404 SOT Search Results

IR615

Abstract: SS0225CS3
Contextual Info: PRELIMINARY SS0225CS3 SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 2 AMP 25 VOLTS CENTERTAP SUPER SCHOTTKY RECTIFIER Designer's Data Sheet FEATURES: Optimized for 2.1V and 3.3V output power supplies. The SUPER

Contextual Info: 5RO/223 thru 15RO/223 PRELIMINARY SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: 562 404-4474 * Fax: (562) 404-1773 Designer's Data Sheet FEATURES: Optimized for 12V and 15V auxiliary output power supplies. The EPION series has been designed to provide low forward voltage

Contextual Info: LM4040/4041 LM4040/404 Precision Micropower Shunt Voltage Reference General Description Features Ideal for space critical applications, the LM4040 and LM4041 precision voltage references are available in the subminia­ ture 3mm x 1,3mm SOT-23 surface-mount package.

PHP18NQ10T

Abstract: PHB27NQ10T BYC05B-600 PHB23NQ10T pbyr1045 BYV72EW200 Msd119 BYC08B-600 byv26 equivalent bridge rectifier 8341
Contextual Info: Philips Semiconductors Power in Switched Mode Power Supplies SOT 428 DPAK SOT 404 SOT 223 SOT 429 D 2-PAK 1999 TO247 M3D306 TO220AB SOD 59 TO220AC SOT 186A SOD 113 ISOLATED TO22OAB 2-PIN SOT 186A Philips Semiconductors Ð a worldwide company Argentina: see South America

transistor 667

Contextual Info: ^^53^31 0035133 404 APX Philips S em iconductors Product specification N AHER PHILIPS/DISCRETE NPN 6 GHz wideband transistor FEATURES • L7E 1 e BFR93A PINNING PIN High power gain DESCRIPTION • Low noise figure • Very low intermodulation distortion 2

Contextual Info: bbSa^El ODETBbM 404 « A P X Philips Semiconductors Product specification HF/VHF power MOS transistor — BLF175 N AMER PHILIPS/DISCRETE FEATURES b'JE D PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability

sot 37

Abstract: BF970 SOT-37 DDB7712 GDE7711 Self-Oscillating mixer BF-970
Contextual Info: N AUER PHILIPS/DISCRETE b'îE 1> bbSa'lBl GDE7711 404 BF970 SILICON PLANAR EPITAXIAL T RANSISTO R P-N-P transistor in a plastic T-package intended for application as self-oscillating mixer stage in u.h.f. tuners. Q U IC K R E F E R E N C E D A T A Collector-base voltage open emitter

Contextual Info: 13 12 If 11 B Χ .2 0 / Î? 0 0 î 7 e . r . n . 6 4 9 3 Z PART NO. CKT S IZ E D IM .'A ' D IM ." B " D IM ." C " 90787 -0009 90787 -0012 a 12 (7 .5 0 1 /.2 9 5 < 12.501/.492 < 13.40)/.527 < 18.40)/.724 < 10.25)/.404 DIM . < 15.25)/.600 0 (L Q p tftÆ )

Contextual Info: LED Lamps D • SHARP CORP fliaOTTB 000705*1 404 GL9DD41 Series ISRPJ GL9DD41 Series Rectangle Type LED Lamps T - H I- Z 3 I Model No. GL9PR41 GL9HY41 Red Yellow Outline Dimensions U nit: m m GaP GaAsP/GaP I Features 1 . 1 .9 m m x 1 .9 m m x 2 p c s r e c ta n g le ty p e

MMBT404A

Contextual Info: ]>F|b3b7E54 MO TO RO LA SC ÍXSTRS/R F> 6367254 M OT O RO L A SC XSTRS/R □ D flEO E? fi 96D 8 2 0 2 7 . F D t M A XIM U M RATINGS *- 37~ 2 3 Value Sym bol 404 404A Unit Collector-Emitter Voltage VCEO 24 35 Vdc Collector-Base Voltage v CBO 25 40 Vdc Emitter-Base Voltage

63E17

Abstract: power thyristors
Contextual Info: MECHANICAL DATA Page SO D 27 550 SO T54 551 SO T 5 4 A 552 S O T 5 4 variant 553 SO T78 554 SO T82 555 S O T 186 A 556 S O T 223 557 S O T 404 558 SO T 428 559 Philips Semiconductors Power Thyristors and Triacs Mechanical Data Notes 1. For further information refer to mounting instructions for axial-leaded devices.

heat sink design guide, IGBT

Abstract: EVIC420A RF MOSFETs evic TO-264 heat sink to220 ixys to-247 DEIC DE275 igbt to247
Contextual Info: Gate Drive Evaluation Boards MOSFET/IGBT Gate Drive Modules/Gate Drive 1C Evaluation Boards The EV-Series MOSFET Gate Drive Modules are general purpose gate drive circuits designed to drive the DE-Series RF POWER MOSFETs, as well as industry-standard MOSFETs

zvn4206

Abstract: zvn4206 application FAST DMOS FET Switches n-CHANNEL ZVN4206G DSA003784
Contextual Info: SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVN4206G ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. Drain-Source Breakdown Voltage BV DSS 60 Gate-Source Threshold Voltage VGS(th) 1.3 Gate-Body Leakage MAX.

IC 6650

Abstract: 1N751 LT1460 LT1461 LT1790 LT6650 LT6650CS5 LT6650HS5 LT6650IS5 MO-193
Contextual Info: LT6650 Micropower, 400mV Reference with Rail-to-Rail Buffer Amplifier in SOT-23 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Quiescent Current 5.6µA typical Wide Supply Range: 1.4V to 18V 400mV Reference ±1% Maximum Accuracy Over Temperature at 5V

6650

Contextual Info: LT6650 Micropower, 400mV Reference with Rail-to-Rail Buffer Amplifier in SOT-23 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Quiescent Current 5.6µA typical Wide Supply Range: 1.4V to 18V 400mV Reference ±1% Maximum Accuracy Over Temperature at 5V

IC 6650

Abstract: 6650 SOT23 LT6650CS5 MARKING 1N751 LT1460 LT1461 LT1790 LT6650 LT6650CS5 LT6650HS5
Contextual Info: LT6650 Micropower, 400mV Reference with Rail-to-Rail Buffer Amplifier in SOT-23 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Quiescent Current 5.6µA typical Wide Supply Range: 1.4V to 18V 400mV Reference ±1% Maximum Accuracy Over Temperature at 5V

PCA8563

Abstract: AT8565S AnalogTek PCF8563 10H32 DIP-88 AT856 AT8565 STA 404 A I C B5B0
Contextual Info: AnalogTek 武汉芯景科技有限公司 AT8565 使用说明书 ——I2C 接口带校准寄存器的实时时钟/日历芯片 文档编号： 发布日期： AT8565DS001V1.0 2009-02-28 二〇〇九年二月 本文档是 AT8565 实时时钟/日历芯片的使用说明书，内容包括

Contextual Info: BD950F; 952F BD954F;956F _ SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.

C78N24

Abstract: C4574 MP-45G MP45G MPC1944 78L08 sot-89 C4082 UPC7815A regulators volt PC2406A
Contextual Info: FULL PRODUCT LINE GUIDE Single Operational Amplifiers Part No. Description Package*0’ Page /iP C 7 4 i General Purpose Operational Amplifier C , G - 8 Pin ;jPC811 J - FE T Input Low - Offset Operational Amplifier C, G - 8 Pm 66 ¿/PC813 J - FET Input Low - Offset Operational Amplifier

bd955

Abstract: BD955F 952F BD949F BD950F BD951F BD953F BD954F
Contextual Info: BD950F;952F SbE D PHILIPS INTERNATIONAL • R D Q fid F - QÇ>RF 711D02ti 0 0 4 3 1 1 b 432 H P H I N SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each in a SOT186 envelope w ith an electrically insulated mounting base. NPN complements are BD949F, BD951F, BD953F and BD955F.

K274

Abstract: D4050
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. Southwest Mem ory products Southwest (Microproducts) 22837 Ventura Blvd. Suite 305 Woodland Hills, CA 91367 (818) 346-6416 FAX: (818) 346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795

DR 6236

Abstract: tl 8819 str 8045 4411B D8024 str28 SF-02631 345B korea cable Neltron
Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES • U.S.A. Southwest Memory products Southwest (Mtcroproducts) 22837 Ventura Blvd. Suits 305 Woodland Hills, C A 91 3 6 7 (818)346-6416 FAX: (818)346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795

str 8045

Contextual Info: SAMSUNG SEMICONDUCTOR SALES OFFICES - U.S.A. Southwest Memory products Southwest (Microproducts) 22837 Ventura Blvd. Suite 305 Woodland Hills, CA 91367 (818)346-6416 FAX: (818)346-6621 2102 Business Center Drive Suite 169 Irvine, CA 92715 (714) 253-5795

Contextual Info: SOT223 N-CHANNEL ENHANCEM ENT M ODE VERTICAL DM OS FET ZVN4206G ISSUE 3 - JANUARY 1996 ✪ FEATURES * Compact geometry * Fast sw itching speeds * No secondary breakdow n and Excellent temperature stability * High input impedance and low current drive * Ease of parralleling