409L Search Results

409L

Abstract: DG408L DG408LDQ-T1-E3 DG408LDY DG409L DG409LDY DG408LDY-T1-E3
Contextual Info: DG408L/409L Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers DESCRIPTION FEATURES The DG408L/409L are low voltage pin-for-pin compatible companion devices to the industry standard DG408/409 with improved performance. Using BiCMOS wafer fabrication technology allows the

H409

Contextual Info: 409LP4 / 409LP4E v02.0606 AMPLIFIERS - SMT 5 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.8 GHz applications: Gain: 31 dB • WiMAX 802.16 2% EVM @ Pout = +22 dBm

500 watt amplifier schematic

Abstract: c3834 HMC409LP4 HMC409LP4E
Contextual Info: 409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.8 GHz applications: Gain: 31 dB • WiMAX 802.16 2% EVM @ Pout = +22 dBm 40% PAE @ +32.5 dBm pout

426L1

Abstract: 721L1 409L1 620L1 621L1 412a 432I2 726L1 620-L1 410G2
Contextual Info: 4. Options Overview All versions: High-side switch, input protection, ESD protection, reverse battery protection monolithic devices with 150 Ω in GND connection Type 307 308 412A 413A 412B 410D/D2 410E/E2 410F/F2 410G 410H 432I2 409L1 707 412B2 432D/D2 432E/E2 432F/F2 410G2 410H2

DG408L

Abstract: 409L DG409L DG409LDY DG408LDQ DG408LDY
Contextual Info: DG408L/409L New Product Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers FEATURES BENEFITS APPLICATIONS D Pin-For-Pin compatibility with DG408/409 D 2.7- to 12-V Single Supply or "3- to "6-V Dual Supply Operation D Lower On-Resistance: rDS on – 17 W Typ.

409L

Abstract: DG408L DG408LDY -E3 DG408LDQ DG408LDY DG409L
Contextual Info: DG408L/409L Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers FEATURES BENEFITS APPLICATIONS D Pin-For-Pin compatibility with DG408/409 D 2.7- to 12-V Single Supply or "3- to "6-V Dual Supply Operation D Lower On-Resistance: rDS on - 17 W Typ.

DG408L

Contextual Info: DG408L/409L New Product Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers FEATURES BENEFITS APPLICATIONS D Pin-For-Pin compatibility with DG408/409 D 2.7- to 12-V Single Supply or "3- to "6-V Dual Supply Operation D Lower On-Resistance: rDS on – 17 W Typ.

Contextual Info: 409LP4 / 409LP4E v01.0705 AMPLIFIERS - SMT 8 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.8 GHz applications: Gain: 31 dB • WiMAX 802.16 2% EVM @ Pout = +22 dBm

DG408L

Contextual Info: DG408L/409L Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers FEATURES BENEFITS APPLICATIONS D Pin-For-Pin compatibility with DG408/409 D 2.7- to 12-V Single Supply or "3- to "6-V Dual Supply Operation D Lower On-Resistance: rDS on - 17 W Typ.

h409

Abstract: 500 watt power circuit diagram transistor amplifier 3 ghz HMC409LP4 HMC409LP4E
Contextual Info: 409LP4 / 409LP4E v01.0705 AMPLIFIERS - SMT 5 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.8 GHz applications: Gain: 31 dB • WiMAX 802.16 2% EVM @ Pout = +22 dBm

DG408L

Abstract: 409L DG408LDY DG409L DG409LDY
Contextual Info: DG408L/409L Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers DESCRIPTION FEATURES The DG408L/409L are low voltage pin-for-pin compatible companion devices to the industry standard DG408/409 with improved performance. Using BiCMOS wafer fabrication technology allows the

Contextual Info: 409LP4 / 409LP4E v03.0710 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Applications Features This ampliier is ideal for use as a power ampliier for 3.3 - 3.8 GHz applications: Gain: 31 dB • wimAX 802.16 2% eVm @ pout = +22 dBm 40% pAe @ +32.5 dBm pout

500 watt power circuit diagram

Abstract: isolation amplifiers HMC409LP4 HMC409LP4E
Contextual Info: 409LP4 / 409LP4E v02.0607 6 GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Applications Features This amplifier is ideal for use as a power amplifier for 3.3 - 3.8 GHz applications: Gain: 31 dB • WiMAX 802.16 2% EVM @ Pout = +22 dBm 40% PAE @ +32.5 dBm pout

21421

Abstract: DG408L
Contextual Info: DG408L/409L Vishay Siliconix Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers FEATURES BENEFITS APPLICATIONS D Pin-For-Pin compatibility with DG408/409 D 2.7- to 12-V Single Supply or "3- to "6-V Dual Supply Operation D Lower On-Resistance: rDS on - 17 W Typ.

BC548 TRANSISTOR REPLACEMENT

Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
Contextual Info: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction

TGW-R-5309-10

Abstract: T3-R-6308 TP201423 T3-46T08-LD stanag 3837 T3-4020-36LD T3-4120-36LD twinax M39029 MIL-STD-1553 cable connector T3-46T08
Contextual Info: DATA BUS CONNECTORS STORES M ANAGEM ENT CONNECTORS by P Y LE -N A TIO N A L MIL-STD-1553 Pyle-National has a long history as a quality manufacturer of circular, military specification connectors. From our connector series qualified to MIL-C-38999 Series III, Pyle has utilized

409L1

Abstract: BTS 304 E-3230 409-L1 C67078-A5007-A7 Q67060-S6107-A2 612N1 432F2 621L1 426L1
Contextual Info: SIEM EN S List of Types in Alphanumerical Order Type Ordering Cocje Page BSP 75 BSP 350 BSP 365 on request Q67000-S227 on request 487 492 BSP 450 Q67000-S266 Q67000-S271 496 BSP 452 BSP 550 Q67000-S311 506 BTS 100 BTS 100 E3044 C67078-A5007-A2 255 255 BTS 100 E3045

BTS412A

Abstract: PROFET BTS 410E profet 409L1 410e2 PROFET-. Semiconductor Group QB-V850ESJX3H BTS410E BTS410E2 410D
Contextual Info:  PROFET Functional Description & Application Notes Semiconductor Group 04.Mar.97 PROFET-Description List of Contents Page 1. Basics. 1-1 2. PROFET Functional Description . 2-1

409LT

Abstract: marking 9l sot23
Contextual Info: SILICON EPICAP DIODES 409LT1* . . . desig n ed fo r general fre q u e n cy c o n tro l and tu n in g a p p lic a tio n s ; p ro v id in g so lid -sta te re lia b ility in re p la ce m en t o f m echanical tu n in g m ethods. MV409* • H igh Q w ith G uaranteed M in im u m Values at VHF Frequencies

IDT54FCT373DB

Abstract: 54FCT373 P54PCT373DMB P54PCT373DM 5962-87644 IDT54FCT373ADB
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-QA A Add vendor CAGE 75569. Add device type 02. Add case outline S. Technical changes in table I. Editorial changes throughout. 89 MAR 21 APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV A A A A A A A A A A A A SHEET

742T

Abstract: 762T 772t 428L2 742R 6163D 410F2 752R 409L1 452R
Contextual Info: PROFET Selection Tree ® ® High-Current-PROFET , PROFET , mini-PROFET Vbb AZ = 60V Vbb(AZ) = 41V Vbb < 28V Diagnosis yes ® no Diagnosis status sense Open Load off on Number of Channels one two Number of Channels four one Standard Package BSP 742R BSP 752R

412a

Abstract: BTS307 721L1 726L1 409L1 426L1 432F 640S2 612n1 711-L1
Contextual Info: PROFET-Description 3. Truth Table Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Under voltage Overvoltage Input level Output level L H L H L H L H L H L H L H L H 1 H L L H H L L L 5) 8) 307 707 308 412A 413A 412B 412B2

409LT

Abstract: 409LT1
Contextual Info: SILICON EPICAP DIODES 409LT1* MV409* . . . designed for general frequency control and tuning applications; providing solid-state reliability in replacem ent of m echanical tuning methods. • High Q with G uaranteed M inim u m Values at VHF Frequencies

diode zener ZL 7

Abstract: BTS432F BTS542D BTS 640S2 S BTS432E 409L1 diode zener ZL 7.5 BTS542 BTS 542D BTS432D2
Contextual Info: PROFET-Description 7. Loss of Vbb with Powered Inductive Load Disconnecting a monolithic PROFET from the supply voltage If Vbb is switched off via switch S e.g. ignition switch, broken wire, Fig. 7.1 whilst an energized inductance is connected to OUT, the free-wheeling current of load ZL will flow through the GND pin of the PROFET.