwidth of 200MHz • 0.05% settling in 12ns • low power, 160mW (40mW disabled) • low distortion, -60dBc at 20MHz • fast disable (200ns)

62256LP-12

Abstract: AKM62256-10 62256FP-12T 62256P
Contextual Info: AK M 62256 Series 32768-word x 8-bit High Speed CMOS Static RAM • • FEATURES High Speed: Fast Access Time 85/100/120/150ns max. • Low Power Standby and Low Power Operation; • Standby: 200^tW {t y p ) /1 0/uW (typ) (L-version), Operation: 40mW (typ.) (f = 1MHz)

Features of laser diodes

Abstract: ML64116R ML6XX16
Contextual Info: MITSUBISHI LASER DIODES ML6XX16 SERIES AIGaAs LASER DIODES TYPE NAME FEATURES DISCRIPTION ML6XX16 series are high power AIGaAs semiconductor laser • O u tp u t 30mW CW 40mW (pulse) diodes • S h o r t astigmatic distance w hich provides a stable, single

OmniVision CMOS Camera Module

Abstract: IC AL 6001 cmos NTSC IMAGE SENSOR OmniVision Technologies 20 pin IC AL 6001 omnivision OV5116 OV5116N SQ cmos sensor 28-pin lcc OV5116MD
Contextual Info: OV5116N OV5116N SINGLE IC CMOS MONOCHROME CAMERA WITH NTSC ANALOG OUTPUT Features Single chip 1/4 inch format video image sensor „ External frame sync capability „ EIA/NTSC output „ 40mw on-chip power consumption „ Selectable mirror image „ External data acquisition support

Contextual Info: DIGITRON SEMICONDUCTORS 1N5333B-1N5388B 5 WATT ZENER DIODES MAXIMUM RATINGS Rating Value Operating Temperature -65 to +150°C Storage Temperature -65 to +150°C DC Power Dissipation 5 Watts Power Derating 40mW/°C over 75°C Forward Voltage @ 1.0 amp 1.2 Volts max

Contextual Info: / T L i n e A LT1381 ß TECHNOLOGY Low Power 5V RS232 Dual Driver/Receiver with 0.1 jxF Capacitors Fcm uncs D C SC R IPTIO n • ESD Protection over ±10kV ■ Low Cost ■ Uses Small Capacitors: 0.1 |iF ■ CMOS Comparable Low Power: 40mW ■ Operates from a Single 5V Supply

"Analog Converters"

Abstract: AD7542 AD7543
Contextual Info: Vr ef CUB m AD7542 Nonlinearity: ±1/2LSB Tmi„ to Tm.„ Low Gain Drift: 2ppm/°C typ, 5ppm/°C max Microprocessor Compatible Full 4-Quadrant Multiplication Low Multiplying Feedthrough Low Power Dissipation: 40mW max Small Size: 16-Pin DIP Page Vol. I 9-215

90T03P

Abstract: se5040 AN2151 KP1040 ST232 TS4975 TS4975EIJT PHG1
Contextual Info: TS4975 Stereo Headphone Drive Amplifier with Digital Volume Control via I2C Bus • Operating from VCC = 2.5V to 5.5V ■ I²C bus control interface ■ 40mW output power @ Vcc=3.3V, THD=1%, F=1kHz, with 16Ω load ■ Ultra-low consumption in stdby mode: 0.6 µA

TLA704

Abstract: TQFP48 TSA0801 TSA1001 TSA1002 TSA1201 TSA1201IF TSA1201IFT SA1201
Contextual Info: TSA1201 12-BIT, 50MSPS, 150mW A/D CONVERTER • 0.5Msps to 50Msps sampling frequency ■ 40mW @5Msps, 150mW @ 50Msps ■ 2.5V supply voltage with 2.5V/3.3V compati■ ■ ■ ■ ■ bility for digital I/O Input range: 2Vpp differential SFDR up to 77dB @ 50Msps, Fin=15MHz

Contextual Info: GLASS PASSIVATION 1505 Thick Film Chip Resistor Standard Grade, Wraparound WRAPAROUND TERMINATIONS RESISTOR FILM 96% ALUMINA CHIP PERFORMANCE CHARACTERISTICS 1W-40MW 0.5%,1%, 2%, 5%,10% ±100, ±200, ±300 ppm 90.2°C/W 330 mW 125 Volts CURRENT NOISE 1 +/- 0.5% limited availability

1550nm FP Laser Diode with butterfly pin package

Abstract: W3347 w3112 optical fiber 1525 nm W5817 W4135 laser DFB 1550nm 10gb W3819 w5252
Contextual Info: Electronics Components OL5104L-40-Wnnnn ODLOL5104L-40-Wnnnn-02 Issue Date:Aug. 2002 Preliminary 1550nm/40mW Laser Diode Butterfly Module with PMF, Built in Cooler, Isolator. 1. DESCRIPTION OL5104L-40-Wnnnn is a 1550nm Laser Diode in Butterfly package with PMF.

Contextual Info: u r m TECHNOLOGY F€RTUR€S • ESD Protection over ±10kV ■ Low Cost ■ Uses Small Capacitors: 0.1 |iF ■ CMOS Comparable Low Power: 40mW ■ Operates from a Single 5V Supply ■ 120kBaud Operation for RL = 3k, Cl = 2500pF ■ 250kBaud Operation for RL = 3k, Cl = 10OOpF

Contextual Info: TSA0801 8-BIT, 40MSPS, 40mW A/D CONVERTER • 8-bit A/D converter in deep submicron CMOS ■ ■ ■ ■ ■ ■ ■ ■ ORDER CODE Temperature Range Part Number Conditioning Marking TSA080 1CF 0°C to +70°C TQFP48 Tray SA0801C 0°C to +70°C TQFP48 Tape & Reel

FS49

Abstract: MAX5155 transistor SMD MARKING CODE 772
Contextual Info: TSA1201 12-BIT, 50MSPS, 150mW A/D CONVERTER • 40mW @5Msps, 150mW @ 50Msps ■ 2.5V supply voltage with 2.5V/3.3V compatibility for digital I/O Input range: 2Vpp differential SFDR up to 77dB @ 50Msps, Fin=15MHz ENOB up to10.5 bits @ 50Msps, Fin=15MHz Built-in reference voltage with external bias

Contextual Info: REV. S t a t u s REVISION 0 8 /0 3 /9 2 TS REVISION A CHANGED FORMAT 0 5 /1 8 /0 0 TS TELECOMMUNICATION COUPLING MINIATURE ENCAPSULATED TRANSFORMER DESIGNED TO OPERATE 40mW MAX IN PRIMARY AND REFLECT A PRIMARY SOURCE IMPEDANCE OF APPROXIMATELY 10KQCT WITH 4.0Q LOAD ON SECONDARY.

MET-44

Contextual Info: REV. S ta tu s REVISION 0 4 /2 9 /9 6 TS AUDIO COUPLING MINIATURE ENCAPSULATED TRANSFORMER DESIGNED TO OPERATE 40mW MAX IN SECONDARY AND REFLECT A PRIMARY SO URCE IMPEDANCE OF APPROXIMATELY 3 0 00 CT WITH 12Q LOAD ON SECONDARY. cm Ld CD I A. Electrical Specifications 20 ° C