4096 BIT STATIC RAM Search Results

ac 1501-50

Abstract: DA10 IM7141 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10
Contextual Info: IM 7141M 4 0 9 6 Bit 4 0 9 6 x 1 NMOS Static RAM DßffifPIDIL DESCRIPTION FEATURES The IM7141 is a 4096-bit static Random Access Memory organized 4096 words x 1 bit. The storage cells and decode and control circuitry are com pletely static; no clocks or refresh

2147 RAM

Abstract: D2147 2147 4096 bit static RAM 2147L D2147L 613H D2147-3 A2TE CD2147
Contextual Info: DßfFÜ^lOIL 2147 4096 Bit 4096x1 HMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2147 is a low power, high-speed 4096-bit static RAM organized 4096 words by 1 bit. It is an advanced version o f the industry standard 2147, fabricated using In­

NMC2147HJ-1

Abstract: J18A NMC2147H NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L
Contextual Info: NMC2147H W A National dOA Semiconductor NM C2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. AN internal circuits are fully static and therefore re­

ram 4044

Abstract: EMM Semi 4044 4044 RAM memory 4044 DC 4044 4044-UCA 4044-UCB L4044 L4044-UCA
Contextual Info: PRELIMINARY SPECIFICATION E m 4044 m S E M 4K STATIC N-MOS RAM 4096 x 1, 450 ns, TTL In/Out I FEATURES • • • • • • • • • GENERAL DESCRIPTION SEMI’s 4044 RAMs are fu lly STATIC 4096 word X 1 bit N-MOS Random Access Memories— requiring no

ROJ-20

Contextual Info: PRELIMINARY HY61C68 HYUNDAI SEMICONDUCTOR 4096x4-Bit CMOS Static RAM OCTOBER 1986 DESCRIPTION The HY61C68 is a high speed, low power, 4096-word by 4-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high reliability process coupled with innovative circuit

MCM62963A

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62963A Product Preview 4K x 10 Bit Synchronous Static RAM with Output Registers The MCM62963A is a 40,960 bit synchronous static random access memory organized as 4096 words of 10 bits, fabricated using Motorola's second-generation high-performance

upd2149

Contextual Info: NEC ¿ PD2149 1,024 X 4-Bit STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The //PD2149 is a 4096-bit static Random Access Memory organized as 1024 words by 4 bits. Using a scaled NMOS technology, it incorporates an innovative

2148 static ram

Abstract: 2148 ram ram 2114 D2148 D2148-3 2148 2114 static ram diagram 2114 pin diagram Scans-00105431 2114 ram
Contextual Info: 2148 4096 Bit 1024 X 4 HMOS S ta tic RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2148 is a high speed 4096 bit static RAM or­ ganized 1024 words by 4 bits. It is a single-layer poly HMOS version of the industry standard 2114, and pin compatible

4096 bit static RAM

Abstract: M2147 MD2147
Contextual Info: M 2147 4 0 9 6 B it 4 0 9 6 x 1 HMOS S ta tic RAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • The Intersil M2147 is a high-speed 4096-bit static RAM organized 4096 words by 1 bit, fabricated with Intersil’s HM OS single-layer poly selective-oxidation process. In­

PCD5114P

Abstract: PCD5114 PCD5114D PCD511 PCD5114T sbb2114 pcd 5114
Contextual Info: DEVELOPMENT DATA PCD5114 This data sheet contains advance in form ation and specifications are subject to change w ith o u t notice. 1024 x 4-BIT STATIC RAM G ENERAL DESCRIPTION The PCD5114 is a low-power, high-speed 4096-bit static CMOS RAM, organized as 1024 words o f

NMC6504-5

Abstract: NMC6504-9 NMC6504N-5 MC6504 J18A N18A NMC6504J-2 NMC6504J-5 NMC6504J-9 NMC6504
Contextual Info: NMC6504 4096-Bit 4096 x 1 Static RAM General Description Features The NMC6504 is a s ta tic CMOS random access read/w rite m em ory organized as 4096 w ords o f 1 b it each. T h is device is fa b ric a te d w ith N a tio n a l S em ic o n d u c to r’s silicon-gate

M5T4044P-20

Abstract: 4044p bit static RAM RAM 4044 4044p S-20 S-30 TMS4044 4096-WCJRD 70TD
Contextual Info: MITSUBISHI LSIs M5T4044P-20, S-20; P-30, S-30; P-45, S-45 4096-B IT 4 0 9 6 -WORD BY 1-BIT STATIC RAM DESCRIPTION This is a fa m ily o f 4096-word by 1-b it static RAMs, fa b ri­ cated w ith the N-channel silicon-gate MOS process and designed fo r simple interfacing. They operate w ith a single

m2141

Abstract: M2147 MD2147-3 MD2147 MF2147 MF2147-3 m2147-3
Contextual Info: M2147 4096 Bit 4096 x 1 HMOS Static RAM DMÜ^DtL GENERAL DESCRIPTION FEATURES • • • • • • • • • • High speed-70ns maximum access time ( - 3 ) Automatic low-power standby-30mA maximum Full military temperature range-55°C to +125 C Full 883B Class B processing available

MD2148

Abstract: M2148 MD2148-3 MF2148 F2148-3
Contextual Info: M2148 DOfinÜ^DIL 4096 Bit 1024 X 4 HMOS Static RAM FEATURES • High speed-70ns maximum access time ( - 3 ) • Automatic low-power standby-165mW maximum • Completely static-no clock required • Single +5V supply • TTL compatible inputs and outputs

2114L

Abstract: MV21SC14 MV21SC14-1 MV21SC14-2 MV21SC14-3
Contextual Info: # 8 ü i l S S S ^ 2 , 0 CMOS çt/. 003698 ? - V MV21SC14 1024 x 4 BIT STATIC RAM T he MV21SC14 is a h ig h speed, lo w pow e r 4096-bit Static R andom Access M em ory, organised as1024 w ord s b y 4-bits and fabricated w ith th e IS O -C M O S process. It is a fu lly static

Contextual Info: ISS 3 4K X 4-BIT CACHE-TAG CMOS STATIC RAM OCTOBER 1990 FEATURES DESCRIPTION • Very High Speed -1 2 ,1 5 , 20ns Max. • Fast output enable (tOE) for cache applications • CMOS Low Power Operation The ISSI IS61C180 is a high-speed, low power 4096 words by 4 bit static RAM. It is fabricated using ISSI's high

S2114

Abstract: S211 2114L 2114 static ram RAM 2114 vmos S2114-1 S2114-2 S2114-3 S2114A-1
Contextual Info: AMI S 2114 40 96 BIT 1024x4 STATIC V M O S RAM Features G eneral D escription □ High Speed Operation: Access Time: 150ns Maximum (-1 ) The AMI S2114 is a 4096 bit fully static RAM organ­ ized as 1024 words by 4 bits. The device is fully TTL compatible on all inputs and outputs and has a single

Contextual Info: SM 64C16, SM J64C16 4096 WORD BY 4-BIT STATIC RAMS MARCH 1 98 7 —REVISED NOVEMBER 1987 Common I/O JO PACKAGE TOP VIEW • Military Temperature Range . . . - 5 5 ° C to 125°C (M Suffix) • Fast Static Operation • Battery Back-Up Operation . . . 2-Volt Data

NMC2142AJ

Abstract: NMC2142AN NMC2142APJ NMC2142APN MC2142
Contextual Info: NMC2142A, NMC2142AP National Semiconductor NMOSRAMs PREVIEW NMC2142A, NMC2142AP 4096-Bit 1024 x 4 Static RAMs General Description Features Thesfe1_024-word by ib ijf& tatic random a cc e ss memories are fabricated using N-channel s ilicon-gatejechnology.

Contextual Info: FU JITSU CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY M B 8K 69A -25 MB81C69A-30 MB81C69A-35 J a n u a ry 1 9 8 8 E d itio n 2 .0 4 K x 4 16,384-BIT STATIC RANDOM ACCESS MEMORY WITH SUPPER HIGH SPEED The Fujitsu MB 81C 69A is 4096 words x 4 bits static random access m em ory

Contextual Info: intei 51C68 HIGH SPEED CHMOS 4096 x 4-BIT STATIC RAM 51C68-30 51C68-35 51C68-35L Max. Access Time ns 30 35 35 Max. Active Current (mA) 90 90 65 Max. Standby Current (mA) 10 10 5 Double Metal CHMOS III Technology High Density 20-Pin Package Completely Static Memory-No Clock

100A484

Contextual Info: HIGH-SPEED BiCMOS ECL STATIC RAM 16K 4Kx 4-BIT SRAM FEATURES: • 4096-words x 4-bit organization • Address access time: 4/4.5/5/7/8/10/15 ns • Low power dissipation: 900mW (typ.) • Guaranteed Output Hold time • Fully compatible with ECL logic levels

Contextual Info: ISSI IS 61C70 4K X 4 HIGH SPEED CMOS STATIC RAM FEATURES DESCRIPTION • • The ISSI IS61C70 is a high speed, low power, 4096- word by 4- bit CMOS static RAM. It is fabricated using ISSI's high performance CMOS double metal technology. This highly reliable process coupled with innovative circuit design tech­

INTEL 3226

Abstract: 1666B
Contextual Info: 34E D MACRONIX INC MX2332/33 St=00005 □QQDlt.3 L, p r e l im in a r y 4 0 9 6 X Ö STATIC READ ONLY MEMORY FEATURES DESCRIPTION . 4096 X 8-bit organization . Single +5V supply . Access time - 300 ns [max] . Totally static operation . Complete TTL compatible