DIODE T25 4 do
Abstract: bb409 DIODE T25 4 DIODE T25 DIODE 409 Q62702-B112 IR 409 H DIODE T25 4 C
Contextual Info: SIEMENS Silicon Variable Capacitance Diode BB 409 • For VHF tuners • Not for new design Type Marking Ordering Code Pin Configuration Package1 BB 409 green Q62702-B112 DO-35 DHD o - ^ -o EHA07001 Maximum Ratings Parameter Symbol
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q62702-b112eha07001do-35az35b05+90235bos535b05diode t25 4 dobb409diode t25 4diode t25diode 409ir 409 hdiode t25 4 c
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ul508a
Abstract: SCCR-TD001A-EN-P SCCR-SP001A-EN-P 140M-C2E-A16 1492-TD013A-EN-P CCLP-TD001A-EN-P UL508A-2001 65kA 65kA terminal blocks nec marking BOOK
Contextual Info: Short Circuit Current Ratings TECHNICAL DATA UNDERSTANDING NEC ARTICLE 409 AND UL 508A, SUPPLEMENT SB SHORT CIRCUIT CURRENT RATINGS Short Circuit Current Rating Technical Data National Electric Code Changes Overview National Electrical Code Introduces Article 409 for Industrial Control Panels
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sccr-sp001a-en-p1492-td013a-en-pcclp-td001a-en-psccr-td001a-en-p+6ul508a140m-c2e-a16ul508a-200165ka65ka terminal blocksnec marking book
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E59272
Abstract: UL508c sccr UL508A-2001 nec 4308 ul508a component glossery disc type energy meter construction MARKING KA
Contextual Info: SHORT CIRCUIT CURRENT RATINGS VTAC 9 AC Drive NATIONAL ELECTRIC CODE INTRODUCES ARTICLE 409 FOR INDUSTRIAL CONTROL PANELS: In 2005, the national Electric Code NEC introduced Article 409 for Industrial Control Panels requiring that panel builders and original equipment manufacturers (OEM) analyze and mark their panels with short circuit current
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9vt-td002a-en-pe59272ul508c sccrul508a-2001+5nec 4308ul508acomponent glosserydisc type energy meter constructionmarking ka
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1721E50R
Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
Contextual Info: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking
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lae4001rlae4002slbe2003slbe2009s+14lce2009slee1015tlte21009rlte21015rlte21025rlte42005s1721e50rmarking codesphilips marking code2327e40rmarking codes transistorstransistor 502r8 markingmarking code philips
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X2 MKP SH
Abstract: mkt gpf k 40/085/21 capacitor x2 mkp 40/100/21 MKP X2 GPF gpf CAPACITOR gpf k x2 MKP x2 SH 275 capacitor x2 GMF 40/100/21 X2 MKP gmf capacitor x2 GMF 40/085/21
Contextual Info: A KYOCERA GROUP COMPANY TPC Suppressor Capacitors Classes X & Y Contents General Technical Information on Interference Suppression . . . . . 2 Ordering Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 QX Series Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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s-sccxy10m698-nx2 mkp shmkt gpf k 40/085/21capacitor x2 mkp 40/100/21+7mkp x2 gpfgpf capacitorgpf k x2mkp x2 sh 275capacitor x2 gmf 40/100/21x2 mkp gmfcapacitor x2 gmf 40/085/21
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capacitor x2 GMF 40/085/21
Abstract: X2 MKP gmf MKP X2 GPF QX X2 GMF mkp gpf MKP x2 SH 275 capacitor 470 uF elco IEC 384-14 II 40 100 21 EN132400 IEC 384-14 II
Contextual Info: A KYOCERA GROUP COMPANY TPC Suppressor Capacitors Classes X & Y Contents General Technical Information on Interference Suppression . . . . . 2 Ordering Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 QX Series Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
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s-sccxy7m599-rcapacitor x2 gmf 40/085/21x2 mkp gmfmkp x2 gpf+7qx x2 gmfmkp gpfmkp x2 sh 275capacitor 470 uf elcoiec 384-14 ii 40 100 21en132400iec 384-14 ii
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IR 409 K
Abstract: SFH 409 SFH 487 Q62702-P1001 Q62702-P1002 Q62702-P860 DIODE 409
Contextual Info: SFH 409 SFH 409 fex06250 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● GaAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren ● Hohe Zuverlässigkeit
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fex06250ir 409 ksfh 409 sfh 487q62702-p1001+3q62702-p1002q62702-p860diode 409
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TYP 513 309
Abstract: Q62702-P1001 Q62702-P1002 Q62702-P860 SFH409 IR 409 K
Contextual Info: SFH 409 SFH 409 fex06250 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● GaAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren ● Hohe Zuverlässigkeit
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fex06250typ 513 309q62702-p1001q62702-p1002+3q62702-p860sfh409ir 409 k
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Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Hohe Impulsbelastbarkeit • Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 309, SFH 487
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SFH 409 SFH 487
Abstract: OPTOKOPPLER p1002 sensor Q62702-P1002 Q62702-P860 GEX06250 SFH409
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Wesentliche Merkmale Features • • • • GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 309, SFH 487
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ohr01887gex06250sfh 409 sfh 487optokoppler+4p1002 sensorq62702-p1002q62702-p860sfh409
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Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat Chip position -Cathode SFH 409 Anode (SFH 487, SFH 4391) O in C\J (O o X 0) G EX06250 M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherwise specified. Wesentliche Merkmale
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GEX06250
Abstract: Q62702-P1001 Q62702-P1002 Q62702-P860
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Hohe Impulsbelastbarkeit • Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 309, SFH 487
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ohr01887gex06250q62702-p1001q62702-p1002+1q62702-p860
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ls 487
Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat 4.0 3.6 0iffei 5 2 9 - ^ 6.3 27 5.9 ^ C a th o d e S F H 409 Anode (SFH 487) — (3.5) Chip position . _0.6 ,.v^ V 0.4 GEX06250 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Contextual Info: Opto Semiconductors GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat 3.5 29 27 4.0 3.6 ø3.1 ø2.9 0.7 0.4 0.8 0.4 2.54 mm spacing 1.8 1.2 4.1 3.9 6.3 5.9 0.6 0.4 Chip position Cathode (SFH 409) Anode (SFH 487, SFH 4391) fex06250 5.2
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409 marking
Abstract: osram sfh 309
Contextual Info: 2011-03-14 GaAs Infrared Emitter GaAs-IR-Lumineszenzdiode Version 1.0 SFH 409 Features: • • • • • Besondere Merkmale: Very highly efficient GaAs-LED High reliability High pulse handling capability Good spectral match to silicon photodetectors Same package as SFH 309, SFH 487
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d-93055409 markingosram sfh 309 |
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GEX06250
Abstract: OHLY0598 SFH 409 SFH 487
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 409 Wesentliche Merkmale Features • • • • GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger
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GEX06250
Abstract: OHLY0598 409 marking
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 409 Wesentliche Merkmale Features • • • • GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger
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osram sfh 309
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 409 Wesentliche Merkmale Features • • • • GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger
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GEXY6250
Abstract: Q62702-P1002 Q62702-P860
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Wesentliche Merkmale Features • • • • GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 309, SFH 487
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gexy6250q62702-p1002q62702-p860 |
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GEX06250
Abstract: OHLY0598
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead Pb Free Product - RoHS Compliant SFH 409 Wesentliche Merkmale Features • • • • GaAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger
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Contextual Info: SIEMENS BB 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in V H F TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB619C yellow S 1 =C SOD-123 Q62702-B683 2 =A Maximum Ratings Parameter Symbol Values
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bb619cod-123q62702-b683fl235hos+3j2/cj25/ct28023sfc
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F 407 Diode
Abstract: N 407 Diode Siemens rs 407 diode marking 2b DIODE T25
Contextual Info: SIEMENS B B 619C Silicon Variable Capacitance Diode • For tuning of extended frequency band in V H F TV/ VTR tuners Type Marking Ordering Code Pin Configuration Package BB619C yellow S 1 =C S O D -123 Q62702-B683 2 =A Maximum Ratings Parameter Symbol Values
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bb619cq62702-b683f 407 dioden 407 diode+3siemens rs 407diode marking 2bdiode t25
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marking code 68W
Contextual Info: SIEMENS BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W CI/A2 A t/M FL _0_ U BAT68-06W C1/C2 HT • n HT U ET Type Marking Ordering Code Pin Configuration BAT 68-04W
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8-04wbat68-05wbat68-06wq62702-+4ot-3238-05w8-06wmarking code 68w
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Ablebond 8390
Abstract: ESDA6V2HPRL CLP190ERL LM358DT ESDA6V2HP CLP190 LM324DT M74HC14RM13TR LM2904DT 16 g700
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN DSG/03/380 DSG-DISCRETES & STANDARD IC s- LEADFREE PLATING FOR SOP, TSSOP, SSOP, QSOP PACKAGES. 2003/11/28 PCN DSG/03/380 Product Family /Commercial Product All products in SOP, TSSOP, SSOP, QSOP PACKAGES. Type Of Change
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dsg/03/38024-feb-200428-nov-2003ablebond 8390+9esda6v2hprlclp190erllm358dtesda6v2hpclp190lm324dtm74hc14rm13trlm2904dt16 g700
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