4096 BIT STATIC RAM Search Results

ac 1501-50

Abstract: DA10 IM7141 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10
Contextual Info: IM 7141M 4 0 9 6 Bit 4 0 9 6 x 1 NMOS Static RAM DßffifPIDIL DESCRIPTION FEATURES The IM7141 is a 4096-bit static Random Access Memory organized 4096 words x 1 bit. The storage cells and decode and control circuitry are com pletely static; no clocks or refresh

2147 RAM

Abstract: D2147 2147 4096 bit static RAM 2147L D2147L 613H D2147-3 A2TE CD2147
Contextual Info: DßfFÜ^lOIL 2147 4096 Bit 4096x1 HMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2147 is a low power, high-speed 4096-bit static RAM organized 4096 words by 1 bit. It is an advanced version o f the industry standard 2147, fabricated using In­

J18A

Abstract: NMC2147H NMC2147HJ-1 NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L NMC214
Contextual Info: NMC2147H yg\ National éüàSemiconductor NMC2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

NMC2147

Abstract: NMC2147H-2
Contextual Info: NMC2147H O T National ÆÂ Semiconductor NMC2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

NMC2147HJ-1

Abstract: J18A NMC2147H NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L
Contextual Info: NMC2147H W A National dOA Semiconductor NM C2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. AN internal circuits are fully static and therefore re­

Contextual Info: NMC2147H National SSA Semiconductor NMC2147H 4096 x 1-Bit Static RAM G eneral D e scription Features The NMC2147H is a 4096-word by 1-bit static random ac­ cess memory fabricated using N-channel silicon-gate tech­ nology. All internal circuits are fully static and therefore re­

UPD2147

Abstract: 2147 memory ic
Contextual Info: NEC |xPD2147A 4 ,0 9 6 x 1 -BIT STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The [J.PD2147A is a 4096-bit static Random Access Memory organized as 4096 words by 1 bit, using a scaled MOS tech­ nology. It uses a uniquely innovative design approach which

zilog 6104

Abstract: Z6104-3 Z6104-4 Z6104-1 8891 Z6104-5 Z6104-2 Z6104 Z6104CS A96C
Contextual Info: Single Copy Z6104 Hand,e w¡t Product Specification 4096 x 1 Bit Static RAM JANUARY 1978 Preliminary Description Features ' • 4096 X 1 organization ■ Static data storage circuitry no refresh required ■ Single phase chip enable clock generator circuitry

ge c147

Abstract: CY7C147-35KMB
Contextual Info: _ CY7C147 SEMICONDUCTOR 4096 x 1 Static RAM F eatures F unctional D escription • Automatic power-down when dese­ lected The CY7C147 is a high-performance CMOS static RAMs organized as 4096 words by 1 bit. Easy memory expansion is

MA5104

Contextual Info: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,

im6654

Abstract: 6654
Contextual Info: 4096-Bit CMOS UV EPROM GENERAL DESCRIPTION FEATURES The Intersil IM6653 and IM6654 are fully decoded 4096 bit CMOS electrically programmable ROMs EPROMs fabricated with Intersil's advanced CMOS processing tech­ nology. In all static states these devices exhibit the micro­

CY2147-45PC

Abstract: CY2147 CY2147-55PC CY2147-35PC 202S CY7C147 CY2147-35DC
Contextual Info: W 4096 x 1 Static R/W RAM SEMICONDUCTOR Features Functional Description • Automatic power-down when dese­ lected • CMOS for optimum speed/power • H ighspeed — 35 ns T he CY2147 is a high-perform ance CM O S static R A M organized as 4096 by 1 bit. Easy

ram 4044

Abstract: EMM Semi 4044 4044 RAM memory 4044 DC 4044 4044-UCA 4044-UCB L4044 L4044-UCA
Contextual Info: PRELIMINARY SPECIFICATION E m 4044 m S E M 4K STATIC N-MOS RAM 4096 x 1, 450 ns, TTL In/Out I FEATURES • • • • • • • • • GENERAL DESCRIPTION SEMI’s 4044 RAMs are fu lly STATIC 4096 word X 1 bit N-MOS Random Access Memories— requiring no

ROJ-20

Contextual Info: PRELIMINARY HY61C68 HYUNDAI SEMICONDUCTOR 4096x4-Bit CMOS Static RAM OCTOBER 1986 DESCRIPTION The HY61C68 is a high speed, low power, 4096-word by 4-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high reliability process coupled with innovative circuit

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62975A Product Preview 4K x 12 Bit Synchronous Static RAM with Transparent Outputs and Output Enable The MCM62975A is a 49,162 bit synchronous static random access memory organized as 4096 words of 12 bits, fabricated using Motorola's second-generation high-performance

upd2149

Contextual Info: NEC ¿ PD2149 1,024 X 4-Bit STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The //PD2149 is a 4096-bit static Random Access Memory organized as 1024 words by 4 bits. Using a scaled NMOS technology, it incorporates an innovative

Contextual Info: CMOS 16384-BIT STATIC RANDOM ACCESS MEMORY FU JITSU MB81C69A-25 MB81C69A-30 MB81C69A-35 January 1988 Edition 2.0 4K x 4 16,384-BIT STATIC RANDOM ACCESS MEMORY WITH SUPPER HIGH SPEED The Fujitsu MB 81C 69A is 4096 words x 4 bits static random access m em ory

5204 eprom

Abstract: mm5204 MM5204Q MM5204D D24C MM4204D IMP-16 IMP-16P
Contextual Info: MM4204/MM5204 4096-Bit 512 x 8 UV Erasable PROM MM4204/M M5204 MOS EPROMs 2 2 National Semiconductor General Description Static operation-^no clock required The MM4204/MM5204 is a^4Q96-bit static read only memory which is electrically programmable and uses

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6268 MCM6269 4K x 4 Bit Static Random Access Memory The MCM6268 and MCM6269 are 16,384 bit static random access memories organized as 4096 words ot 4 bits, fabricated using Motorola’s high-performance siiicon-gate CMOS technology. Static design eliminates the need for external clocks or

UPD2114

Abstract: mpd2114 MPD2114LC PD42S18160 2114L-3 2114L 2114l-2 4218160 MPD2114L pd2114
Contextual Info: /¿PD2114L NEC Electronics U.S.A. Inc. Ïpd21 î 4L-2 jlPD2114L-3/ MPD2114L-5/ Microcomputer Division 4096 BIT 1024 x 4 BITS STATIC RAM D E S C R IP T IO N The NEC MPD2114L is a 4096 b it static Random Access M em ory organized as 1024 words by 4 bits using N-channel Silicon-gate MOS technology. It uses fu lly DC stable

2148 static ram

Abstract: 2148 ram ram 2114 D2148 D2148-3 2148 2114 static ram diagram 2114 pin diagram Scans-00105431 2114 ram
Contextual Info: 2148 4096 Bit 1024 X 4 HMOS S ta tic RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2148 is a high speed 4096 bit static RAM or­ ganized 1024 words by 4 bits. It is a single-layer poly HMOS version of the industry standard 2114, and pin compatible

MCM6270

Abstract: MCM6270J25
Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M CM 6270 4K x 4 Bit Static RAM The MCM6270 is a 16,384-bit static random access memory organized as 4096 words of 4 bits, fabricated using Motorola's high-performance silicon-gate CMOS technology. Static design eliminates the need fo r external clocks or tim ing strobes, while CMOS cir­

nec 444 ram

Abstract: PD2114L PD444C MPD444C 2SO 765 PD42S18160 uPD444-3 pd2114 MPD444 nec chic
Contextual Info: fiPD444 /¿PD444-1 /iPD444-2 /iPD444-3 ^ NEC NEC Electronics U.S.A. Inc. Microcomputer Division 1024 x 4-BIT STATIC CMOS RAM D ESCR IPTIO N The /LfPD444 is a high-speed, low power silicon gate CMOS 4096 bit static RAM orga­ nized 1024 words by 4 bits. It uses DC stable static circuitry throughout and there­

MCM6270J35

Abstract: MCM6270J25 MCM6270P
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6270 Advance Information 4K x 4 Bit Static RAM The MCM6270 is a 16,384-bit static random access memory organized as 4096 words of 4 bits, fabricated using M otorola's high-performance silicon-gate CMOS technology. Static design eliminates the need fo r external clocks or tim ing strobes, while CMOS cir­