40A 350V POWER DIODE Search Results

Contextual Info: FFA40UP35S tm 40A, 350V Ultrafast Diode Features • Ultrafast recovery, Trr < 55 ns @ IF = 40 A The FFA40UP35S is an utrafast Diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping Diodes in a variety of switching

DIODE h4b

Abstract: diode sg 45 APT2X31D50J pearson 411
Contextual Info: K2 A2 K1 ADVANCED POW ER Te c h n o lo g y * APT2X31D60J APT2X31D50J Al 600V S00V 30A 30A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY DUAL RECTIFIER DIODES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode -Switchmode Power Supply

sef340

Abstract: SEF341
Contextual Info: S G S- THOMSON D7E D 0017=5^7 I 73C l 7494 J C It: - I s% îî-, ; ’ r i , ~T; : i 5 I “ .•> ÏÂ Î a N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field

Contextual Info: Ultrafast Rectifier FFA40UP35S tm Features 40A, 350V Ultrafast Rectifier • High Speed Switching, rrt < 55ns @ IF = 40A • High Reverse Voltage and High Reliability The FFA40UP35S is utrafast rectifier with low forward voltage drop. It is silicon nitride passivated ion-implanted epitaxial planar

F40UP35S

Abstract: FFA40UP35S FFA40UP35STU DSA007099
Contextual Info: Ultrafast Rectifier FFA40UP35S tm Features 40A, 350V Ultrafast Rectifier • High Speed Switching, trr < 55ns @ IF = 40A The FFA40UP35S is utrafast rectifier with low forward voltage drop. It is silicon nitride passivated ion-implanted epitaxial planar construction.

IXGH20N60AU1

Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient

20N60A

Abstract: D-68623 20N60U1 20N60AU
Contextual Info: Not for new designs Low VCE sat IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 VCES IC25 VCE(sat) 600 V 600 V 40 A 40 A 2.5 V 3.0 V Combi Packs Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

mj 340

Abstract: MJ340 50n60 50N60AU1 IXSX50N60AU1 IXSX50N60AU1S
Contextual Info: Preliminary data VCES = 600 V IXSX50N60AU1 = 75 A IXSX50N60AU1S I C25 VCE sat = 2.7 V IGBT with Diode Combi Pack Short Circuit SOA Capability Symbol TO-247 Hole-less SMD (50N60AU1S) Test Conditions C (TAB) G Maximum Ratings E VCES TJ = 25°C to 150°C 600

Contextual Info: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20

mj 340

Abstract: MJ340 IXSK50N60AU1 D-68623 50N60AU1
Contextual Info: IGBT with Diode IXSK 50N60AU1 VCES IC25 VCE sat Combi Pack = 600 V = 75 A = 2.7 V Short Circuit SOA Capability Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 600 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V V GES Continuous ±20 V V GEM

Contextual Info: APTGU40DH60T Asymmetrical - Bridge PT IGBT Power Module VCES = 600V IC = 40A @ Tc = 80°C Application • • • Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Power MOS 7 Punch Through PT IGBT - Low conduction loss

Contextual Info: MQFL-270L-05S Single Output H igH R eliability DC-DC C onveRteR 65-475V 5V 15A 81% @ 7.5A /86% @ 15A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 65-350V F ull P oweR o PeRation : -55ºC to +125ºC The MilQor@ series of high-reliability DC-DC converters

60N60A

Abstract: c5021-0
Contextual Info: ÖIXYS HiPerFAST IGBT with Diode IXGK 50N60AU1 V CES ^C25 V CE sat tfi Symbol Test Conditions V „„ T 25° C to 150° C T, 2 5 °C to 1 5 0 °C ;F L Maximum Ratings 600 V 600 V Continuous +20 V Transient +30 V T c = 25° C, limited by leads 75 A ^C90

Contextual Info: MQFL-270L-05S Single Output H igH R eliability DC-DC C onveRteR 65-475V 5V 15A 81% @ 7.5A /86% @ 15A Continuous Input Transient Input Output Output Efficiency a pu d bl va ic n at ce io d n 65-350V F ull P oweR o PeRation : -55ºC to +125ºC The MilQor series of high-reliability DC-DC converters

h40t60

Contextual Info: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Trench and Fieldstop technology for 600 V applications offers :

h40t60

Abstract: igbt 400V 40A IHW40N60T PG-TO-247-3
Contextual Info: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications

Contextual Info: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications

h40t60

Abstract: IHW40N60T PG-TO-247-3-21
Contextual Info: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications

h40t60

Abstract: 40a 350v power diode
Contextual Info: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Trench and Fieldstop technology for 600 V applications offers :

Contextual Info: Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V applications

H40T60B

Abstract: h40t60 IHW40T60 OF IGBT 1000A 1000V PG-TO-247-3
Contextual Info: IHW40T60 q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop®-technology with soft, fast recovery anti-parallel EmCon HE diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum junction temperature 175 °C • Short circuit withstand time – 5µs

Contextual Info: IHW40T60 q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop®-technology with soft, fast recovery anti-parallel EmCon HE diode Features: • Very low VCE sat 1.5 V (typ.) • Maximum junction temperature 175 °C • Short circuit withstand time – 5µs

IRF420

Abstract: IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A VN5002A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

VN64GA

Abstract: 1rf820 IRF740 VN1001A 2N6658 IRF120 IRF122 IRF130 IRF132 IRF140
Contextual Info: MOSPOWER Selector Guide MOSPOWER Selector Guide continued N-Channel MOSPOWER (Continued) Device FiC ^ T ' u TO-3 TO-22QAB Breakdown Voltage (Volts) 100 100 100 100 100 100 100 100 100 100 90 90 90 8CI 80 60 6Cl 60 60 60 60 60 60 60 60 60 60 60 40 40 35 35