4096 BIT STATIC RAM Search Results

ac 1501-50

Abstract: DA10 IM7141 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10
Contextual Info: IM 7141M 4 0 9 6 Bit 4 0 9 6 x 1 NMOS Static RAM DßffifPIDIL DESCRIPTION FEATURES The IM7141 is a 4096-bit static Random Access Memory organized 4096 words x 1 bit. The storage cells and decode and control circuitry are com pletely static; no clocks or refresh

2147 RAM

Abstract: D2147 2147 4096 bit static RAM 2147L D2147L 613H D2147-3 A2TE CD2147
Contextual Info: DßfFÜ^lOIL 2147 4096 Bit 4096x1 HMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2147 is a low power, high-speed 4096-bit static RAM organized 4096 words by 1 bit. It is an advanced version o f the industry standard 2147, fabricated using In­

J18A

Abstract: NMC2147H NMC2147HJ-1 NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L NMC214
Contextual Info: NMC2147H yg\ National éüàSemiconductor NMC2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

NMC2147

Abstract: NMC2147H-2
Contextual Info: NMC2147H O T National ÆÂ Semiconductor NMC2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

NMC2147HJ-1

Abstract: J18A NMC2147H NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L
Contextual Info: NMC2147H W A National dOA Semiconductor NM C2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. AN internal circuits are fully static and therefore re­

Contextual Info: NMC2147H National SSA Semiconductor NMC2147H 4096 x 1-Bit Static RAM G eneral D e scription Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

UPD2147

Abstract: 2147 memory ic
Contextual Info: NEC |xPD2147A 4 ,0 9 6 x 1 -BIT STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The [J.PD2147A is a 4096-bit static Random Access Memory organized as 4096 words by 1 bit, using a scaled MOS tech­ nology. It uses a uniquely innovative design approach which

zilog 6104

Abstract: Z6104-3 Z6104-4 Z6104-1 8891 Z6104-5 Z6104-2 Z6104 Z6104CS A96C
Contextual Info: Single Copy Z6104 Hand,e w¡t Product Specification 4096 x 1 Bit Static RAM JANUARY 1978 Preliminary Description Features ' • 4096 X 1 organization ■ Static data storage circuitry no refresh required ■ Single phase chip enable clock generator circuitry

ge c147

Abstract: CY7C147-35KMB
Contextual Info: _ CY7C147 SEMICONDUCTOR 4096 x 1 Static RAM F eatures F unctional D escription • Automatic power-down when dese­ lected The CY7C147 is a high-performance CMOS static RAMs organized as 4096 words by 1 bit. Easy memory expansion is

Contextual Info: ss~ ü £ f~ _ CY7C147 SEMICONDUCTOR 4096 x 1 Static RAM Features Functional Description • A utom atic power-down when dese­ lected T he CY7C147 is a high-performance CMOS static RAMs organized as 4096 words by 1 bit. Easy memory expansion is

lh5114l

Abstract: SHARP EL
Contextual Info: SHARP EL E K / MELEC O IV 1SE 0 | 31507^0 O O O Q Ì'n s | C M O S 4096-Bit Static Random Access Memory LH5114L T -4 6 -2 3 -ÌZ LH5114L CMOS 4096-Bit Static Random Access Memory Pin Connections Description The L H 5114L is a static RAM organized as 1 ,0 2 4 X 4 bit by using silicon-gata CMOS process

NMC5257A

Abstract: nmc2141
Contextual Info: NMC2141, NMC5257A NMOSRAMs National Semiconductor Pr e v ie w NMC2141, NMC5257A 4096-Bit 4096 x 1 Static RAMs General Description Features These 4096-word by 1-bit sta tic random access memories are fabricated using N-channel silicon-gate technology. AH internal c ircu its are fully sta tic and therefore require

zilog 6104

Abstract: Z6104-1 Z6104-4
Contextual Info: Single Copy Z6104 Handle Wit Product Specification 4096 x 1 Bit Static RAM JANUARY 1978 Zilog Features Description • 4096 X 1 organization ■ Static data storage circuitry no refresh required ■ Single phase chip enable clock generator circuitry ■ Separate data in and data output pins

MA5104

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,

A10176

Abstract: MA5104 DS3580-3
Contextual Info: APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,

im6654

Abstract: 6654
Contextual Info: 4096-Bit CMOS UV EPROM GENERAL DESCRIPTION FEATURES The Intersil IM6653 and IM6654 are fully decoded 4096 bit CMOS electrically programmable ROMs EPROMs fabricated with Intersil's advanced CMOS processing tech­ nology. In all static states these devices exhibit the micro­

Contextual Info: •> GOULD AM I Semiconductors Preliminary Data Sheet S6514 4096 BIT 1024x4 STATIC CMOS RAM Sep te m be r 1984 Features General Description □ □ □ □ □ □ □ □ The S 6 5 1 4 is a 4096 bit static C M O S R A M organized a s 1024 w o rd s by 4 bits per word. The device offers low

CY2147-45PC

Abstract: CY2147 CY2147-55PC CY2147-35PC 202S CY7C147 CY2147-35DC
Contextual Info: W 4096 x 1 Static R/W RAM SEMICONDUCTOR Features Functional Description • Automatic power-down when dese­ lected • CMOS for optimum speed/power • H ighspeed — 35 ns T he CY2147 is a high-perform ance CM O S static R A M organized as 4096 by 1 bit. Easy

ram 4044

Abstract: EMM Semi 4044 4044 RAM memory 4044 DC 4044 4044-UCA 4044-UCB L4044 L4044-UCA
Contextual Info: PRELIMINARY SPECIFICATION E m 4044 m S E M 4K STATIC N-MOS RAM 4096 x 1, 450 ns, TTL In/Out I FEATURES • • • • • • • • • GENERAL DESCRIPTION SEMI’s 4044 RAMs are fu lly STATIC 4096 word X 1 bit N-MOS Random Access Memories— requiring no

Contextual Info: PRELIMINARY SPECIFICATION E m 4044 m s e m i FEATURES • • • • • • • • • 4K STATIC N-MOS RAM 4096 x 1, 450 ns, TTL In/Out 4096 words X 1 bit RAM High speed 450 ns ACCESS and CYCLE time Fully STATIC memory—no clock or refresh required Single +5V power supply

ROJ-20

Contextual Info: PRELIMINARY HY61C68 HYUNDAI SEMICONDUCTOR 4096x4-Bit CMOS Static RAM OCTOBER 1986 DESCRIPTION The HY61C68 is a high speed, low power, 4096-word by 4-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high reliability process coupled with innovative circuit

MCM62963A

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62963A Product Preview 4K x 10 Bit Synchronous Static RAM with Output Registers The MCM62963A is a 40,960 bit synchronous static random access memory organized as 4096 words of 10 bits, fabricated using Motorola's second-generation high-performance

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62975A Product Preview 4K x 12 Bit Synchronous Static RAM with Transparent Outputs and Output Enable The MCM62975A is a 49,162 bit synchronous static random access memory organized as 4096 words of 12 bits, fabricated using Motorola's second-generation high-performance