40V77 Search Results
40V77 Price and Stock
Nexperia PESD1LINZESD Protection Diodes / TVS Diodes ESD 24V BI |
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PESD1LINZ | Reel | 30,000 |
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Vishay Intertechnologies MAL213837339E3Aluminum Electrolytic Capacitors - Axial Leaded 33uF 40V 20% Axial |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MAL213837339E3 | Bulk | 1,000 |
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Vishay Intertechnologies MAL213827339E3Aluminum Electrolytic Capacitors - Axial Leaded 33uF 40V 20% Axial |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MAL213827339E3 | Bulk | 1,000 |
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40V77 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MGFC40V7785Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V7785 7 .7 — 8.5GH z BAND 10W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 is an internally impedance-matched GaAs power F E T especially designed fo r use in 7 . 7 —8 . 5 G H z band am plifiers. The herm etically sealed metal-ceramic |
OCR Scan |
MGFC40V7785 MGFC40V7785 ltem-01: | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V77 8 5 A PREU ate 7 .7 —8 .5 G H z BAND 1 0 W INTERNA LLY M ATCHED GaAs FE T Som eP*' DESCRIPTION T h e M G F C 4 0 V 7 7 8 5 A is an internally im p e d a n c e -m a tc h e d GaAs pow er F E T especially designed fo r use in 7 . 7 — 8 . 5 |
OCR Scan |
40V77 | |
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Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 40V 7785B •b e U 7 .7 —8.5G H z BAND 1 0 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 4 0 V 7 7 8 5 B is an internally im p e d a n c e-m a tc h e d GaAs pow er F E T especially designed fo r use in 7 . 7 — 8 . 5 |
OCR Scan |
7785B |